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Class Information
Number: 257/E29.133
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrodes (epo) > Characterized by their shape, relative sizes or dispositions (epo) > Not carrying current to be rectified, amplified, or switched (epo) > Gate stack for field-effect devices (epo) > For field-effect transistors (epo) > With insulated gate (epo) > Characterized by insulating layer (epo) > Nonuniform insulating layer thickness (epo)
Description: This subclass is indented under subclass E29.132. This subclass is substantially the same in scope as ECLA classification H01L29/423D2B6B.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 5498556 |
Metal-oxide-semiconductor field-effect transistor and its method of fabrication |
Mar. 12, 1996 |
| 5486484 |
Lateral power MOSFET structure using silicon carbide |
Jan. 23, 1996 |
| 5474944 |
Process for manufacturing integrated circuit with power field effect transistors |
Dec. 12, 1995 |
| 5473176 |
Vertical insulated gate transistor and method of manufacture |
Dec. 5, 1995 |
| 5468654 |
Method of manufacturing an insulated gate bipolar transistor |
Nov. 21, 1995 |
| 5447876 |
Method of making a diamond shaped gate mesh for cellular MOS transistor array |
Sep. 5, 1995 |
| 5448081 |
Lateral power MOSFET structure using silicon carbide |
Sep. 5, 1995 |
| 5444002 |
Method of fabricating a short-channel DMOS transistor with removable sidewall spacers |
Aug. 22, 1995 |
| 5442214 |
VDMOS transistor and manufacturing method therefor |
Aug. 15, 1995 |
| 5434095 |
Method for controlling electrical breakdown in semiconductor power devices |
Jul. 18, 1995 |
| 5434435 |
Trench gate lateral MOSFET |
Jul. 18, 1995 |
| 5429965 |
Method for manufacturing a semiconductor memory |
Jul. 4, 1995 |
| 5424231 |
Method for manufacturing a VDMOS transistor |
Jun. 13, 1995 |
| 5422505 |
FET having gate insulating films whose thickness is different depending on portions |
Jun. 6, 1995 |
| 5407844 |
Process for simultaneously fabricating an insulated gate field-effect transistor and a bipolar transistor |
Apr. 18, 1995 |
| 5405787 |
Structure and method of manufacture for MOS field effect transistor having lightly doped drain and source diffusion regions |
Apr. 11, 1995 |
| 5396097 |
Transistor with common base region |
Mar. 7, 1995 |
| 5391908 |
Lateral insulated gate field effect semiconductor |
Feb. 21, 1995 |
| 5382536 |
Method of fabricating lateral DMOS structure |
Jan. 17, 1995 |
| 5374575 |
Method for fabricating MOS transistor |
Dec. 20, 1994 |
| 5372960 |
Method of fabricating an insulated gate semiconductor device |
Dec. 13, 1994 |
| 5371391 |
MOS semiconductor device and method of fabricating the same |
Dec. 6, 1994 |
| 5355008 |
Diamond shaped gate mesh for cellular MOS transistor array |
Oct. 11, 1994 |
| 5346835 |
Triple diffused lateral resurf insulated gate field effect transistor compatible with process and method |
Sep. 13, 1994 |
| 5326711 |
High performance high voltage vertical transistor and method of fabrication |
Jul. 5, 1994 |
| 5322804 |
Integration of high voltage lateral MOS devices in low voltage CMOS architecture using CMOS-compatible process steps |
Jun. 21, 1994 |
| 5321295 |
Insulated gate bipolar transistor and method of fabricating the same |
Jun. 14, 1994 |
| 5314834 |
Field effect transistor having a gate dielectric with variable thickness |
May. 24, 1994 |
| 5313088 |
Vertical field effect transistor with diffused protection diode |
May. 17, 1994 |
| 5306655 |
Structure and method of manufacture for MOS field effect transistor having lightly doped drain and source diffusion regions |
Apr. 26, 1994 |
| 5298781 |
Vertical current flow field effect transistor with thick insulator over non-channel areas |
Mar. 29, 1994 |
| 5294824 |
High voltage transistor having reduced on-resistance |
Mar. 15, 1994 |
| 5283201 |
High density power device fabrication process |
Feb. 1, 1994 |
| 5278440 |
Semiconductor memory device with improved tunneling characteristics |
Jan. 11, 1994 |
| 5273922 |
High speed, low gate/drain capacitance DMOS device |
Dec. 28, 1993 |
| 5256586 |
Gate-to-drain overlapped MOS transistor fabrication process |
Oct. 26, 1993 |
| 5250449 |
Vertical type semiconductor device and method for producing the same |
Oct. 5, 1993 |
| 5246870 |
Method for making an improved high voltage thin film transistor having a linear doping profile |
Sep. 21, 1993 |
| 5242845 |
Method of production of vertical MOS transistor |
Sep. 7, 1993 |
| 5243211 |
Power FET with shielded channels |
Sep. 7, 1993 |
| 5231474 |
Semiconductor device with doped electrical breakdown control region |
Jul. 27, 1993 |
| 5229633 |
High voltage lateral enhancement IGFET |
Jul. 20, 1993 |
| 5218220 |
Power FET having reduced threshold voltage |
Jun. 8, 1993 |
| 5215934 |
Process for reducing program disturbance in EEPROM arrays |
Jun. 1, 1993 |
| 5208175 |
Method of making a nonvolatile semiconductor memory device |
May. 4, 1993 |
| 5187552 |
Shielded field-effect transistor devices |
Feb. 16, 1993 |
| 5179032 |
Mosfet structure having reduced capacitance and method of forming same |
Jan. 12, 1993 |
| 5165973 |
Ink jet recording sheet |
Nov. 24, 1992 |
| 5164325 |
Method of making a vertical current flow field effect transistor |
Nov. 17, 1992 |
| 5135880 |
Method of manufacturing a semiconductor device |
Aug. 4, 1992 |
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