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Class Information
Number: 257/E29.131
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrodes (epo) > Characterized by their shape, relative sizes or dispositions (epo) > Not carrying current to be rectified, amplified, or switched (epo) > Gate stack for field-effect devices (epo) > For field-effect transistors (epo) > With insulated gate (epo) > Gate electrodes for nonplanar mosfet (epo) > Having drain and source regions at different vertical level having channel composed only of vertical sidewall connecting drain and source layers (epo)
Description: This subclass is indented under subclass E29.13. This subclass is substantially the same in scope as ECLA classification H01L29/423D2B4B.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7423317 |
Split electrode gate trench power device |
Sep. 9, 2008 |
| 7397081 |
Sidewall semiconductor transistors |
Jul. 8, 2008 |
| 7388245 |
Semiconductor device, method for manufacturing the semiconductor device and portable electronic device provided with the semiconductor device |
Jun. 17, 2008 |
| 7388289 |
Local multilayered metallization |
Jun. 17, 2008 |
| 7358141 |
Semiconductor device and method for fabricating the same |
Apr. 15, 2008 |
| 7288815 |
Semiconductor device and manufacturing method thereof |
Oct. 30, 2007 |
| 7276754 |
Annular gate and technique for fabricating an annular gate |
Oct. 2, 2007 |
| 7256454 |
Electronic device including discontinuous storage elements and a process for forming the same |
Aug. 14, 2007 |
| 7217974 |
Output prediction logic circuits with ultra-thin vertical transistors and methods of formation |
May. 15, 2007 |
| 7173307 |
Semiconductor device and manufacturing method thereof |
Feb. 6, 2007 |
| 7166891 |
Semiconductor device with etch resistant electrical insulation layer between gate electrode and source electrode |
Jan. 23, 2007 |
| 7115945 |
Strained silicon fin structure |
Oct. 3, 2006 |
| 7112832 |
Transistor having multiple channels |
Sep. 26, 2006 |
| 7075145 |
Poly-sealed silicide trench gate |
Jul. 11, 2006 |
| 7067874 |
Semiconductor device including trench with at least one of an edge of an opening and a bottom surface being round |
Jun. 27, 2006 |
| 7052954 |
Method of fabricating a MOS structure with two conductive layers on the gate electrode |
May. 30, 2006 |
| 7042048 |
Semiconductor device and a method of manufacturing the same |
May. 9, 2006 |
| 7038275 |
Buried-gate-type semiconductor device |
May. 2, 2006 |
| 7033889 |
Trenched semiconductor devices and their manufacture |
Apr. 25, 2006 |
| 7034358 |
Vertical transistor, and a method for producing a vertical transistor |
Apr. 25, 2006 |
| 7034359 |
Vertical MOS transistor |
Apr. 25, 2006 |
| 7005347 |
Structures of and methods of fabricating trench-gated MIS devices |
Feb. 28, 2006 |
| 7005351 |
Method for fabricating a transistor configuration including trench transistor cells having a field electrode, trench transistor, and trench configuration |
Feb. 28, 2006 |
| 7005352 |
Trench-type MOSFET having a reduced device pitch and on-resistance |
Feb. 28, 2006 |
| 6992352 |
Trenched DMOS devices and methods and processes for making same |
Jan. 31, 2006 |
| 6969888 |
Planarized and silicided trench contact |
Nov. 29, 2005 |
| 6967139 |
Method of manufacturing semiconductor device |
Nov. 22, 2005 |
| 6956264 |
Trenched semiconductor devices and their manufacture |
Oct. 18, 2005 |
| 6943408 |
Semiconductor bidirectional switching device |
Sep. 13, 2005 |
| 6936890 |
Edge termination in MOS transistors |
Aug. 30, 2005 |
| 6921939 |
Power MOSFET and method for forming same using a self-aligned body implant |
Jul. 26, 2005 |
| 6916712 |
MOS-gated device having a buried gate and process for forming same |
Jul. 12, 2005 |
| 6903416 |
Trench transistors and methods for fabricating trench transistors |
Jun. 7, 2005 |
| 6900100 |
Trench semiconductor device having gate oxide layer with multiple thicknesses and processes of fabricating the same |
May. 31, 2005 |
| 6893923 |
Reduced mask count process for manufacture of mosgated device |
May. 17, 2005 |
| 6891223 |
Transistor configuration with a structure for making electrical contact with electrodes of a trench transistor cell |
May. 10, 2005 |
| 6885061 |
Semiconductor device and a method of manufacturing the same |
Apr. 26, 2005 |
| 6882004 |
Semiconductor component, trench structure transistor, trench MOSFET, IGBT, and field-plate transistor |
Apr. 19, 2005 |
| 6861701 |
Trench power MOSFET with planarized gate bus |
Mar. 1, 2005 |
| 6861703 |
Semiconductor device and method for fabricating the same |
Mar. 1, 2005 |
| 6849899 |
High speed trench DMOS |
Feb. 1, 2005 |
| 6838730 |
Semiconductor device |
Jan. 4, 2005 |
| 6838722 |
Structures of and methods of fabricating trench-gated MIS devices |
Jan. 4, 2005 |
| 6828626 |
Semiconductor device with vertical transistors |
Dec. 7, 2004 |
| 6818947 |
Buried gate-field termination structure |
Nov. 16, 2004 |
| 6815767 |
Insulated gate transistor |
Nov. 9, 2004 |
| 6809375 |
Semiconductor device having shallow trenches and method for manufacturing the same |
Oct. 26, 2004 |
| 6806533 |
Semiconductor component with an increased breakdown voltage in the edge area |
Oct. 19, 2004 |
| 6803281 |
Method of fabricating semiconductor device |
Oct. 12, 2004 |
| 6800900 |
Trench-gate semiconductor devices and their manufacture |
Oct. 5, 2004 |
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