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Class Information
Number: 257/E29.114
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrodes (epo) > Characterized by their shape, relative sizes or dispositions (epo) > Carrying current to be rectified, amplified or switched (epo) > Emitter or collector electrodes for bipolar transistors (epo)
Description: This subclass is indented under subclass E29.113. This subclass is substantially the same in scope as ECLA classification H01L29/417B.


Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
7432169 Method for manufacturing semiconductor device Oct. 7, 2008
7329940 Semiconductor structure and method of manufacture Feb. 12, 2008
7323763 Semiconductor device having an improved voltage controlled oscillator Jan. 29, 2008
7208387 Method for manufacturing compound semiconductor wafer and compound semiconductor device Apr. 24, 2007
7071500 Semiconductor device and manufacturing method for the same Jul. 4, 2006
7067857 Semiconductor device having led out conductor layers, manufacturing method of the same, and semiconductor module Jun. 27, 2006
7038255 Integrated circuit arrangement having PNP and NPN bipolar transistors, and fabrication method May. 2, 2006
7022578 Heterojunction bipolar transistor using reverse emitter window Apr. 4, 2006
7013123 Wireless communication system Mar. 14, 2006
7005723 Bipolar transistor and method of producing same Feb. 28, 2006
6998699 Redundant interconnect high current bipolar device and method of forming the device Feb. 14, 2006
6984871 Semiconductor device with high structural reliability and low parasitic capacitance Jan. 10, 2006
6979884 Bipolar transistor having self-aligned silicide and a self-aligned emitter contact border Dec. 27, 2005
6949437 Manufacturing method of semiconductor device including an anisotropic etching step Sep. 27, 2005
6940357 Bipolar transistor, for voltage controlled oscillator using a capacitance adjustment line Sep. 6, 2005
6897547 Semiconductor device including bipolar junction transistor, and production method therefor May. 24, 2005
6893933 Bipolar transistors with low-resistance emitter contacts May. 17, 2005
6891249 Method and system for high density integrated bipolar power transistor using buried power buss May. 10, 2005
6858887 BJT device configuration and fabrication method with reduced emitter width Feb. 22, 2005
6853048 Bipolar transistor having an isolation structure located under the base, emitter and collector and a method of manufacture thereof Feb. 8, 2005
6844575 Heterojunction bipolar transistor and method for fabricating the same Jan. 18, 2005
6818492 Semiconductor device and manufacturing method thereof Nov. 16, 2004
6815303 Bipolar transistors with low-resistance emitter contacts Nov. 9, 2004
6806159 Method for manufacturing a semiconductor device with sinker contact region Oct. 19, 2004
6803317 Method of making a vertical gate semiconductor device Oct. 12, 2004
6774455 Semiconductor device with a collector contact in a depressed well-region Aug. 10, 2004
6753592 Multi-technology complementary bipolar output using polysilicon emitter and buried power buss with low temperature processing Jun. 22, 2004
6730981 Bipolar transistor with inclined epitaxial layer May. 4, 2004
6724067 Low stress thermal and electrical interconnects for heterojunction bipolar transistors Apr. 20, 2004
6686251 Method for fabricating a bipolar transistor having self-aligned emitter and base Feb. 3, 2004
6667202 Semiconductor device and method for making the same Dec. 23, 2003
6657242 Trench-isolated bipolar devices Dec. 2, 2003
6657280 Redundant interconnect high current bipolar device Dec. 2, 2003
6633075 Heterojunction bipolar transistor and method for fabricating the same Oct. 14, 2003
6633069 Semiconductor device Oct. 14, 2003
6630409 Method of forming a polycide electrode in a semiconductor device Oct. 7, 2003
6614073 SEMICONDUCTOR CHIP WITH A BASE ELECTRODE AND AN EMITTER ELECTRODE EXPOSED ON ONE OF A PAIR OF OPPOSITE LATERAL FACES AND A COLLECTOR ELECTRODE EXPOSED ON A REMAINING ONE OF THE PAIR OF THE OPP Sep. 2, 2003
6600179 Power amplifier with base and collector straps Jul. 29, 2003
6577200 High-frequency semiconductor device Jun. 10, 2003
6566733 Method and system for providing a power lateral PNP transistor using a buried power buss May. 20, 2003
6544830 Method of manufacturing a semiconductor device with multiple emitter contact plugs Apr. 8, 2003
6504232 Integrated circuit components thereof and manufacturing method Jan. 7, 2003
6504231 Bipolar transistor in which impurities are introduced from emitter electrode material to form emitter region Jan. 7, 2003
6476452 Bipolar/BiCMOS semiconductor device Nov. 5, 2002
6461927 Semiconductor device and method of producing the same Oct. 8, 2002
6406972 Integrated circuit, components thereof and manufacturing method Jun. 18, 2002
6399999 Semiconductor device with extra control wiring for improving breakdown voltage Jun. 4, 2002
6396110 Semiconductor device with multiple emitter contact plugs May. 28, 2002
6395608 Heterojunction bipolar transistor and its fabrication method May. 28, 2002
6380017 Polysilicon-edge, base-emitter super self-aligned, low-power, high-frequency bipolar transistor and method of forming the transistor Apr. 30, 2002

1 2 3 4


 
 
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