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Class Information
Number: 257/E29.133
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrodes (epo) > Characterized by their shape, relative sizes or dispositions (epo) > Not carrying current to be rectified, amplified, or switched (epo) > Gate stack for field-effect devices (epo) > For field-effect transistors (epo) > With insulated gate (epo) > Characterized by insulating layer (epo) > Nonuniform insulating layer thickness (epo)
Description: This subclass is indented under subclass E29.132. This subclass is substantially the same in scope as ECLA classification H01L29/423D2B6B.

Patents under this class:
1 2 3 4 5 6 7 8 9 10

Patent Number Title Of Patent Date Issued
5498556 Metal-oxide-semiconductor field-effect transistor and its method of fabrication Mar. 12, 1996
5486484 Lateral power MOSFET structure using silicon carbide Jan. 23, 1996
5474944 Process for manufacturing integrated circuit with power field effect transistors Dec. 12, 1995
5473176 Vertical insulated gate transistor and method of manufacture Dec. 5, 1995
5468654 Method of manufacturing an insulated gate bipolar transistor Nov. 21, 1995
5447876 Method of making a diamond shaped gate mesh for cellular MOS transistor array Sep. 5, 1995
5448081 Lateral power MOSFET structure using silicon carbide Sep. 5, 1995
5444002 Method of fabricating a short-channel DMOS transistor with removable sidewall spacers Aug. 22, 1995
5442214 VDMOS transistor and manufacturing method therefor Aug. 15, 1995
5434095 Method for controlling electrical breakdown in semiconductor power devices Jul. 18, 1995
5434435 Trench gate lateral MOSFET Jul. 18, 1995
5429965 Method for manufacturing a semiconductor memory Jul. 4, 1995
5424231 Method for manufacturing a VDMOS transistor Jun. 13, 1995
5422505 FET having gate insulating films whose thickness is different depending on portions Jun. 6, 1995
5407844 Process for simultaneously fabricating an insulated gate field-effect transistor and a bipolar transistor Apr. 18, 1995
5405787 Structure and method of manufacture for MOS field effect transistor having lightly doped drain and source diffusion regions Apr. 11, 1995
5396097 Transistor with common base region Mar. 7, 1995
5391908 Lateral insulated gate field effect semiconductor Feb. 21, 1995
5382536 Method of fabricating lateral DMOS structure Jan. 17, 1995
5374575 Method for fabricating MOS transistor Dec. 20, 1994
5372960 Method of fabricating an insulated gate semiconductor device Dec. 13, 1994
5371391 MOS semiconductor device and method of fabricating the same Dec. 6, 1994
5355008 Diamond shaped gate mesh for cellular MOS transistor array Oct. 11, 1994
5346835 Triple diffused lateral resurf insulated gate field effect transistor compatible with process and method Sep. 13, 1994
5326711 High performance high voltage vertical transistor and method of fabrication Jul. 5, 1994
5322804 Integration of high voltage lateral MOS devices in low voltage CMOS architecture using CMOS-compatible process steps Jun. 21, 1994
5321295 Insulated gate bipolar transistor and method of fabricating the same Jun. 14, 1994
5314834 Field effect transistor having a gate dielectric with variable thickness May. 24, 1994
5313088 Vertical field effect transistor with diffused protection diode May. 17, 1994
5306655 Structure and method of manufacture for MOS field effect transistor having lightly doped drain and source diffusion regions Apr. 26, 1994
5298781 Vertical current flow field effect transistor with thick insulator over non-channel areas Mar. 29, 1994
5294824 High voltage transistor having reduced on-resistance Mar. 15, 1994
5283201 High density power device fabrication process Feb. 1, 1994
5278440 Semiconductor memory device with improved tunneling characteristics Jan. 11, 1994
5273922 High speed, low gate/drain capacitance DMOS device Dec. 28, 1993
5256586 Gate-to-drain overlapped MOS transistor fabrication process Oct. 26, 1993
5250449 Vertical type semiconductor device and method for producing the same Oct. 5, 1993
5246870 Method for making an improved high voltage thin film transistor having a linear doping profile Sep. 21, 1993
5242845 Method of production of vertical MOS transistor Sep. 7, 1993
5243211 Power FET with shielded channels Sep. 7, 1993
5231474 Semiconductor device with doped electrical breakdown control region Jul. 27, 1993
5229633 High voltage lateral enhancement IGFET Jul. 20, 1993
5218220 Power FET having reduced threshold voltage Jun. 8, 1993
5215934 Process for reducing program disturbance in EEPROM arrays Jun. 1, 1993
5208175 Method of making a nonvolatile semiconductor memory device May. 4, 1993
5187552 Shielded field-effect transistor devices Feb. 16, 1993
5179032 Mosfet structure having reduced capacitance and method of forming same Jan. 12, 1993
5165973 Ink jet recording sheet Nov. 24, 1992
5164325 Method of making a vertical current flow field effect transistor Nov. 17, 1992
5135880 Method of manufacturing a semiconductor device Aug. 4, 1992

1 2 3 4 5 6 7 8 9 10

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