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Class Information
Number: 257/E29.125
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrodes (epo) > Characterized by their shape, relative sizes or dispositions (epo) > Not carrying current to be rectified, amplified, or switched (epo) > Gate electrodes for thyristors (epo)
Description: This subclass is indented under subclass E29.123. This subclass is substantially the same in scope as ECLA classification H01L29/423C.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8569117 Systems and methods integrating trench-gated thyristor with trench-gated rectifier Oct. 29, 2013
8530931 Semiconductor device and method of manufacturing the same Sep. 10, 2013
8390124 Semiconductor device and method of manufacturing semiconductor device including wiring via and switch via for connecting first and second wirings Mar. 5, 2013
8237234 Transistor gate electrode having conductor material layer Aug. 7, 2012
8217456 Low capacitance hi-K dual work function metal gate body-contacted field effect transistor Jul. 10, 2012
7968957 Transistor gate electrode having conductor material layer Jun. 28, 2011
7875958 Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures Jan. 25, 2011
7824977 Completely decoupled high voltage and low voltage transistor manufacturing processes Nov. 2, 2010
7808058 Method of forming a transistor having gate protection and transistor formed according to the method Oct. 5, 2010
7800135 Power semiconductor device and method of manufacturing a power semiconductor device Sep. 21, 2010
7759194 Electrically programmable device with embedded EEPROM and method for making thereof Jul. 20, 2010
7750392 Embedded cache memory in image sensors Jul. 6, 2010
7705368 Insulated gate type thyristor Apr. 27, 2010
7576399 Semiconductor device and method of manufacture thereof Aug. 18, 2009
7462899 Semiconductor memory device having local etch stopper and method of manufacturing the same Dec. 9, 2008
7075126 Transistor structure with minimized parasitics and method of fabricating the same Jul. 11, 2006
6967358 Thyristor-type memory device Nov. 22, 2005
6727529 Semiconductor capacitively-coupled NDR device and related applications in high-density high-speed memories and in power switches Apr. 27, 2004
6690038 Thyristor-based device over substrate surface Feb. 10, 2004
6657239 Power-switching semiconductor device Dec. 2, 2003
6653174 Thyristor-based device over substrate surface Nov. 25, 2003
6583452 Thyristor-based device having extended capacitive coupling Jun. 24, 2003
6528356 Manufacture of semiconductor capacitively-coupled NDR device for applications such as high-density high-speed memories and power switches Mar. 4, 2003
6448586 Semiconductor current-switching device having operational enhancer and method therefor Sep. 10, 2002
6373098 Trench-gated device having trench walls formed by selective epitaxial growth and process for forming device Apr. 16, 2002
6259134 Trench thyristor with improved breakdown voltage characteristics Jul. 10, 2001
6236069 Insulated-gate thyristor May. 22, 2001
5793065 Insulated-gate thyristor Aug. 11, 1998
5777346 Metal oxide semiconductor controlled thyristor with an on-field effect transistor in a trench Jul. 7, 1998
5464994 Insulated-gate thyristor Nov. 7, 1995
5387806 GTO-thyristor Feb. 7, 1995
5381026 Insulated-gate thyristor Jan. 10, 1995
5365086 Thyristors having a common cathode Nov. 15, 1994
5324967 Turn off type semiconductor device, method of producing the same and the power conversion apparatus employing the same Jun. 28, 1994
5153695 Semiconductor gate-controlled high-power capability bipolar device Oct. 6, 1992
5021855 Gate turn-off thyristor Jun. 4, 1991
4963972 Gate turn-off thyristor with switching control field effect transistor Oct. 16, 1990
4843449 Controllable power semiconductor Jun. 27, 1989
4792838 Gate turn-off thyristor Dec. 20, 1988
4791470 Reverse conducting gate turn-off thyristor device Dec. 13, 1988
4651189 Semiconductor device provided with electrically floating control electrode Mar. 17, 1987
4646122 Semiconductor device with floating remote gate turn-off means Feb. 24, 1987
4636830 Insulated gate-controlled thyristor having shorted anode Jan. 13, 1987
4635086 Self turnoff type semiconductor switching device Jan. 6, 1987
4630092 Insulated gate-controlled thyristor Dec. 16, 1986
4626888 Gate turn-off thyristor Dec. 2, 1986
4618877 Power semiconductor device with mesa type structure Oct. 21, 1986
4611235 Thyristor with turn-off FET Sep. 9, 1986
4542398 Semiconductor devices of multi-emitter type Sep. 17, 1985
4529999 Gate controlled switch Jul. 16, 1985

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