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Class Information
Number: 257/E29.135
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrodes (epo) > Characterized by their shape, relative sizes or dispositions (epo) > Not carrying current to be rectified, amplified, or switched (epo) > Gate stack for field-effect devices (epo) > For field-effect transistors (epo) > With insulated gate (epo) > Characterized by configuration of gate electrode layer (epo) > Characterized by length or sectional shape (epo)
Description: This subclass is indented under subclass E29.134. This subclass is substantially the same in scope as ECLA classification H01L29/423D2B7B.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7572719 |
Semiconductor device and manufacturing method thereof |
Aug. 11, 2009 |
| 7538386 |
MOS transistor having protruded-shape channel and method of fabricating the same |
May. 26, 2009 |
| 7534677 |
Method of fabricating a dual gate oxide |
May. 19, 2009 |
| 7528455 |
Narrow width metal oxide semiconductor transistor |
May. 5, 2009 |
| 7445975 |
Method for the production of a semiconductor component having a metallic gate electrode disposed in a double-recess structure |
Nov. 4, 2008 |
| 7432563 |
Method for producing a semiconductor component and semiconductor component produced by the same |
Oct. 7, 2008 |
| 7368769 |
MOS transistor having a recessed gate electrode and fabrication method thereof |
May. 6, 2008 |
| 7339241 |
FinFET structure with contacts |
Mar. 4, 2008 |
| 7326621 |
Method of fabricating a recess channel array transistor using a mask layer with a high etch selectivity with respect to a silicon substrate |
Feb. 5, 2008 |
| 7323746 |
Recess gate-type semiconductor device and method of manufacturing the same |
Jan. 29, 2008 |
| 7176534 |
Low resistance T-gate MOSFET device using a damascene gate process and an innovative oxide removal etch |
Feb. 13, 2007 |
| 7109549 |
Semiconductor device and method of manufacturing the same |
Sep. 19, 2006 |
| 7061056 |
High f.sub.MAX deep submicron MOSFET |
Jun. 13, 2006 |
| 7045845 |
Self-aligned vertical gate semiconductor device |
May. 16, 2006 |
| 7041585 |
Process for producing an integrated electronic component |
May. 9, 2006 |
| 7041552 |
Integrated metal-insulator-metal capacitor and metal gate transistor |
May. 9, 2006 |
| 7034346 |
Semiconductor device and method for manufacturing the same |
Apr. 25, 2006 |
| 7034354 |
Semiconductor structure with lining layer partially etched on sidewall of the gate |
Apr. 25, 2006 |
| 6995434 |
Semiconductor device and method of fabricating the same |
Feb. 7, 2006 |
| 6992388 |
Formation of micro rough polysurface for low sheet resistant salicided sub-quarter micron polylines |
Jan. 31, 2006 |
| 6979634 |
Manufacturing method for semiconductor device having a T-type gate electrode |
Dec. 27, 2005 |
| 6974743 |
Method of making encapsulated spacers in vertical pass gate DRAM and damascene logic gates |
Dec. 13, 2005 |
| 6956263 |
Field effect transistor structure with self-aligned raised source/drain extensions |
Oct. 18, 2005 |
| 6943400 |
Semiconductor device and its manufacturing method |
Sep. 13, 2005 |
| 6933620 |
Semiconductor component and method of manufacture |
Aug. 23, 2005 |
| 6924532 |
Field-effect power transistor |
Aug. 2, 2005 |
| 6921940 |
MOS transistor and fabrication method thereof |
Jul. 26, 2005 |
| 6909145 |
Metal spacer gate for CMOS FET |
Jun. 21, 2005 |
| 6905976 |
Structure and method of forming a notched gate field effect transistor |
Jun. 14, 2005 |
| 6891235 |
FET with T-shaped gate |
May. 10, 2005 |
| 6887764 |
Method for producing a gate structure for an MOS transistor |
May. 3, 2005 |
| 6881688 |
Method of fabricating a vertically profiled electrode and semiconductor device comprising such an electrode |
Apr. 19, 2005 |
| 6878580 |
Semiconductor device having gate with negative slope and method for manufacturing the same |
Apr. 12, 2005 |
| 6861684 |
Method of fabricating a vertical insulated gate transistor with low overlap of the gate on the source and the drain, and an integrated circuit including this kind of transistor |
Mar. 1, 2005 |
| 6853031 |
Structure of a trapezoid-triple-gate FET |
Feb. 8, 2005 |
| 6849532 |
Method of manufacturing a transistor in a semiconductor device |
Feb. 1, 2005 |
| 6838777 |
Semiconductor device and method of manufacturing the same |
Jan. 4, 2005 |
| 6818488 |
Process for making a gate for a short channel CMOS transistor structure |
Nov. 16, 2004 |
| 6812111 |
Methods for fabricating MOS transistors with notched gate electrodes |
Nov. 2, 2004 |
| 6806126 |
Method of manufacturing a semiconductor component |
Oct. 19, 2004 |
| 6803317 |
Method of making a vertical gate semiconductor device |
Oct. 12, 2004 |
| 6800528 |
Method of fabricating LDMOS semiconductor devices |
Oct. 5, 2004 |
| 6800536 |
Semiconductor device having an insulated gate and a fabrication process thereof |
Oct. 5, 2004 |
| 6797569 |
Method for low topography semiconductor device formation |
Sep. 28, 2004 |
| 6797549 |
High voltage MOS transistor with gate extension |
Sep. 28, 2004 |
| 6798028 |
Field effect transistor with reduced gate delay and method of fabricating the same |
Sep. 28, 2004 |
| 6797599 |
Gate structure and method |
Sep. 28, 2004 |
| 6787836 |
Integrated metal-insulator-metal capacitor and metal gate transistor |
Sep. 7, 2004 |
| 6784491 |
MOS devices with reduced fringing capacitance |
Aug. 31, 2004 |
| 6783997 |
Gate structure and method |
Aug. 31, 2004 |
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