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Class Information
Number: 257/E29.14
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrodes (epo) > Of specified material (epo) > For gate of heterojunction field-effect devices (epo)
Description: This subclass is indented under subclass E29.139. This subclass is substantially the same in scope as ECLA classification H01L29/43B.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8492840 Semiconductor device having an oxide semiconductor layer Jul. 23, 2013
8222099 Semiconductor device and method of manufacturing the same Jul. 17, 2012
8217456 Low capacitance hi-K dual work function metal gate body-contacted field effect transistor Jul. 10, 2012
7829916 Transistor with a germanium-based channel encased by a gate electrode and method for producing one such transistor Nov. 9, 2010
7671383 Semiconductor device and method of producing the same Mar. 2, 2010
7566918 Nitride based transistors for millimeter wave operation Jul. 28, 2009
7402844 Metal semiconductor field effect transistors (MESFETS) having channels of varying thicknesses and related methods Jul. 22, 2008
7388236 High efficiency and/or high power density wide bandgap transistors Jun. 17, 2008
7355215 Field effect transistors (FETs) having multi-watt output power at millimeter-wave frequencies Apr. 8, 2008
7329909 Nitride semiconductor device Feb. 12, 2008
7304330 Nitride semiconductor device Dec. 4, 2007
7005344 Method of forming a device with a gallium nitride or gallium aluminum nitride gate Feb. 28, 2006
6781876 Memory device with gallium nitride or gallium aluminum nitride gate Aug. 24, 2004
6759308 Silicon on insulator field effect transistor with heterojunction gate Jul. 6, 2004
6307775 Deaprom and transistor with gallium nitride or gallium aluminum nitride gate Oct. 23, 2001
6249020 DEAPROM and transistor with gallium nitride or gallium aluminum nitride gate Jun. 19, 2001
6031263 DEAPROM and transistor with gallium nitride or gallium aluminum nitride gate Feb. 29, 2000
5610410 III-V compound semiconductor device with Schottky electrode of increased barrier height Mar. 11, 1997
5343057 Thin film, field effect transistor with a controlled energy band Aug. 30, 1994
5290719 Method of making complementary heterostructure field effect transistors Mar. 1, 1994
5214298 Complementary heterostructure field effect transistors May. 25, 1993
5206528 Compound semiconductor field effect transistor having a gate insulator formed of insulative superlattice layer Apr. 27, 1993
5180681 Method of making high current, high voltage breakdown field effect transistor Jan. 19, 1993
5161235 Field-effect compound semiconductive transistor with GaAs gate to increase barrier height and reduce turn-on threshold Nov. 3, 1992
5144378 High electron mobility transistor Sep. 1, 1992
5117268 Thermionic emission type static induction transistor and its integrated circuit May. 26, 1992
5111255 Buried channel heterojunction field effect transistor May. 5, 1992
5086321 Unpinned oxide-compound semiconductor structures and method of forming same Feb. 4, 1992
5084743 High current, high voltage breakdown field effect transistor Jan. 28, 1992
5081511 Heterojunction field effect transistor with monolayers in channel region Jan. 14, 1992
5075746 Thin film field effect transistor and a method of manufacturing the same Dec. 24, 1991
5036374 Insulated gate semiconductor device using compound semiconductor at the channel Jul. 30, 1991
5023674 Field effect transistor Jun. 11, 1991
4987095 Method of making unpinned oxide-compound semiconductor structures Jan. 22, 1991
4965645 Saturable charge FET Oct. 23, 1990
4962409 Staggered bandgap gate field effect transistor Oct. 9, 1990
4929985 Compound semiconductor device May. 29, 1990
4903091 Heterojunction transistor having bipolar characteristics Feb. 20, 1990
4870469 Tunnel injection type static transistor and its integrated circuit Sep. 26, 1989
4866491 Heterojunction field effect transistor having gate threshold voltage capability Sep. 12, 1989
4849797 Thin film transistor Jul. 18, 1989
4837605 Indium-phosphide hetero-MIS-gate field effect transistor Jun. 6, 1989
4814851 High transconductance complementary (Al,Ga)As/gas heterostructure insulated gate field-effect transistor Mar. 21, 1989
4814838 Semiconductor device and method of manufacturing the same Mar. 21, 1989
4757358 MESFET semiconductor device fabrication with same metal contacting source, drain and gate regions Jul. 12, 1988
4745449 Integrated electronics suitable for optical communications May. 17, 1988
4745447 Gallium arsenide on gallium indium arsenide Schottky barrier device May. 17, 1988
4737827 Heterojunction-gate field-effect transistor enabling easy control of threshold voltage Apr. 12, 1988
4732870 Method of making complementary field effect transistors Mar. 22, 1988
4729000 Low power AlGaAs/GaAs complementary FETs incorporating InGaAs n-channel gates Mar. 1, 1988

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