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Class Information
Number: 257/E29.132
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrodes (epo) > Characterized by their shape, relative sizes or dispositions (epo) > Not carrying current to be rectified, amplified, or switched (epo) > Gate stack for field-effect devices (epo) > For field-effect transistors (epo) > With insulated gate (epo) > Characterized by insulating layer (epo)
Description: This subclass is indented under subclass E29.128. This subclass is substantially the same in scope as ECLA classification H01L29/423D2B6.

Sub-classes under this class:

Class Number Class Name Patents
257/E29.133 Nonuniform insulating layer thickness (epo) 499

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8633537 Memory transistor with multiple charge storing layers and a high work function gate electrode Jan. 21, 2014
8546211 Replacement gate having work function at valence band edge Oct. 1, 2013
8541780 Semiconductor device having oxide semiconductor layer Sep. 24, 2013
8525274 Semiconductor device and method of manufacturing the same Sep. 3, 2013
8445975 Replacement metal gate transistors with reduced gate oxide leakage May. 21, 2013
8431926 Semiconductor device having oxide semiconductor layer Apr. 30, 2013
8368138 Non-volatile memory devices and methods of manufacturing the same Feb. 5, 2013
8324620 Semiconductor device having oxide semiconductor layer Dec. 4, 2012
8319295 Use of F-based gate etch to passivate the high-k/metal gate stack for deep submicron transistor technologies Nov. 27, 2012
8168547 Manufacturing method of semiconductor device May. 1, 2012
8125038 Nanolaminates of hafnium oxide and zirconium oxide Feb. 28, 2012
8102013 Lanthanide doped TiO.sub.x films Jan. 24, 2012
8063434 Memory transistor with multiple charge storing layers and a high work function gate electrode Nov. 22, 2011
8035173 CMOS transistors with differential oxygen content high-K dielectrics Oct. 11, 2011
8008693 Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same Aug. 30, 2011
7986016 Semiconductor device and associated manufacturing methodology for decreasing thermal instability between an insulating layer and a substrate Jul. 26, 2011
7964922 Structure, design structure and method of manufacturing dual metal gate VT roll-up structure Jun. 21, 2011
7928496 Semiconductor memory device and manufacturing method thereof Apr. 19, 2011
7923761 Semiconductor device including gate insulation film that is formed of pyroceramics, and method of manufacturing the same Apr. 12, 2011
7902588 Nonvolatile semiconductor memory device and method for manufacturing the same Mar. 8, 2011
7847367 Semiconductor devices having a gate electrode and methods of fabricating the same Dec. 7, 2010
7833891 Semiconductor device manufacturing method using oxygen diffusion barrier layer between buried oxide layer and high K dielectric layer Nov. 16, 2010
7829978 Closed loop CESL high performance CMOS device Nov. 9, 2010
7816727 High-.kappa. capped blocking dielectric bandgap engineered SONOS and MONOS Oct. 19, 2010
7804146 Semiconductor device and method for fabricating the same Sep. 28, 2010
7800160 Semiconductor device with a nitride film between a pair of oxide films Sep. 21, 2010
7772678 Metallic compound thin film that contains high-k dielectric metal, nitrogen, and oxygen Aug. 10, 2010
7759734 Semiconductor device Jul. 20, 2010
7755128 Semiconductor device containing crystallographically stabilized doped hafnium zirconium based materials Jul. 13, 2010
7727844 Gate structure of a semiconductor device Jun. 1, 2010
7723726 Thin film transistor substrate with bonding layer and method for fabricating the same May. 25, 2010
7719065 Ruthenium layer for a dielectric layer containing a lanthanide oxide May. 18, 2010
7719051 Nonvolatile semiconductor storage device and manufacturing method thereof May. 18, 2010
7709826 Rare earth-oxides, rare earth-nitrides, rare earth-phosphies, and ternary alloys with silicon May. 4, 2010
7691709 Method of fabricating flash memory using metal-oxide-crystal charge trap Apr. 6, 2010
7679148 Semiconductor device, production method and production device thereof Mar. 16, 2010
7675117 Multi-gate field effect transistor Mar. 9, 2010
7663195 P-channel power MIS field effect transistor and switching circuit Feb. 16, 2010
7586163 Semiconductor device having an electrode containing boron and manufacturing method thereof Sep. 8, 2009
7563731 Field effect transistor having a stressed dielectric layer based on an enhanced device topography Jul. 21, 2009
7511326 ALD of amorphous lanthanide doped TiO.sub.x films Mar. 31, 2009
7446380 Stabilization of flatband voltages and threshold voltages in hafnium oxide based silicon transistors for CMOS Nov. 4, 2008
7385265 High dielectric constant MOSFET device Jun. 10, 2008
7382013 Dielectric thin film, dielectric thin film device, and method of production thereof Jun. 3, 2008
7372112 Semiconductor device, process for producing the same and process for producing metal compound thin film May. 13, 2008
7332769 Non-volatile memory arrangement having nanocrystals Feb. 19, 2008
7323754 Semiconductor device and its manufacture method Jan. 29, 2008
7282752 MOSFET with a thin gate insulating film Oct. 16, 2007
7253061 Method of forming a gate insulator in group III-V nitride semiconductor devices Aug. 7, 2007
7238997 Semiconductor device and method of manufacturing the same Jul. 3, 2007

1 2 3

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