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Class Information
Number: 257/E29.123
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrodes (epo) > Characterized by their shape, relative sizes or dispositions (epo) > Not carrying current to be rectified, amplified, or switched (epo)
Description: This subclass is indented under subclass E29.112. This subclass is substantially the same in scope as ECLA classification H01L29/423.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7344965 |
Method of etching dual pre-doped polysilicon gate stacks using carbon-containing gaseous additions |
Mar. 18, 2008 |
| 6699740 |
Method for manufacturing a lateral double-diffused MOS transistor having stable characteristics and equal drift length |
Mar. 2, 2004 |
| 6576936 |
Bipolar transistor with an insulated gate electrode |
Jun. 10, 2003 |
| 6201258 |
Hot carrier transistors utilizing quantum well injector for high current gain |
Mar. 13, 2001 |
| 5977588 |
Radio frequency power MOSFET device having improved performance characteristics |
Nov. 2, 1999 |
| 5841166 |
Lateral DMOS transistor for RF/microwave applications |
Nov. 24, 1998 |
| 5821144 |
Lateral DMOS transistor for RF/microwave applications |
Oct. 13, 1998 |
| 5119159 |
Lateral DMOSFET semiconductor device with reduced on resistance and device area |
Jun. 2, 1992 |
| 4091409 |
Semiconductor device having symmetrical current distribution |
May. 23, 1978 |
| 3975758 |
Gate assist turn-off, amplifying gate thyristor and a package assembly therefor |
Aug. 17, 1976 |
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