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Class Information
Number: 257/E29.115
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrodes (epo) > Characterized by their shape, relative sizes or dispositions (epo) > Carrying current to be rectified, amplified or switched (epo) > Cathode or anode electrodes for thyristors (epo)
Description: This subclass is indented under subclass E29.113. This subclass is substantially the same in scope as ECLA classification H01L29/417C.










Patents under this class:
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Patent Number Title Of Patent Date Issued
7968402 Method for forming a high-performance one-transistor memory cell Jun. 28, 2011
7897440 Vertical thyristor-based memory with trench isolation and method of fabrication thereof Mar. 1, 2011
7705368 Insulated gate type thyristor Apr. 27, 2010
7615801 High voltage silicon carbide devices having bi-directional blocking capabilities Nov. 10, 2009
7323763 Semiconductor device having an improved voltage controlled oscillator Jan. 29, 2008
7259029 Method of forming protective structure for active matrix triode field emission device Aug. 21, 2007
7049182 Shunt connection to the emitter of a thyristor May. 23, 2006
6967358 Thyristor-type memory device Nov. 22, 2005
6933541 Emitter turn-off thyristors (ETO) Aug. 23, 2005
6930333 Semiconductor device wiring structure Aug. 16, 2005
6888177 Increased base-emitter capacitance May. 3, 2005
6888176 Thyrister semiconductor device May. 3, 2005
6872602 Carrier coupler for thyristor-based semiconductor device Mar. 29, 2005
6864515 Pressure contact type semiconductor device having dummy segment Mar. 8, 2005
6818482 Method for trench isolation for thyristor-based device Nov. 16, 2004
6756612 Carrier coupler for thyristor-based semiconductor device Jun. 29, 2004
6750506 High-voltage semiconductor device Jun. 15, 2004
6727529 Semiconductor capacitively-coupled NDR device and related applications in high-density high-speed memories and in power switches Apr. 27, 2004
6710639 Emitter turn-off thyristors and their drive circuits Mar. 23, 2004
6690038 Thyristor-based device over substrate surface Feb. 10, 2004
6666481 Shunt connection to emitter Dec. 23, 2003
6657239 Power-switching semiconductor device Dec. 2, 2003
6653174 Thyristor-based device over substrate surface Nov. 25, 2003
6630711 Semiconductor structures with trench contacts Oct. 7, 2003
6611006 Vertical component peripheral structure Aug. 26, 2003
6555849 Deactivatable thyristor Apr. 29, 2003
6528356 Manufacture of semiconductor capacitively-coupled NDR device for applications such as high-density high-speed memories and power switches Mar. 4, 2003
6448589 Single side contacts for a semiconductor device Sep. 10, 2002
6448586 Semiconductor current-switching device having operational enhancer and method therefor Sep. 10, 2002
6437399 Semiconductor structures with trench contacts Aug. 20, 2002
6037628 Semiconductor structures with trench contacts Mar. 14, 2000
5795793 Process for manufacture of MOS gated device with reduced mask count Aug. 18, 1998
5731604 Semiconductor device MOS gated Mar. 24, 1998
5578522 Semiconductor device and method of fabricating same Nov. 26, 1996
5574297 Gate turnoff thyristor with reduced gate trigger current Nov. 12, 1996
5508534 Trench gate type insulated gate bipolar transistor Apr. 16, 1996
5387806 GTO-thyristor Feb. 7, 1995
5343052 Lateral insulated gate bipolar transistor Aug. 30, 1994
5153695 Semiconductor gate-controlled high-power capability bipolar device Oct. 6, 1992
5060032 Insulated gate transistor operable at a low-drain-source voltage Oct. 22, 1991
5017992 High blocking-capacity semiconductor component May. 21, 1991
4989058 Fast switching lateral insulated gate transistors Jan. 29, 1991
4984048 Semiconductor device with buried side contact Jan. 8, 1991
4942444 Thyristor Jul. 17, 1990
4868636 Power thyristor Sep. 19, 1989
4862239 Power semiconductor component Aug. 29, 1989
4827321 Metal oxide semiconductor gated turn off thyristor including a schottky contact May. 2, 1989
4803538 Thyristor with adjustable base-to-emitter resistance Feb. 7, 1989
4783690 Power semiconductor device with main current section and emulation current section Nov. 8, 1988
4760438 Thyristor emitter short configuration Jul. 26, 1988

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