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Class Information
Number: 257/E29.144
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrodes (epo) > Of specified material (epo) > Ohmic electrodes (epo) > On group iii-v material (epo)
Description: This subclass is indented under subclass E29.143. This subclass is substantially the same in scope as ECLA classification H01L29/45B.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7420227 |
Cu-metalized compound semiconductor device |
Sep. 2, 2008 |
| 7285857 |
GaN-based III--V group compound semiconductor device and p-type electrode for the same |
Oct. 23, 2007 |
| 7190076 |
Electrode for p-type Group III nitride compound semiconductor layer and method for producing the same |
Mar. 13, 2007 |
| 7055745 |
Laser scanning method and system employing visible scanning-zone indicators identifying a three-dimensional omni-directional laser scanning volume for package transport |
Jun. 6, 2006 |
| 7009218 |
Nitride semiconductor device |
Mar. 7, 2006 |
| 6936487 |
Semiconductor device with ohmic electrode formed on compound semiconductor having wide band gap and its manufacture method |
Aug. 30, 2005 |
| 6917061 |
AlGaAs or InGaP low turn-on voltage GaAs-based heterojunction bipolar transistor |
Jul. 12, 2005 |
| 6897137 |
Process for fabricating ultra-low contact resistances in GaN-based devices |
May. 24, 2005 |
| 6894391 |
Electrode structure on P-type III group nitride semiconductor layer and formation method thereof |
May. 17, 2005 |
| 6894325 |
Fabrication of low resistance, non-alloyed, ohmic contacts to InP using non-stoichiometric InP layers |
May. 17, 2005 |
| 6887311 |
Method of forming ohmic electrode |
May. 3, 2005 |
| 6884704 |
Ohmic metal contact and channel protection in GaN devices using an encapsulation layer |
Apr. 26, 2005 |
| 6864510 |
Nitride semiconductor field effect transistor (FET) and method of fabricating the same |
Mar. 8, 2005 |
| 6858522 |
Electrical contact for compound semiconductor device and method for forming same |
Feb. 22, 2005 |
| 6852615 |
Ohmic contacts for high electron mobility transistors and a method of making the same |
Feb. 8, 2005 |
| 6830189 |
METHOD OF AND SYSTEM FOR PRODUCING DIGITAL IMAGES OF OBJECTS WITH SUBTANTIALLY REDUCED SPECKLE-NOISE PATTERNS BY ILLUMINATING SAID OBJECTS WITH SPATIALLY AND/OR TEMPORALLY COHERENT-REDUCED PLA |
Dec. 14, 2004 |
| 6759312 |
Co-implantation of group VI elements and N for formation of non-alloyed ohmic contacts for n-type semiconductors |
Jul. 6, 2004 |
| 6734468 |
Devices related to electrode pads for p-type group III nitride compound semiconductors |
May. 11, 2004 |
| 6705526 |
AUTOMATED METHOD OF AND SYSTEM FOR DIMENSIONING OBJECTS TRANSPORTED THROUGH A WORK ENVIRONMENT USING CONTOUR TRACING, VERTICE DETECTION, CORNER POINT DETECTION, AND CORNER POINT REDUCTION METH |
Mar. 16, 2004 |
| 6693352 |
Contact structure for group III-V semiconductor devices and method of producing the same |
Feb. 17, 2004 |
| 6683332 |
Heterojunction bipolar transistor and manufacturing method therefor including electrode alloyed reaction layers |
Jan. 27, 2004 |
| 6661037 |
Low emitter resistance contacts to GaAs high speed HBT |
Dec. 9, 2003 |
| 6639316 |
Electrode having substrate and surface electrode components for a semiconductor device |
Oct. 28, 2003 |
| 6629640 |
Holographic laser scanning method and system employing visible scanning-zone indicators identifying a three-dimensional omni-directional laser scanning volume for package transport navigation |
Oct. 7, 2003 |
| 6610606 |
Method for manufacturing nitride compound based semiconductor device using an RIE to clean a GaN-based layer |
Aug. 26, 2003 |
| 6583455 |
Fabrication of low resistance, non-alloyed, OHMIC contacts to INP using non-stoichiometric INP layers |
Jun. 24, 2003 |
| 6583454 |
Nitride based transistors on semi-insulating silicon carbide substrates |
Jun. 24, 2003 |
| 6577006 |
III-V nitride based semiconductor light emitting device |
Jun. 10, 2003 |
| 6573599 |
Electrical contact for compound semiconductor device and method for forming same |
Jun. 3, 2003 |
| 6570194 |
Compound semiconductor field effect transistor with improved ohmic contact layer structure and method of forming the same |
May. 27, 2003 |
| 6555457 |
Method of forming a laser circuit having low penetration ohmic contact providing impurity gettering and the resultant laser circuit |
Apr. 29, 2003 |
| 6531715 |
Multilayer contact electrode for compound semiconductors and production method thereof |
Mar. 11, 2003 |
| 6521998 |
Electrode structure for nitride III-V compound semiconductor devices |
Feb. 18, 2003 |
| 6486502 |
Nitride based transistors on semi-insulating silicon carbide substrates |
Nov. 26, 2002 |
| 6452244 |
Film-like composite structure and method of manufacture thereof |
Sep. 17, 2002 |
| 6429111 |
Methods for fabricating an electrode structure |
Aug. 6, 2002 |
| 6423562 |
Contact electrode for n-type gallium nitride-based compound semiconductor and method for forming the same |
Jul. 23, 2002 |
| 6410460 |
Technology for thermodynamically stable contacts for binary wide band gap semiconductors |
Jun. 25, 2002 |
| 6410944 |
Epitaxial structure for low ohmic contact resistance in p-type GaN-based semiconductors |
Jun. 25, 2002 |
| 6410946 |
Semiconductor device with source and drain electrodes in ohmic contact with a semiconductor layer |
Jun. 25, 2002 |
| 6392262 |
Compound semiconductor device having low-resistive ohmic contact electrode and process for producing ohmic electrode |
May. 21, 2002 |
| 6365969 |
Ohmic electrode, method of manufacturing the same and semiconductor device |
Apr. 2, 2002 |
| 6329716 |
Contact electrode for N-type gallium nitride-based compound semiconductor and method for forming the same |
Dec. 11, 2001 |
| 6326294 |
Method of fabricating an ohmic metal electrode for use in nitride compound semiconductor devices |
Dec. 4, 2001 |
| 6316793 |
Nitride based transistors on semi-insulating silicon carbide substrates |
Nov. 13, 2001 |
| 6313534 |
Ohmic electrode, method and multi-layered structure for making same |
Nov. 6, 2001 |
| 6287946 |
Fabrication of low resistance, non-alloyed, ohmic contacts to InP using non-stoichiometric InP layers |
Sep. 11, 2001 |
| 6281528 |
Ohmic contact improvement between layer of a semiconductor device |
Aug. 28, 2001 |
| 6258616 |
Method of making a semiconductor device having a non-alloyed ohmic contact to a buried doped layer |
Jul. 10, 2001 |
| 6239490 |
P-contact for a Group III-nitride semiconductor device and method of making same |
May. 29, 2001 |
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