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Class Information
Number: 257/E29.133
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrodes (epo) > Characterized by their shape, relative sizes or dispositions (epo) > Not carrying current to be rectified, amplified, or switched (epo) > Gate stack for field-effect devices (epo) > For field-effect transistors (epo) > With insulated gate (epo) > Characterized by insulating layer (epo) > Nonuniform insulating layer thickness (epo)
Description: This subclass is indented under subclass E29.132. This subclass is substantially the same in scope as ECLA classification H01L29/423D2B6B.

Patents under this class:
1 2 3 4 5 6 7 8 9 10

Patent Number Title Of Patent Date Issued
6352885 Transistor having a peripherally increased gate insulation thickness and a method of fabricating the same Mar. 5, 2002
6346451 Laterial thin-film silicon-on-insulator (SOI) device having a gate electrode and a field plate electrode Feb. 12, 2002
6342709 Insulated gate semiconductor device Jan. 29, 2002
6326271 Asymmetric MOS technology power device Dec. 4, 2001
6319777 Trench semiconductor device manufacture with a thicker upper insulating layer Nov. 20, 2001
6313489 Lateral thin-film silicon-on-insulator (SOI) device having a lateral drift region with a retrograde doping profile, and method of making such a device Nov. 6, 2001
6310378 High voltage thin film transistor with improved on-state characteristics and method for making same Oct. 30, 2001
6307246 Semiconductor resurf devices formed by oblique trench implantation Oct. 23, 2001
6294481 Semiconductor device and method for manufacturing the same Sep. 25, 2001
6294429 Method of forming a point on a floating gate for electron injection Sep. 25, 2001
6291298 Process of manufacturing Trench gate semiconductor device having gate oxide layer with multiple thicknesses Sep. 18, 2001
6285060 Barrier accumulation-mode MOSFET Sep. 4, 2001
6284604 Method for producing a field-effect-controllable, vertical semiconductor component Sep. 4, 2001
6281079 MOS transistor in a single-transistor memory cell having a locally thickened gate oxide, and production process Aug. 28, 2001
6268626 DMOS field effect transistor with improved electrical characteristics and method for manufacturing the same Jul. 31, 2001
6265269 Method for fabricating a concave bottom oxide in a trench Jul. 24, 2001
6261913 Method for using thin spacers and oxidation in gate oxides Jul. 17, 2001
6262439 Silicon carbide semiconductor device Jul. 17, 2001
6262453 Double gate-oxide for reducing gate-drain capacitance in trenched DMOS with high-dopant concentration buried-region under trenched gate Jul. 17, 2001
6251763 Semiconductor device and method for manufacturing same Jun. 26, 2001
6239464 Semiconductor gate trench with covered open ends May. 29, 2001
6236099 Trench MOS device and process for radhard device May. 22, 2001
6228717 Method of manufacturing semiconductor devices with alleviated electric field concentration at gate edge portions May. 8, 2001
6229184 Semiconductor device with a modulated gate oxide thickness May. 8, 2001
6225661 MOS transistor with stepped gate insulator May. 1, 2001
6225669 Non-uniform gate/dielectric field effect transistor May. 1, 2001
6221737 Method of making semiconductor devices with graded top oxide and graded drift region Apr. 24, 2001
6222232 Asymmetric MOS technology power device Apr. 24, 2001
6222235 Small geometry high voltage semiconductor device Apr. 24, 2001
6218715 MOS transistor for high-speed operation Apr. 17, 2001
6207995 High K integration of gate dielectric with integrated spacer formation for high speed CMOS Mar. 27, 2001
6207485 Integration of high K spacers for dual gate oxide channel fabrication technique Mar. 27, 2001
6207513 Spacer process to eliminate corner transistor device Mar. 27, 2001
6200843 High-voltage, high performance FETs Mar. 13, 2001
6198129 Vertical type insulated gate transistor Mar. 6, 2001
6198127 MOS-gated power device having extended trench and doping zone and process for forming same Mar. 6, 2001
6194772 High-voltage semiconductor device with trench structure Feb. 27, 2001
6194294 Method of forming gate electrode in semiconductor device Feb. 27, 2001
6194741 MOSgated trench type power semiconductor with silicon carbide substrate and increased gate breakdown voltage and reduced on-resistance Feb. 27, 2001
6194760 Double-diffused MOS transistor and method of fabricating the same Feb. 27, 2001
6190973 Method of fabricating a high quality thin oxide Feb. 20, 2001
6191447 Power semiconductor devices that utilize tapered trench-based insulating regions to improve electric field profiles in highly doped drift region mesas and methods of forming same Feb. 20, 2001
6174773 Method of manufacturing vertical trench misfet Jan. 16, 2001
6174792 Method of manufacturing a semiconductor device Jan. 16, 2001
6153451 Transistor with increased operating voltage and method of fabrication Nov. 28, 2000
6136674 Mosfet with gate plug using differential oxide growth Oct. 24, 2000
6136657 Method for fabricating a semiconductor device having different gate oxide layers Oct. 24, 2000
6127235 Method for making asymmetrical gate oxide thickness in channel MOSFET region Oct. 3, 2000
6127251 Semiconductor device with a reduced width gate dielectric and method of making same Oct. 3, 2000
6127248 Fabrication method for semiconductor device Oct. 3, 2000

1 2 3 4 5 6 7 8 9 10

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