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Class Information
Number: 257/E29.144
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrodes (epo) > Of specified material (epo) > Ohmic electrodes (epo) > On group iii-v material (epo)
Description: This subclass is indented under subclass E29.143. This subclass is substantially the same in scope as ECLA classification H01L29/45B.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.145 On thin-film group iii-v material (epo) 17


Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8525215 Light emitting device, method of manufacturing the same, light emitting device package, and lighting system Sep. 3, 2013
8519504 Electrode for semiconductor chip and semiconductor chip with the electrode Aug. 27, 2013
8431475 Method for fabricating a low-resistivity ohmic contact to a p-type III-V nitride semiconductor material at low temperature Apr. 30, 2013
8207556 Group III nitride semiconductor device and epitaxial substrate Jun. 26, 2012
7993948 Semiconductor device, method for fabricating an electrode, and method for manufacturing a semiconductor device Aug. 9, 2011
7795738 Nitride semiconductor device Sep. 14, 2010
7786511 Semiconductor device with Schottky and ohmic electrodes in contact with a heterojunction Aug. 31, 2010
7719030 Aluminum alloys for low resistance, ohmic contacts to III-nitride or compound semiconductor May. 18, 2010
7692298 III-V nitride semiconductor device comprising a concave shottky contact and an ohmic contact Apr. 6, 2010
7687870 Laterally configured electrooptical devices Mar. 30, 2010
7592641 Semiconductor device, method for fabricating an electrode, and method for manufacturing a semiconductor device Sep. 22, 2009
7554123 Ohmic contact for nitride-based semiconductor device Jun. 30, 2009
7420227 Cu-metalized compound semiconductor device Sep. 2, 2008
7285857 GaN-based III--V group compound semiconductor device and p-type electrode for the same Oct. 23, 2007
7190076 Electrode for p-type Group III nitride compound semiconductor layer and method for producing the same Mar. 13, 2007
7055745 Laser scanning method and system employing visible scanning-zone indicators identifying a three-dimensional omni-directional laser scanning volume for package transport Jun. 6, 2006
7009218 Nitride semiconductor device Mar. 7, 2006
6936487 Semiconductor device with ohmic electrode formed on compound semiconductor having wide band gap and its manufacture method Aug. 30, 2005
6917061 AlGaAs or InGaP low turn-on voltage GaAs-based heterojunction bipolar transistor Jul. 12, 2005
6897137 Process for fabricating ultra-low contact resistances in GaN-based devices May. 24, 2005
6894391 Electrode structure on P-type III group nitride semiconductor layer and formation method thereof May. 17, 2005
6894325 Fabrication of low resistance, non-alloyed, ohmic contacts to InP using non-stoichiometric InP layers May. 17, 2005
6887311 Method of forming ohmic electrode May. 3, 2005
6884704 Ohmic metal contact and channel protection in GaN devices using an encapsulation layer Apr. 26, 2005
6864510 Nitride semiconductor field effect transistor (FET) and method of fabricating the same Mar. 8, 2005
6858522 Electrical contact for compound semiconductor device and method for forming same Feb. 22, 2005
6852615 Ohmic contacts for high electron mobility transistors and a method of making the same Feb. 8, 2005
6830189 METHOD OF AND SYSTEM FOR PRODUCING DIGITAL IMAGES OF OBJECTS WITH SUBTANTIALLY REDUCED SPECKLE-NOISE PATTERNS BY ILLUMINATING SAID OBJECTS WITH SPATIALLY AND/OR TEMPORALLY COHERENT-REDUCED PLA Dec. 14, 2004
6759312 Co-implantation of group VI elements and N for formation of non-alloyed ohmic contacts for n-type semiconductors Jul. 6, 2004
6734468 Devices related to electrode pads for p-type group III nitride compound semiconductors May. 11, 2004
6705526 AUTOMATED METHOD OF AND SYSTEM FOR DIMENSIONING OBJECTS TRANSPORTED THROUGH A WORK ENVIRONMENT USING CONTOUR TRACING, VERTICE DETECTION, CORNER POINT DETECTION, AND CORNER POINT REDUCTION METH Mar. 16, 2004
6693352 Contact structure for group III-V semiconductor devices and method of producing the same Feb. 17, 2004
6683332 Heterojunction bipolar transistor and manufacturing method therefor including electrode alloyed reaction layers Jan. 27, 2004
6661037 Low emitter resistance contacts to GaAs high speed HBT Dec. 9, 2003
6639316 Electrode having substrate and surface electrode components for a semiconductor device Oct. 28, 2003
6629640 Holographic laser scanning method and system employing visible scanning-zone indicators identifying a three-dimensional omni-directional laser scanning volume for package transport navigation Oct. 7, 2003
6610606 Method for manufacturing nitride compound based semiconductor device using an RIE to clean a GaN-based layer Aug. 26, 2003
6583454 Nitride based transistors on semi-insulating silicon carbide substrates Jun. 24, 2003
6583455 Fabrication of low resistance, non-alloyed, OHMIC contacts to INP using non-stoichiometric INP layers Jun. 24, 2003
6577006 III-V nitride based semiconductor light emitting device Jun. 10, 2003
6573599 Electrical contact for compound semiconductor device and method for forming same Jun. 3, 2003
6570194 Compound semiconductor field effect transistor with improved ohmic contact layer structure and method of forming the same May. 27, 2003
6555457 Method of forming a laser circuit having low penetration ohmic contact providing impurity gettering and the resultant laser circuit Apr. 29, 2003
6531715 Multilayer contact electrode for compound semiconductors and production method thereof Mar. 11, 2003
6521998 Electrode structure for nitride III-V compound semiconductor devices Feb. 18, 2003
6486502 Nitride based transistors on semi-insulating silicon carbide substrates Nov. 26, 2002
6452244 Film-like composite structure and method of manufacture thereof Sep. 17, 2002
6429111 Methods for fabricating an electrode structure Aug. 6, 2002
6423562 Contact electrode for n-type gallium nitride-based compound semiconductor and method for forming the same Jul. 23, 2002
6410944 Epitaxial structure for low ohmic contact resistance in p-type GaN-based semiconductors Jun. 25, 2002

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