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Class Information
Number: 257/E29.118
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrodes (epo) > Characterized by their shape, relative sizes or dispositions (epo) > Carrying current to be rectified, amplified or switched (epo) > Source or drain electrodes for field-effect devices (epo) > For vertical current flow (epo)
Description: This subclass is indented under subclass E29.116. This subclass is substantially the same in scope as ECLA classification H01L29/417D4.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7439595 |
Field effect transistor having vertical channel structure |
Oct. 21, 2008 |
| 7397126 |
Semiconductor device |
Jul. 8, 2008 |
| 7365363 |
Silicon carbide semiconductor device and method for manufacturing the same |
Apr. 29, 2008 |
| 7323388 |
SONOS memory cells and arrays and method of forming the same |
Jan. 29, 2008 |
| 7067870 |
Power semiconductor switching element |
Jun. 27, 2006 |
| 7064033 |
Semiconductor device and method of manufacturing same |
Jun. 20, 2006 |
| 7049194 |
Trench DMOS device with improved drain contact |
May. 23, 2006 |
| 7049656 |
Field-effect-controllable semiconductor configuration with a laterally extending channel zone |
May. 23, 2006 |
| 7041559 |
Methods of forming power semiconductor devices having laterally extending base shielding regions |
May. 9, 2006 |
| 7030447 |
Low voltage transient voltage suppressor |
Apr. 18, 2006 |
| 6987299 |
High-voltage lateral transistor with a multi-layered extended drain structure |
Jan. 17, 2006 |
| 6975004 |
Semiconductor component with optimized current density |
Dec. 13, 2005 |
| 6958275 |
MOSFET power transistors and methods |
Oct. 25, 2005 |
| 6953968 |
High voltage withstanding semiconductor device |
Oct. 11, 2005 |
| 6949432 |
Trench DMOS transistor structure having a low resistance path to a drain contact located on an upper surface |
Sep. 27, 2005 |
| 6949434 |
Method of manufacturing a vertical semiconductor device |
Sep. 27, 2005 |
| 6940144 |
Semiconductor equipment |
Sep. 6, 2005 |
| 6930355 |
Silicided trench gate power mosfets ultrasonically bonded to a surface source electrode |
Aug. 16, 2005 |
| 6929988 |
Method of making an ultra dense trench-gated power device with the reduced drain-source feedback capacitance and miller charge |
Aug. 16, 2005 |
| 6927451 |
Termination for trench MIS device having implanted drain-drift region |
Aug. 9, 2005 |
| 6921939 |
Power MOSFET and method for forming same using a self-aligned body implant |
Jul. 26, 2005 |
| 6903417 |
Power semiconductor device |
Jun. 7, 2005 |
| 6891249 |
Method and system for high density integrated bipolar power transistor using buried power buss |
May. 10, 2005 |
| 6882004 |
Semiconductor component, trench structure transistor, trench MOSFET, IGBT, and field-plate transistor |
Apr. 19, 2005 |
| 6882005 |
High-voltage vertical transistor with a multi-layered extended drain structure |
Apr. 19, 2005 |
| 6872611 |
Method of manufacturing transistor |
Mar. 29, 2005 |
| 6853033 |
Power MOSFET having enhanced breakdown voltage |
Feb. 8, 2005 |
| 6838346 |
Method of fabricating a high-voltage transistor with a multi-layered extended drain structure |
Jan. 4, 2005 |
| 6818945 |
Semiconductor device |
Nov. 16, 2004 |
| 6815769 |
Power semiconductor component, IGBT and field-effect transistor |
Nov. 9, 2004 |
| 6815293 |
High-voltage lateral transistor with a multi-layered extended drain structure |
Nov. 9, 2004 |
| 6812526 |
Trench DMOS transistor structure having a low resistance path to a drain contact located on an upper surface |
Nov. 2, 2004 |
| 6803629 |
Vertical field-effect transistor with compensation zones and terminals at one side of a semiconductor body |
Oct. 12, 2004 |
| 6800897 |
Integrated circuit power devices having junction barrier controlled schottky diodes therein |
Oct. 5, 2004 |
| 6800509 |
Process for enhancement of voltage endurance and reduction of parasitic capacitance for a trench power MOSFET |
Oct. 5, 2004 |
| 6798020 |
High-voltage lateral transistor with a multi-layered extended drain structure |
Sep. 28, 2004 |
| 6791143 |
Power semiconductor devices having laterally extending base shielding regions that inhibit base reach-through |
Sep. 14, 2004 |
| 6787847 |
High-voltage vertical transistor with a multi-layered extended drain structure |
Sep. 7, 2004 |
| 6784486 |
Vertical power devices having retrograded-doped transition regions therein |
Aug. 31, 2004 |
| 6781198 |
High-voltage vertical transistor with a multi-layered extended drain structure |
Aug. 24, 2004 |
| 6781194 |
Vertical power devices having retrograded-doped transition regions and insulated trench-based electrodes therein |
Aug. 24, 2004 |
| 6764889 |
Methods of forming vertical mosfets having trench-based gate electrodes within deeper trench-based source electrodes |
Jul. 20, 2004 |
| 6765262 |
Vertical high-voltage semiconductor component |
Jul. 20, 2004 |
| 6750105 |
Method of fabricating a high-voltage transistor with a multi-layered extended drain structure |
Jun. 15, 2004 |
| 6750508 |
Power semiconductor switching element provided with buried electrode |
Jun. 15, 2004 |
| 6737704 |
Transistor and method of manufacturing the same |
May. 18, 2004 |
| 6710403 |
Dual trench power MOSFET |
Mar. 23, 2004 |
| 6696323 |
Method of manufacturing semiconductor device having trench filled up with gate electrode |
Feb. 24, 2004 |
| 6693024 |
Semiconductor component with a semiconductor body having a multiplicity of pores and method for fabricating |
Feb. 17, 2004 |
| 6690062 |
Transistor configuration with a shielding electrode outside an active cell array and a reduced gate-drain capacitance |
Feb. 10, 2004 |
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