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Class Information
Number: 257/E29.135
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrodes (epo) > Characterized by their shape, relative sizes or dispositions (epo) > Not carrying current to be rectified, amplified, or switched (epo) > Gate stack for field-effect devices (epo) > For field-effect transistors (epo) > With insulated gate (epo) > Characterized by configuration of gate electrode layer (epo) > Characterized by length or sectional shape (epo)
Description: This subclass is indented under subclass E29.134. This subclass is substantially the same in scope as ECLA classification H01L29/423D2B7B.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8692331 Semiconductor device and manufacturing method of the same Apr. 8, 2014
8598026 Semiconductor device and method of manufacturing the same Dec. 3, 2013
8581350 Field effect transistor and semiconductor device, and method for manufacturing same Nov. 12, 2013
8564063 Semiconductor device having metal gate and manufacturing method thereof Oct. 22, 2013
8536041 Method for fabricating transistor with high-K dielectric sidewall spacer Sep. 17, 2013
8330143 Semiconductor nanowire transistor Dec. 11, 2012
8298881 Nanowire FET with trapezoid gate structure Oct. 30, 2012
8232604 Transistor with high-k dielectric sidewall spacer Jul. 31, 2012
8222676 Transistor Jul. 17, 2012
8178406 Split gate device and method for forming May. 15, 2012
8076721 Fin structures and methods of fabricating fin structures Dec. 13, 2011
8049275 Semiconductor device Nov. 1, 2011
8022472 Semiconductor device and method of manufacturing semiconductor device Sep. 20, 2011
8008701 Method of making a floating gate non-volatile MOS semiconductor memory device with improved capacitive coupling and device thus obtained Aug. 30, 2011
7964459 Non-volatile memory structure and method of fabrication Jun. 21, 2011
7939895 Semiconductor device with forwardly tapered P-type FET gate electrode and reversely tapered N-type FET gate electrode and method of manufacturing same May. 10, 2011
7928482 Gate structure Apr. 19, 2011
7910957 Semiconductor device Mar. 22, 2011
7910974 Semiconductor device and method for fabricating thereof Mar. 22, 2011
7884399 Semiconductor device and method of fabricating the same Feb. 8, 2011
7842981 Semiconductor device and method of manufacturing the same Nov. 30, 2010
7821054 Semiconductor device and semiconductor system Oct. 26, 2010
7759203 MOS transistor having protruded-shape channel and method of fabricating the same Jul. 20, 2010
7737509 Semiconductor integrated circuit device Jun. 15, 2010
7732874 FinFET structure using differing gate dielectric materials and gate electrode materials Jun. 8, 2010
7700996 Tunable antifuse elements Apr. 20, 2010
7638838 Semiconductor device with substantial driving current and decreased junction leakage current Dec. 29, 2009
7638850 Non-volatile memory structure and method of fabrication Dec. 29, 2009
7572719 Semiconductor device and manufacturing method thereof Aug. 11, 2009
7538386 MOS transistor having protruded-shape channel and method of fabricating the same May. 26, 2009
7534677 Method of fabricating a dual gate oxide May. 19, 2009
7528455 Narrow width metal oxide semiconductor transistor May. 5, 2009
7445975 Method for the production of a semiconductor component having a metallic gate electrode disposed in a double-recess structure Nov. 4, 2008
7432563 Method for producing a semiconductor component and semiconductor component produced by the same Oct. 7, 2008
7368769 MOS transistor having a recessed gate electrode and fabrication method thereof May. 6, 2008
7339241 FinFET structure with contacts Mar. 4, 2008
7326621 Method of fabricating a recess channel array transistor using a mask layer with a high etch selectivity with respect to a silicon substrate Feb. 5, 2008
7323746 Recess gate-type semiconductor device and method of manufacturing the same Jan. 29, 2008
7176534 Low resistance T-gate MOSFET device using a damascene gate process and an innovative oxide removal etch Feb. 13, 2007
7109549 Semiconductor device and method of manufacturing the same Sep. 19, 2006
7061056 High f.sub.MAX deep submicron MOSFET Jun. 13, 2006
7045845 Self-aligned vertical gate semiconductor device May. 16, 2006
7041552 Integrated metal-insulator-metal capacitor and metal gate transistor May. 9, 2006
7041585 Process for producing an integrated electronic component May. 9, 2006
7034346 Semiconductor device and method for manufacturing the same Apr. 25, 2006
7034354 Semiconductor structure with lining layer partially etched on sidewall of the gate Apr. 25, 2006
6995434 Semiconductor device and method of fabricating the same Feb. 7, 2006
6992388 Formation of micro rough polysurface for low sheet resistant salicided sub-quarter micron polylines Jan. 31, 2006
6979634 Manufacturing method for semiconductor device having a T-type gate electrode Dec. 27, 2005
6974743 Method of making encapsulated spacers in vertical pass gate DRAM and damascene logic gates Dec. 13, 2005

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