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Class Information
Number: 257/E29.133
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrodes (epo) > Characterized by their shape, relative sizes or dispositions (epo) > Not carrying current to be rectified, amplified, or switched (epo) > Gate stack for field-effect devices (epo) > For field-effect transistors (epo) > With insulated gate (epo) > Characterized by insulating layer (epo) > Nonuniform insulating layer thickness (epo)
Description: This subclass is indented under subclass E29.132. This subclass is substantially the same in scope as ECLA classification H01L29/423D2B6B.










Patents under this class:
1 2 3 4 5 6 7 8 9 10

Patent Number Title Of Patent Date Issued
6841826 Low-GIDL MOSFET structure and method for fabrication Jan. 11, 2005
6841472 Semiconductor device and method of fabricating the same Jan. 11, 2005
6838346 Method of fabricating a high-voltage transistor with a multi-layered extended drain structure Jan. 4, 2005
6833584 Trench power semiconductor Dec. 21, 2004
6825536 Lateral power MOSFET for high switching speeds Nov. 30, 2004
6818954 Lateral high breakdown voltage MOSFET and device provided therewith Nov. 16, 2004
6815293 High-voltage lateral transistor with a multi-layered extended drain structure Nov. 9, 2004
6815284 Manufacturing method of semiconductor device Nov. 9, 2004
6812536 MOSFET with graded gate oxide layer Nov. 2, 2004
6809375 Semiconductor device having shallow trenches and method for manufacturing the same Oct. 26, 2004
6806533 Semiconductor component with an increased breakdown voltage in the edge area Oct. 19, 2004
6800509 Process for enhancement of voltage endurance and reduction of parasitic capacitance for a trench power MOSFET Oct. 5, 2004
6797588 Method for manufacturing a semiconductor device having a trench and a thick insulation film at the trench opening Sep. 28, 2004
6798020 High-voltage lateral transistor with a multi-layered extended drain structure Sep. 28, 2004
6798016 Trench MOS device and process for radhard device Sep. 28, 2004
6787827 Semiconductor device and method for manufacturing the same Sep. 7, 2004
6787847 High-voltage vertical transistor with a multi-layered extended drain structure Sep. 7, 2004
6787848 Vertical type power mosfet having trenched gate structure Sep. 7, 2004
6784486 Vertical power devices having retrograded-doped transition regions therein Aug. 31, 2004
6781198 High-voltage vertical transistor with a multi-layered extended drain structure Aug. 24, 2004
6781195 Semiconductor bidirectional switching device and method Aug. 24, 2004
6777293 DMOS transistor structure with gate electrode trench for high density integration and method of fabricating the structure Aug. 17, 2004
6773997 Method for manufacturing a high voltage MOSFET semiconductor device with enhanced charge controllability Aug. 10, 2004
6770951 P-type LDMOS device with buried layer to solve punch-through problems and process for its manufacture Aug. 3, 2004
6764889 Methods of forming vertical mosfets having trench-based gate electrodes within deeper trench-based source electrodes Jul. 20, 2004
6762457 LDMOS device having a tapered oxide Jul. 13, 2004
6756644 Ultra low QGD power MOSFET Jun. 29, 2004
6750518 Semiconductor device Jun. 15, 2004
6750512 MOS semiconductor device having inactive zone with alternating thickness silicon oxide layer located between a semiconductor region and a conductive layer Jun. 15, 2004
6750105 Method of fabricating a high-voltage transistor with a multi-layered extended drain structure Jun. 15, 2004
6747319 Semiconductor device and method of fabricating the same Jun. 8, 2004
6744101 Non-uniform gate/dielectric field effect transistor Jun. 1, 2004
6743688 High performance MOSFET with modulated channel gate thickness Jun. 1, 2004
6740952 High withstand voltage semiconductor device May. 25, 2004
6740944 Dual-oxide transistors for the improvement of reliability and off-state leakage May. 25, 2004
6740555 Semiconductor structures and manufacturing methods May. 25, 2004
6737707 Semiconductor device and manufacturing method thereof May. 18, 2004
6727568 Semiconductor device having a shallow trench isolation and method of fabricating the same Apr. 27, 2004
6724025 MOSFET having high and low dielectric materials Apr. 20, 2004
6720633 High withstand voltage insulated gate N-channel field effect transistor Apr. 13, 2004
6720631 Transistor having a deposited dual-layer spacer structure Apr. 13, 2004
6720616 Trench MOS transistor Apr. 13, 2004
6717200 Vertical field effect transistor with internal annular gate and method of production Apr. 6, 2004
6713331 Semiconductor device manufacturing using one element separation film Mar. 30, 2004
6713333 Method for fabricating a MOSFET Mar. 30, 2004
6713814 DMOS transistor structure with gate electrode trench for high density integration and method of fabricating the structure Mar. 30, 2004
6710404 High voltage device and method for fabricating the same Mar. 23, 2004
6709930 Thicker oxide formation at the trench bottom by selective oxide deposition Mar. 23, 2004
6710401 Semiconductor device including a trench with at least one of an edge of an opening and a bottom surface being round Mar. 23, 2004
6710416 Split-gate metal-oxide-semiconductor device Mar. 23, 2004

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