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Class Information
Number: 257/E29.131
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrodes (epo) > Characterized by their shape, relative sizes or dispositions (epo) > Not carrying current to be rectified, amplified, or switched (epo) > Gate stack for field-effect devices (epo) > For field-effect transistors (epo) > With insulated gate (epo) > Gate electrodes for nonplanar mosfet (epo) > Having drain and source regions at different vertical level having channel composed only of vertical sidewall connecting drain and source layers (epo)
Description: This subclass is indented under subclass E29.13. This subclass is substantially the same in scope as ECLA classification H01L29/423D2B4B.










Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
8664713 Integrated power device on a semiconductor substrate having an improved trench gate structure Mar. 4, 2014
8659070 Semiconductor memory device and manufacturing method thereof Feb. 25, 2014
8648398 Electronic device and a transistor including a trench and a sidewall doped region Feb. 11, 2014
8609494 Surround gate CMOS semiconductor device Dec. 17, 2013
8580639 Method of making ultrahigh density vertical NAND memory device Nov. 12, 2013
8581333 Semiconductor device and method for manufacturing the same Nov. 12, 2013
8575690 Super-junction trench MOSFET having deep trenches with buried voids Nov. 5, 2013
8564058 Super-junction trench MOSFET with multiple trenched gates in unit cell Oct. 22, 2013
8541831 Nonvolatile memory device and method for fabricating the same Sep. 24, 2013
8519473 Vertical transistor component Aug. 27, 2013
8486785 Surround gate CMOS semiconductor device Jul. 16, 2013
8487362 Semiconductor device and method of forming the same Jul. 16, 2013
8461000 Method of making ultrahigh density vertical NAND memory device Jun. 11, 2013
8435855 Methods of manufacturing semiconductor devices May. 7, 2013
8383501 Vertical field effect transistor arrays and methods for fabrication thereof Feb. 26, 2013
8367491 Method of manufacturing a vertical-type semiconductor device and method of operating a vertical-type semiconductor device Feb. 5, 2013
8361869 Method for manufacturing suspended fin and gate-all-around field effect transistor Jan. 29, 2013
8357970 Multi-level charge storage transistors and associated methods Jan. 22, 2013
8350316 Phase change memory cells having vertical channel access transistor and memory plane Jan. 8, 2013
8350317 Power semiconductor devices and methods of manufacture Jan. 8, 2013
8319275 Integrated circuit memory devices having selection transistors with nonuniform threshold voltage characteristics Nov. 27, 2012
8309417 Vertical-type semiconductor devices and methods of manufacturing the same Nov. 13, 2012
8310002 Semiconductor device and method of forming the same Nov. 13, 2012
8193579 Trench type semiconductor device and fabrication method for the same Jun. 5, 2012
8143680 Gated diode with non-planar source region Mar. 27, 2012
8101988 Nonvolatile semiconductor memory device Jan. 24, 2012
8067776 Method of manufacturing semiconductor device and semiconductor device manufactured thereof Nov. 29, 2011
8058683 Access device having vertical channel and related semiconductor device and a method of fabricating the access device Nov. 15, 2011
8044460 Electronic device with connecting structure Oct. 25, 2011
8039889 Non-volatile memory devices including stepped source regions and methods of fabricating the same Oct. 18, 2011
8008713 Vertical SOI trench SONOS cell Aug. 30, 2011
7999309 Semiconductor device Aug. 16, 2011
7994568 Vertical transistor of semiconductor device and method for forming the same Aug. 9, 2011
7989883 System and method for providing a poly cap and a no field oxide area to prevent formation of a vertical bird's beak structure in the manufacture of a semiconductor device Aug. 2, 2011
7989886 Alignment of trench for MOS Aug. 2, 2011
7981748 Method for fabricating a vertical field effect transistor array comprising a plurality of semiconductor pillars Jul. 19, 2011
7960780 Vertical-type semiconductor device Jun. 14, 2011
7947589 FinFET formation with a thermal oxide spacer hard mask formed from crystalline silicon layer May. 24, 2011
7943466 Method of forming a semiconductor device having sub-surface trench charge compensation regions May. 17, 2011
7910440 Semiconductor device and method for making the same Mar. 22, 2011
7906818 Memory array with a pair of memory-cell strings to a single conductive pillar Mar. 15, 2011
7851851 Three dimensional NAND memory Dec. 14, 2010
7843004 Power MOSFET with recessed field plate Nov. 30, 2010
7829943 Low-k isolation spacers for conductive regions Nov. 9, 2010
7825460 Vertical field effect transistor arrays and methods for fabrication thereof Nov. 2, 2010
7824977 Completely decoupled high voltage and low voltage transistor manufacturing processes Nov. 2, 2010
7791133 Semiconductor device with reduced gate-overlap capacitance and method of forming the same Sep. 7, 2010
7772048 Forming semiconductor fins using a sacrificial fin Aug. 10, 2010
7772633 DRAM cells with vertical transistors Aug. 10, 2010
7763938 Field effect transistor Jul. 27, 2010

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