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Class Information
Number: 257/E29.123
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrodes (epo) > Characterized by their shape, relative sizes or dispositions (epo) > Not carrying current to be rectified, amplified, or switched (epo)
Description: This subclass is indented under subclass E29.112. This subclass is substantially the same in scope as ECLA classification H01L29/423.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.124 Base electrodes for bipolar transistors (epo) 152
257/E29.125 Gate electrodes for thyristors (epo) 71
257/E29.126 Gate stack for field-effect devices (epo) 58


Patents under this class:

Patent Number Title Of Patent Date Issued
8390124 Semiconductor device and method of manufacturing semiconductor device including wiring via and switch via for connecting first and second wirings Mar. 5, 2013
8227894 Stepwise capacitor structure and substrate employing the same Jul. 24, 2012
8222704 Compact electrical switching devices with nanotube elements, and methods of making same Jul. 17, 2012
7763929 Nonvolatile semiconductor memory device comprising shield electrode on source and method for manufacturing the same Jul. 27, 2010
7750365 Insulated gate bipolar transistor with built-in freewheeling diode Jul. 6, 2010
7750428 Semiconductor device and method for producing it Jul. 6, 2010
7723820 Transistor based antifuse with integrated heating element May. 25, 2010
7659158 Atomic layer deposition processes for non-volatile memory devices Feb. 9, 2010
7612391 Semiconductor integrated circuit device Nov. 3, 2009
7344965 Method of etching dual pre-doped polysilicon gate stacks using carbon-containing gaseous additions Mar. 18, 2008
6699740 Method for manufacturing a lateral double-diffused MOS transistor having stable characteristics and equal drift length Mar. 2, 2004
6576936 Bipolar transistor with an insulated gate electrode Jun. 10, 2003
6201258 Hot carrier transistors utilizing quantum well injector for high current gain Mar. 13, 2001
5977588 Radio frequency power MOSFET device having improved performance characteristics Nov. 2, 1999
5841166 Lateral DMOS transistor for RF/microwave applications Nov. 24, 1998
5821144 Lateral DMOS transistor for RF/microwave applications Oct. 13, 1998
5119159 Lateral DMOSFET semiconductor device with reduced on resistance and device area Jun. 2, 1992
4091409 Semiconductor device having symmetrical current distribution May. 23, 1978
3975758 Gate assist turn-off, amplifying gate thyristor and a package assembly therefor Aug. 17, 1976











 
 
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