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Browse by Category: Main > Physics
Class Information
Number: 257/E29.11
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by concentration or distribution of impurities in bulk material (epo) > Planar doping (e.g., atomic-plane doping, delta-doping) (epo)
Description: This subclass is indented under subclass E29.109. This subclass is substantially the same in scope as ECLA classification H01L29/36D.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8598653 FinFET having cross-hair cells Dec. 3, 2013
8558234 Low voltage low light imager and photodetector Oct. 15, 2013
8519437 Polarization doping in nitride based diodes Aug. 27, 2013
8487344 Optical device and method of fabricating the same Jul. 16, 2013
8384130 Nitride semiconductor device having a two-dimensional electron gas (2DEG) channel Feb. 26, 2013
8283650 Flat lower bottom electrode for phase change memory cell Oct. 9, 2012
8264004 Mechanism for forming a remote delta doping layer of a quantum well structure Sep. 11, 2012
8253220 Nitride semiconductor device and method for fabricating the same Aug. 28, 2012
8242495 Digital X-ray detecting panel and method for manufacturing the same Aug. 14, 2012
7847315 High efficiency rectifier Dec. 7, 2010
7649243 Semiconductor structures incorporating multiple crystallographic planes and methods for fabrication thereof Jan. 19, 2010
7429747 Sb-based CMOS devices Sep. 30, 2008
7388289 Local multilayered metallization Jun. 17, 2008
6995396 Semiconductor substrate, semiconductor device and method for fabricating the same Feb. 7, 2006
6995397 Semiconductor device Feb. 7, 2006
6989553 Semiconductor device having an active region of alternating layers Jan. 24, 2006
6940127 Equipment for communication system and semiconductor integrated circuit device Sep. 6, 2005
6906350 Delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure Jun. 14, 2005
6902964 Methods of fabricating delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure Jun. 7, 2005
6864507 MISFET Mar. 8, 2005
6828605 Field-effect-controlled semiconductor component and method of fabricating a doping layer in a vertically configured semiconductor component Dec. 7, 2004
6797996 Compound semiconductor device and method for fabricating the same Sep. 28, 2004
6753230 Method for fabricating semiconductor device with ultra-shallow super-steep-retrograde epi-channel by decaborane doping Jun. 22, 2004
6744078 Heterojunction structure with a charge compensation layer formed between two group III-V semiconductor layers Jun. 1, 2004
6690035 Semiconductor device having an active region of alternating layers Feb. 10, 2004
6674131 Semiconductor power device for high-temperature applications Jan. 6, 2004
6667200 Method for forming transistor of semiconductor device Dec. 23, 2003
6654604 Equipment for communication system Nov. 25, 2003
6617653 MISFET Sep. 9, 2003
6580125 Semiconductor device and method for fabricating the same Jun. 17, 2003
6440800 Method to form a vertical transistor by selective epitaxial growth and delta doped silicon layers Aug. 27, 2002
6403454 Silicon semiconductor devices with .delta.-doped layers Jun. 11, 2002
6306211 Method for growing semiconductor film and method for fabricating semiconductor device Oct. 23, 2001
5834792 Articles comprising doped semiconductor material Nov. 10, 1998
5532505 Field effect transistor including a cap with a doped layer formed therein Jul. 2, 1996
5493136 Field effect transistor and method of manufacturing the same Feb. 20, 1996
5412231 Semiconductor device having organically doped structure May. 2, 1995
5408111 Field-effect transistor having a double pulse-doped structure Apr. 18, 1995
5373186 Bipolar transistor with monoatomic base layer between emitter and collector layers Dec. 13, 1994
5367183 Semiconductor device with complementary transistors Nov. 22, 1994
5343056 Compound semiconductor device Aug. 30, 1994
5329150 Semiconductor photodetector devices with pairs of monoatomic layers separated by intrinsic layers Jul. 12, 1994
5314547 Rare earth slab doping of group III-V compounds May. 24, 1994
5311045 Field effect devices with ultra-short gates May. 10, 1994
5284782 Process for formation of delta-doped quantum well field effect transistor Feb. 8, 1994
5216260 Optically bistable semiconductor device with pairs of monoatomic layers separated by intrinsic layers Jun. 1, 1993
5206527 Field effect transistor Apr. 27, 1993
5060234 Injection laser with at least one pair of monoatomic layers of doping atoms Oct. 22, 1991
5023674 Field effect transistor Jun. 11, 1991
5013685 Method of making a non-alloyed ohmic contact to III-V semiconductors-on-silicon May. 7, 1991

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