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Class Information
Number: 257/E29.13
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrodes (epo) > Characterized by their shape, relative sizes or dispositions (epo) > Not carrying current to be rectified, amplified, or switched (epo) > Gate stack for field-effect devices (epo) > For field-effect transistors (epo) > With insulated gate (epo) > Gate electrodes for nonplanar mosfet (epo)
Description: This subclass is indented under subclass E29.128. This subclass is substantially the same in scope as ECLA classification H01L29/423D2B4.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7619281 |
Semiconductor device having buried gate line and method of fabricating the same |
Nov. 17, 2009 |
| 7601996 |
Semiconductor device and manufacturing method thereof |
Oct. 13, 2009 |
| 7588982 |
Methods of forming semiconductor constructions and flash memory cells |
Sep. 15, 2009 |
| 7576389 |
Semiconductor device and manufacture method thereof |
Aug. 18, 2009 |
| 7564105 |
Quasi-plannar and FinFET-like transistors on bulk silicon |
Jul. 21, 2009 |
| 7560368 |
Insulated gate planar integrated power device with co-integrated Schottky diode and process |
Jul. 14, 2009 |
| 7473594 |
Raised STI structure and superdamascene technique for NMOSFET performance enhancement with embedded silicon carbon |
Jan. 6, 2009 |
| 7470570 |
Process for fabrication of FinFETs |
Dec. 30, 2008 |
| 7439595 |
Field effect transistor having vertical channel structure |
Oct. 21, 2008 |
| 7432557 |
FinFET device with multiple channels |
Oct. 7, 2008 |
| 7411241 |
Vertical type nanotube semiconductor device |
Aug. 12, 2008 |
| 7397126 |
Semiconductor device |
Jul. 8, 2008 |
| 7319255 |
Semiconductor device including a metal gate electrode formed in a trench and method of forming thereof |
Jan. 15, 2008 |
| 7317230 |
Fin FET structure |
Jan. 8, 2008 |
| 7301187 |
High voltage field effect device and method |
Nov. 27, 2007 |
| 7262104 |
Selective channel implantation for forming semiconductor devices with different threshold voltages |
Aug. 28, 2007 |
| 7259430 |
Non-volatile memory device and method of manufacturing the same |
Aug. 21, 2007 |
| 7189660 |
Method of producing insulator thin film, insulator thin film, method of manufacturing semiconductor device, and semiconductor device |
Mar. 13, 2007 |
| 7067874 |
Semiconductor device including trench with at least one of an edge of an opening and a bottom surface being round |
Jun. 27, 2006 |
| 7063975 |
Shallow trench power MOSFET and IGBT |
Jun. 20, 2006 |
| 7056793 |
Semiconductor device and a method for manufacturing same |
Jun. 6, 2006 |
| 7049656 |
Field-effect-controllable semiconductor configuration with a laterally extending channel zone |
May. 23, 2006 |
| 7045845 |
Self-aligned vertical gate semiconductor device |
May. 16, 2006 |
| 7041556 |
Vertical transistor and method of making |
May. 9, 2006 |
| 7033891 |
Trench gate laterally diffused MOSFET devices and methods for making such devices |
Apr. 25, 2006 |
| 7034377 |
Semiconductor device and method of manufacturing the device |
Apr. 25, 2006 |
| 7012301 |
Trench lateral power MOSFET and a method of manufacturing the same |
Mar. 14, 2006 |
| 6987299 |
High-voltage lateral transistor with a multi-layered extended drain structure |
Jan. 17, 2006 |
| 6982202 |
Fabrication method for memory cell |
Jan. 3, 2006 |
| 6960798 |
High-voltage semiconductor component |
Nov. 1, 2005 |
| 6921940 |
MOS transistor and fabrication method thereof |
Jul. 26, 2005 |
| 6894329 |
High-voltage semiconductor component |
May. 17, 2005 |
| 6893923 |
Reduced mask count process for manufacture of mosgated device |
May. 17, 2005 |
| 6867456 |
Semiconductor device having high breakdown voltage without increased on resistance |
Mar. 15, 2005 |
| 6861702 |
Semiconductor device |
Mar. 1, 2005 |
| 6855985 |
Modular bipolar-CMOS-DMOS analog integrated circuit & power transistor technology |
Feb. 15, 2005 |
| 6846706 |
Power MOSFET with ultra-deep base and reduced on resistance |
Jan. 25, 2005 |
| 6838346 |
Method of fabricating a high-voltage transistor with a multi-layered extended drain structure |
Jan. 4, 2005 |
| 6836001 |
Semiconductor device having epitaxially-filled trench and method for manufacturing semiconductor device having epitaxially-filled trench |
Dec. 28, 2004 |
| 6828609 |
High-voltage semiconductor component |
Dec. 7, 2004 |
| 6825514 |
High-voltage semiconductor component |
Nov. 30, 2004 |
| 6819089 |
Power factor correction circuit with high-voltage semiconductor component |
Nov. 16, 2004 |
| 6815293 |
High-voltage lateral transistor with a multi-layered extended drain structure |
Nov. 9, 2004 |
| 6812522 |
Lateral type power MOS transistor having trench gate formed on silicon-on-insulator (SOI) substrate |
Nov. 2, 2004 |
| 6800899 |
Vertical transistors, electrical devices containing a vertical transistor, and computer systems containing a vertical transistor |
Oct. 5, 2004 |
| 6798020 |
High-voltage lateral transistor with a multi-layered extended drain structure |
Sep. 28, 2004 |
| 6781201 |
Semiconductor device including power MOSFET and peripheral MOSFET device having gate electrodes formed in the trenches |
Aug. 24, 2004 |
| 6777293 |
DMOS transistor structure with gate electrode trench for high density integration and method of fabricating the structure |
Aug. 17, 2004 |
| 6777726 |
MOSFET source, drain and gate regions in a trench between a semiconductor pillar and filling insulation |
Aug. 17, 2004 |
| 6777746 |
Field effect transistor and application device thereof |
Aug. 17, 2004 |
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