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Class Information
Number: 257/E29.124
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrodes (epo) > Characterized by their shape, relative sizes or dispositions (epo) > Not carrying current to be rectified, amplified, or switched (epo) > Base electrodes for bipolar transistors (epo)
Description: This subclass is indented under subclass E29.123. This subclass is substantially the same in scope as ECLA classification H01L29/423B.










Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8384154 Bidirectional power switch controllable to be turned on and off Feb. 26, 2013
8232156 Vertical heterojunction bipolar transistors with reduced base-collector junction capacitance Jul. 31, 2012
7772079 Vertical organic transistor Aug. 10, 2010
7696078 Method for producing an electrical contact for an optoelectronic semiconductor chip Apr. 13, 2010
7692269 Vertical organic transistor Apr. 6, 2010
7442616 Method of manufacturing a bipolar transistor and bipolar transistor thereof Oct. 28, 2008
7141865 Low noise semiconductor amplifier Nov. 28, 2006
7091100 Polysilicon bipolar transistor and method of manufacturing it Aug. 15, 2006
7067857 Semiconductor device having led out conductor layers, manufacturing method of the same, and semiconductor module Jun. 27, 2006
7045845 Self-aligned vertical gate semiconductor device May. 16, 2006
7029981 Radiation hardened bipolar junction transistor Apr. 18, 2006
7005359 Bipolar junction transistor with improved extrinsic base region and method of fabrication Feb. 28, 2006
6998699 Redundant interconnect high current bipolar device and method of forming the device Feb. 14, 2006
6979884 Bipolar transistor having self-aligned silicide and a self-aligned emitter contact border Dec. 27, 2005
6943387 Semiconductor device, manufacturing thereof and power amplifier module Sep. 13, 2005
6940357 Bipolar transistor, for voltage controlled oscillator using a capacitance adjustment line Sep. 6, 2005
6927428 Lateral heterojunction bipolar transistor Aug. 9, 2005
6924203 Double HBT base metal micro-bridge Aug. 2, 2005
6897547 Semiconductor device including bipolar junction transistor, and production method therefor May. 24, 2005
6890826 Method of making bipolar transistor with integrated base contact and field plate May. 10, 2005
6870184 Mechanically-stable BJT with reduced base-collector capacitance Mar. 22, 2005
6858887 BJT device configuration and fabrication method with reduced emitter width Feb. 22, 2005
6825508 Heterojunction bipolar transistor and production process therefor Nov. 30, 2004
6794237 Lateral heterojunction bipolar transistor Sep. 21, 2004
6730986 Bipolar junction transistors having trench-based base electrodes May. 4, 2004
6657242 Trench-isolated bipolar devices Dec. 2, 2003
6657280 Redundant interconnect high current bipolar device Dec. 2, 2003
6614073 SEMICONDUCTOR CHIP WITH A BASE ELECTRODE AND AN EMITTER ELECTRODE EXPOSED ON ONE OF A PAIR OF OPPOSITE LATERAL FACES AND A COLLECTOR ELECTRODE EXPOSED ON A REMAINING ONE OF THE PAIR OF THE OPP Sep. 2, 2003
6611043 Bipolar transistor and semiconductor device having the same Aug. 26, 2003
6600179 Power amplifier with base and collector straps Jul. 29, 2003
6577200 High-frequency semiconductor device Jun. 10, 2003
6495869 Method of manufacturing a double-heterojunction bipolar transistor on III-V material Dec. 17, 2002
6476452 Bipolar/BiCMOS semiconductor device Nov. 5, 2002
6461927 Semiconductor device and method of producing the same Oct. 8, 2002
6437376 Heterojunction bipolar transistor (HBT) with three-dimensional base contact Aug. 20, 2002
6399999 Semiconductor device with extra control wiring for improving breakdown voltage Jun. 4, 2002
6355972 Semiconductor device and method of manufacturing same Mar. 12, 2002
6297700 RF power transistor having cascaded cells with phase matching between cells Oct. 2, 2001
6292390 Semiconductor device Sep. 18, 2001
6287930 Methods of forming bipolar junction transistors having trench-based base electrodes Sep. 11, 2001
6255184 Fabrication process for a three dimensional trench emitter bipolar transistor Jul. 3, 2001
6255716 Bipolar junction transistors having base electrode extensions Jul. 3, 2001
6232822 Semiconductor device including a bipolar transistor biased to produce a negative base current by the impact ionization mechanism May. 15, 2001
6121102 Method of electrical connection through an isolation trench to form trench-isolated bipolar devices Sep. 19, 2000
6114744 Semiconductor integration device and fabrication method of the same Sep. 5, 2000
6051872 Semiconductor integration device and fabrication method of the same Apr. 18, 2000
6048773 Methods of forming bipolar junction transistors having preferred base electrode extensions and transistors formed thereby Apr. 11, 2000
6020250 Stacked devices Feb. 1, 2000
5986325 Microwave integrated circuit device Nov. 16, 1999
5986323 High-frequency bipolar transistor structure Nov. 16, 1999

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