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Class Information
Number: 257/E29.139
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrodes (epo) > Of specified material (epo)
Description: This subclass is indented under subclass E29.002. This subclass is substantially the same in scope as ECLA classification H01L29/43.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.15 Electrodes for igfet (epo) 64
257/E29.14 For gate of heterojunction field-effect devices (epo) 68
257/E29.143 Ohmic electrodes (epo) 136
257/E29.141 Resistive materials for field-effect devices (epo) 69
257/E29.148 Schottky barrier electrodes (epo) 192
257/E29.142 Superconductor materials (epo) 13


Patents under this class:

Patent Number Title Of Patent Date Issued
8546885 Metal gate electrode of a field effect transistor Oct. 1, 2013
8507956 Wire structure, method for fabricating wire, thin film transistor substrate, and method for fabricating the thin film transistor substrate Aug. 13, 2013
8399883 Nitrogen-oxide gas sensor with long signal stability Mar. 19, 2013
8247851 Method of manufacturing semiconductor device for providing improved isolation between contact and cell gate electrode Aug. 21, 2012
8148231 Method of fabricating capacitor Apr. 3, 2012
8115264 Semiconductor device having a metal gate with a low sheet resistance and method of fabricating metal gate of the same Feb. 14, 2012
8022383 Two-terminal resistance switching element with silicon, and semiconductor device Sep. 20, 2011
7960186 Method of forming ferromagnetic material, transistor and method of manufacturing the same Jun. 14, 2011
7960283 Method for reducing silicide defects in integrated circuits Jun. 14, 2011
7948081 Carbon nanotube structure, a semiconductor device, a semiconductor package and a manufacturing method of a semiconductor device May. 24, 2011
7919795 Wire structure, method for fabricating wire, thin film transistor substrate, and method for fabricating the thin film transistor substrate Apr. 5, 2011
7795689 Semiconductor device including a germanium silicide film on a selective epitaxial layer Sep. 14, 2010
7745320 Method for reducing silicide defects in integrated circuits Jun. 29, 2010
7745812 Integrated circuit including vertical diode Jun. 29, 2010
7737511 Semiconductor device and method of manufacturing the same Jun. 15, 2010
7709865 Substrate for an organic field effect transistor, use of said substrate, method of increasing the charge carrier mobility, and organic field effect transistor (OFET) May. 4, 2010
7675055 Strained complementary metal oxide semiconductor (CMOS) on rotated wafers and methods thereof Mar. 9, 2010
7629636 Semiconductor device and manufacturing method thereof Dec. 8, 2009
7508033 Semiconductor device with diamond-like carbon film on backside of substrate Mar. 24, 2009
7456488 Porogen material Nov. 25, 2008
7420227 Cu-metalized compound semiconductor device Sep. 2, 2008
7384875 Method of manufacturing semiconductor device using flexible tube Jun. 10, 2008
7348611 Strained complementary metal oxide semiconductor (CMOS) on rotated wafers and methods thereof Mar. 25, 2008
7321140 Magnetron sputtered metallization of a nickel silicon alloy, especially useful as solder bump barrier Jan. 22, 2008
7309895 Semiconductor device Dec. 18, 2007
7297983 Method for fabricating an integrated circuit on a semiconductor substrate Nov. 20, 2007
7126181 Capacitor constructions Oct. 24, 2006
5940725 Semiconductor device with non-deposited barrier layer Aug. 17, 1999
5612236 Method of forming a silicon semiconductor device using doping during deposition of polysilicon Mar. 18, 1997
5510651 Semiconductor device having a reducing/oxidizing conductive material Apr. 23, 1996
5444011 Method for forming a thin film capacitive memory deivce with a high dielectric constant Aug. 22, 1995
5407855 Process for forming a semiconductor device having a reducing/oxidizing conductive material Apr. 18, 1995
5387459 Multilayer structure having an epitaxial metal electrode Feb. 7, 1995
5365096 Thin film capacitive memory device with a high dielectric constant Nov. 15, 1994
5341014 Semiconductor device and a method of fabricating the same Aug. 23, 1994
5293510 Semiconductor device with ferroelectric and method of manufacturing the same Mar. 8, 1994
5237196 Semiconductor device and method for manufacturing the same Aug. 17, 1993
5214304 Semiconductor device May. 25, 1993
5170242 Reaction barrier for a multilayer structure in an integrated circuit Dec. 8, 1992
5005102 Multilayer electrodes for integrated circuit capacitors Apr. 2, 1991
4875083 Metal-insulator-semiconductor capacitor formed on silicon carbide Oct. 17, 1989
4807015 Semiconductor device having electrodes and or interconnections of refractory metal film containing silicon oxide Feb. 21, 1989
4713358 Method of fabricating recessed gate static induction transistors Dec. 15, 1987
4672419 Metal gate, interconnect and contact system for VLSI devices Jun. 9, 1987











 
 
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