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Class Information
Number: 257/E29.109
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by concentration or distribution of impurities in bulk material (epo)
Description: This subclass is indented under subclass E29.002. This subclass is substantially the same in scope as ECLA classification H01L29/36.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.11 Planar doping (e.g., atomic-plane doping, delta-doping) (epo) 71


Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8674358 Radiation detecting element and radiation detecting device Mar. 18, 2014
8659151 Semiconductor device and manufacturing method thereof Feb. 25, 2014
8575661 Solid-state image pick-up device and manufacturing method thereof, image-pickup apparatus, semiconductor device and manufacturing method thereof, and semiconductor substrate Nov. 5, 2013
8507998 Semiconductor device Aug. 13, 2013
8492844 Fully depleted SOI device with buried doped layer Jul. 23, 2013
8492772 Homoepitaxial growth of SiC on low off-axis SiC wafers Jul. 23, 2013
8426927 Penetrating implant for forming a semiconductor device Apr. 23, 2013
8420514 Epitaxial silicon wafer and method for manufacturing same Apr. 16, 2013
8357590 Method for producing semiconductor wafers composed of silicon having a diameter of at least 450 mm, and semiconductor wafer composed of silicon having a diameter of 450 mm Jan. 22, 2013
8350366 Power semiconductor element with two-stage impurity concentration profile Jan. 8, 2013
8158965 Heating center PCRAM structure and methods for making Apr. 17, 2012
8110897 Semiconductor device with carbon-containing region Feb. 7, 2012
8093684 Iron sulfide semiconductor doped with Mg or Zn, junction devices and photoelectric converter comprising same Jan. 10, 2012
8030183 Method for reducing crystal defect of SIMOX wafer and SIMOX wafer Oct. 4, 2011
8013343 Silicon carbide single crystal, silicon carbide substrate and manufacturing method for silicon carbide single crystal Sep. 6, 2011
7943957 Lateral SOI semiconductor devices and manufacturing method thereof May. 17, 2011
7843018 Transistor providing different threshold voltages and method of fabrication thereof Nov. 30, 2010
7675135 Integrated high voltage power device having an edge termination of enhanced effectiveness Mar. 9, 2010
7662705 Partial implantation method for semiconductor manufacturing Feb. 16, 2010
7615471 Method for producing a tensioned layer on a substrate, and a layer structure Nov. 10, 2009
7602015 Process to control semiconductor wafer yield Oct. 13, 2009
7411209 Field-effect transistor and method for manufacturing the same Aug. 12, 2008
7397110 High resistance silicon wafer and its manufacturing method Jul. 8, 2008
7352008 Heterostructure with rear-face donor doping Apr. 1, 2008
7229891 Fabrication method for silicon-on defect layer in field-effect and bipolar transistor devices Jun. 12, 2007
7067855 Semiconductor structure having an abrupt doping profile Jun. 27, 2006
7064399 Advanced CMOS using super steep retrograde wells Jun. 20, 2006
7023072 Bipolar transistor Apr. 4, 2006
7015546 Deterministically doped field-effect devices and methods of making same Mar. 21, 2006
6939772 Bipolar transistor and fabrication method thereof Sep. 6, 2005
6888226 Semiconductor structure and method for improving its ability to withstand electrostatic discharge (ESD) and overloads May. 3, 2005
6838329 High concentration indium fluorine retrograde wells Jan. 4, 2005
6831292 Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same Dec. 14, 2004
6828602 Bipolar transistor and method manufacture thereof Dec. 7, 2004
6825110 Method for fabricating semiconductor component with an optimized thickness Nov. 30, 2004
6777747 Thick buffer region design to improve IGBT self-clamped inductive switching (SCIS) energy density and device manufacturability Aug. 17, 2004
6737722 Lateral transistor having graded base region, semiconductor integrated circuit and fabrication method thereof May. 18, 2004
6723621 Abrupt delta-like doping in Si and SiGe films by UHV-CVD Apr. 20, 2004
6649981 High breakdown voltage semiconductor device Nov. 18, 2003
6614089 Field effect transistor Sep. 2, 2003
6506656 Stepped collector implant and method for fabrication Jan. 14, 2003
6469348 Nonvolatile semiconductor memory device Oct. 22, 2002
6369434 Nitrogen co-implantation to form shallow junction-extensions of p-type metal oxide semiconductor field effect transistors Apr. 9, 2002
6362510 Semiconductor topography having improved active device isolation and reduced dopant migration Mar. 26, 2002
6346452 Method for controlling an N-type dopant concentration depth profile in bipolar transistor epitaxial layers Feb. 12, 2002
6329257 Method for laterally peaked source doping profiles for better erase control in flash memory devices Dec. 11, 2001
6292390 Semiconductor device Sep. 18, 2001
6285056 Conductivity enhanced MOS-gated semiconductor devices Sep. 4, 2001
6255693 Ion implantation with programmable energy, angle, and beam current Jul. 3, 2001
6232822 Semiconductor device including a bipolar transistor biased to produce a negative base current by the impact ionization mechanism May. 15, 2001

1 2 3 4










 
 
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