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Class Information
Number: 257/E29.133
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrodes (epo) > Characterized by their shape, relative sizes or dispositions (epo) > Not carrying current to be rectified, amplified, or switched (epo) > Gate stack for field-effect devices (epo) > For field-effect transistors (epo) > With insulated gate (epo) > Characterized by insulating layer (epo) > Nonuniform insulating layer thickness (epo)
Description: This subclass is indented under subclass E29.132. This subclass is substantially the same in scope as ECLA classification H01L29/423D2B6B.

Patents under this class:
1 2 3 4 5 6 7 8 9 10

Patent Number Title Of Patent Date Issued
8664713 Integrated power device on a semiconductor substrate having an improved trench gate structure Mar. 4, 2014
8481389 Method of removing high-K dielectric layer on sidewalls of gate structure Jul. 9, 2013
8426275 Fabrication method of trenched power MOSFET Apr. 23, 2013
8093663 Semiconductor device, method of fabricating the same, and patterning mask utilized by the method Jan. 10, 2012
7944004 Multiple thickness and/or composition high-K gate dielectrics and methods of making thereof May. 17, 2011
7923777 Power semiconductor device and method for manufacturing the same Apr. 12, 2011
7879737 Methods for fabricating improved gate dielectrics Feb. 1, 2011
7875938 LDMOS device with multiple gate insulating members Jan. 25, 2011
7847367 Semiconductor devices having a gate electrode and methods of fabricating the same Dec. 7, 2010
7842574 Method of manufacturing a semiconductor power device Nov. 30, 2010
7834417 Antifuse elements Nov. 16, 2010
7829400 Semiconductor device fabrication method and semiconductor device Nov. 9, 2010
7816727 High-.kappa. capped blocking dielectric bandgap engineered SONOS and MONOS Oct. 19, 2010
7808102 Multi-die DC-DC boost power converter with efficient packaging Oct. 5, 2010
7795675 Termination for trench MIS device Sep. 14, 2010
7759263 Methods for fabricating improved gate dielectrics Jul. 20, 2010
7759734 Semiconductor device Jul. 20, 2010
7727844 Gate structure of a semiconductor device Jun. 1, 2010
7696061 Semiconductor device and method for manufacturing same Apr. 13, 2010
7586151 Insulated gate semiconductor device Sep. 8, 2009
7557007 Method for manufacturing semiconductor device Jul. 7, 2009
7553704 Antifuse element and method of manufacture Jun. 30, 2009
7531871 Power semiconductor switching element May. 12, 2009
7446373 Semiconductor component and method for producing it Nov. 4, 2008
7220634 NROM memory cell, memory array, related devices and methods May. 22, 2007
7075145 Poly-sealed silicide trench gate Jul. 11, 2006
7071067 Fabrication of integrated devices using nitrogen implantation Jul. 4, 2006
7067363 Vertical-conduction and planar-structure MOS device with a double thickness of gate oxide and method for realizing power vertical MOS transistors with improved static and dynamic performances Jun. 27, 2006
7067874 Semiconductor device including trench with at least one of an edge of an opening and a bottom surface being round Jun. 27, 2006
7061047 Semiconductor device having trench gate structure and manufacturing method thereof Jun. 13, 2006
7061128 Semiconductor device and manufacturing method of the same Jun. 13, 2006
7056798 Semiconductor device, method for manufacturing the same, and liquid jet apparatus Jun. 6, 2006
7052954 Method of fabricating a MOS structure with two conductive layers on the gate electrode May. 30, 2006
7049657 Semiconductor device having a trench-gate structure May. 23, 2006
7045426 Vertical type power MOSFET having trenched gate structure May. 16, 2006
7041563 Semiconductor device having a shallow trench isolation and method of fabricating the same May. 9, 2006
7033891 Trench gate laterally diffused MOSFET devices and methods for making such devices Apr. 25, 2006
7033889 Trenched semiconductor devices and their manufacture Apr. 25, 2006
7033876 Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same Apr. 25, 2006
7026202 Inverse-T gate structure using damascene processing Apr. 11, 2006
7015112 Method of forming bottom oxide layer in trench structure Mar. 21, 2006
7012313 MOS transistor in a single-transistor memory cell having a locally thickened gate oxide Mar. 14, 2006
7012005 Self-aligned differential oxidation in trenches by ion implantation Mar. 14, 2006
7012301 Trench lateral power MOSFET and a method of manufacturing the same Mar. 14, 2006
7009247 Trench MIS device with thick oxide layer in bottom of gate contact trench Mar. 7, 2006
7005705 MOS transistor on an SOI substrate with a body contact and a gate insulating film with variable thickness Feb. 28, 2006
7005351 Method for fabricating a transistor configuration including trench transistor cells having a field electrode, trench transistor, and trench configuration Feb. 28, 2006
6998678 Semiconductor arrangement with a MOS-transistor and a parallel Schottky-diode Feb. 14, 2006
6992352 Trenched DMOS devices and methods and processes for making same Jan. 31, 2006
6987299 High-voltage lateral transistor with a multi-layered extended drain structure Jan. 17, 2006

1 2 3 4 5 6 7 8 9 10

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