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Class Information
Number: 257/E29.143
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrodes (epo) > Of specified material (epo) > Ohmic electrodes (epo)
Description: This subclass is indented under subclass E29.139. This subclass is substantially the same in scope as ECLA classification H01L29/45.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.144 On group iii-v material (epo) 247
257/E29.146 On silicon (epo) 496


Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8653565 Mixed mode multiple switch integration of multiple compound semiconductor FET devices Feb. 18, 2014
8629487 Semiconductor device and method of manufacturing same Jan. 14, 2014
8623752 Ohmic electrode for SiC semiconductor, method of manufacturing ohmic electrode for SiC semiconductor, semiconductor device, and method of manufacturing semiconductor device Jan. 7, 2014
8618538 Thin film transistor array panel and manufacturing method thereof Dec. 31, 2013
8390045 Semiconductor device and method of manufacturing same Mar. 5, 2013
8278721 Contact hole, semiconductor device and method for forming the same Oct. 2, 2012
8093618 Multi-layer ohmic electrode, semiconductor light emitting element having multi-layer ohmic electrode, and method of forming same Jan. 10, 2012
8076777 Glass compositions used in conductors for photovoltaic cells Dec. 13, 2011
8026542 Low resistance peripheral local interconnect contacts with selective wet strip of titanium Sep. 27, 2011
7993948 Semiconductor device, method for fabricating an electrode, and method for manufacturing a semiconductor device Aug. 9, 2011
7872328 Capacitor electrode that contains oxygen and nitrogen Jan. 18, 2011
7800105 Ga.sub.2O.sub.3 semiconductor device Sep. 21, 2010
7781802 Semiconductor device and manufacturing method thereof Aug. 24, 2010
7671378 Photonic devices formed on substrates and their fabrication methods Mar. 2, 2010
7667998 Phase change memory device and method of forming the same Feb. 23, 2010
7659628 Contact structure comprising semiconductor and metal islands Feb. 9, 2010
7592641 Semiconductor device, method for fabricating an electrode, and method for manufacturing a semiconductor device Sep. 22, 2009
7586131 Transistor array and active-matrix substrate Sep. 8, 2009
7575944 Method of manufacturing nitride-based semiconductor light emitting diode Aug. 18, 2009
7560758 MOSFETs comprising source/drain recesses with slanted sidewall surfaces, and methods for fabricating the same Jul. 14, 2009
7557385 Electronic devices formed on substrates and their fabrication methods Jul. 7, 2009
7479451 Display device manufacturing method preventing diffusion of an aluminum element into a polysilicon layer in a heating step Jan. 20, 2009
7420227 Cu-metalized compound semiconductor device Sep. 2, 2008
7368822 Copper metalized ohmic contact electrode of compound device May. 6, 2008
7358585 Silicon-based Schottky barrier infrared optical detector Apr. 15, 2008
7321140 Magnetron sputtered metallization of a nickel silicon alloy, especially useful as solder bump barrier Jan. 22, 2008
7297626 Process for nickel silicide Ohmic contacts to n-SiC Nov. 20, 2007
7238970 Semiconductor device and method for fabricating the same Jul. 3, 2007
7202168 Method of producing semiconductor device Apr. 10, 2007
7183207 Chemical vapor deposition metallization processes and chemical vapor deposition apparatus used therein Feb. 27, 2007
6974751 Semiconductor device and method for producing the same Dec. 13, 2005
6955978 Uniform contact Oct. 18, 2005
6943376 Electrode for p-type SiC Sep. 13, 2005
6936850 Semiconductor device made from silicon carbide with a Schottky contact and an ohmic contact made from a nickel-aluminum material Aug. 30, 2005
6815351 Method for contacting a semiconductor configuration Nov. 9, 2004
6784114 Monatomic layer passivation of semiconductor surfaces Aug. 31, 2004
6770912 Semiconductor device and method for producing the same Aug. 3, 2004
6770508 Electrode for silicon carbide semiconductor, silicon carbide semiconductor element comprising the electrode, and production method therefor Aug. 3, 2004
6759312 Co-implantation of group VI elements and N for formation of non-alloyed ohmic contacts for n-type semiconductors Jul. 6, 2004
6667495 Semiconductor configuration with ohmic contact-connection and method for contact-connecting a semiconductor configuration Dec. 23, 2003
6645831 Thermally stable crystalline defect-free germanium bonded to silicon and silicon dioxide Nov. 11, 2003
6639316 Electrode having substrate and surface electrode components for a semiconductor device Oct. 28, 2003
6627919 Thermally stable nickel germanosilicide formed on SiGe Sep. 30, 2003
6583510 Semiconductor device with varying thickness gold electrode Jun. 24, 2003
6544674 Stable electrical contact for silicon carbide devices Apr. 8, 2003
6506637 Method to form thermally stable nickel germanosilicide on SiGe Jan. 14, 2003
6469319 Ohmic contact to a II-VI compound semiconductor device and a method of manufacturing the same Oct. 22, 2002
6468890 Semiconductor device with ohmic contact-connection and method for the ohmic contact-connection of a semiconductor device Oct. 22, 2002
6452244 Film-like composite structure and method of manufacture thereof Sep. 17, 2002
6410460 Technology for thermodynamically stable contacts for binary wide band gap semiconductors Jun. 25, 2002

1 2 3










 
 
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