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Class Information
Number: 257/E29.107
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by physical imperfections; having polished or roughened surface (epo) > Imperfections within semiconductor body (epo)
Description: This subclass is indented under subclass E29.106. This subclass is substantially the same in scope as ECLA classification H01L29/32.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7615471 |
Method for producing a tensioned layer on a substrate, and a layer structure |
Nov. 10, 2009 |
| 7323391 |
Substrate having silicon germanium material and stressed silicon nitride layer |
Jan. 29, 2008 |
| 7199404 |
Semiconductor substrate and semiconductor device using the same |
Apr. 3, 2007 |
| 7015562 |
High-voltage diode |
Mar. 21, 2006 |
| 6972459 |
Metal oxide semiconductor transistor having a nitrogen cluster containing layer embedded in the substrate |
Dec. 6, 2005 |
| 6927141 |
Process for forming fast recovery diode with a single large area P/N junction |
Aug. 9, 2005 |
| 6894366 |
Bipolar junction transistor with a counterdoped collector region |
May. 17, 2005 |
| 6888211 |
High-voltage diode |
May. 3, 2005 |
| 6870199 |
Semiconductor device having an electrode overlaps a short carrier lifetime region |
Mar. 22, 2005 |
| 6838729 |
Semiconductor component with enhanced avalanche ruggedness |
Jan. 4, 2005 |
| 6838321 |
SEMICONDUCTOR SUBSTRATE WITH DEFECTS REDUCED OR REMOVED AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE CAPABLE OF BIDIRECTIONALLY RETAINING BREAKDOWN VOLTAGE AND METHOD OF MANU |
Jan. 4, 2005 |
| 6828690 |
Non-uniform minority carrier lifetime distributions in high performance silicon power devices |
Dec. 7, 2004 |
| 6815793 |
Body of a semiconductor material with a reduced mean free path length |
Nov. 9, 2004 |
| 6815741 |
III-V single crystal as well as method of producing the same, and semiconductor device utilizing the III-V single crystal |
Nov. 9, 2004 |
| 6784488 |
Trench-gate semiconductor devices and the manufacture thereof |
Aug. 31, 2004 |
| 6781156 |
Recombination center diffusion controlled by carbon concentration |
Aug. 24, 2004 |
| 6774407 |
Semiconductor device with a suppressed increase in turned-on resistance and an improved turn-off response |
Aug. 10, 2004 |
| 6762097 |
Semiconductor device and method for manufacturing the same |
Jul. 13, 2004 |
| 6759301 |
Semiconductor device and method for manufacturing the same |
Jul. 6, 2004 |
| 6723586 |
Thyristor provided with integrated circuit-commutated recovery time protection and production method therefor |
Apr. 20, 2004 |
| 6709914 |
Manufacturing process of pn junction diode device and pn junction diode device |
Mar. 23, 2004 |
| 6707111 |
Hydrogen implant for buffer zone of punch-through non EPI IGBT |
Mar. 16, 2004 |
| 6664590 |
Circuit configuration for load-relieved switching |
Dec. 16, 2003 |
| 6630697 |
GaAs single crystal as well as method of producing the same, and semiconductor device utilizing the GaAs single crystal |
Oct. 7, 2003 |
| 6610572 |
Semiconductor device and method for manufacturing the same |
Aug. 26, 2003 |
| 6603189 |
Semiconductor device with deliberately damaged layer having a shorter carrier lifetime therein |
Aug. 5, 2003 |
| 6489187 |
Method for setting the breakover voltage of a thyristor |
Dec. 3, 2002 |
| 6482681 |
Hydrogen implant for buffer zone of punch-through non epi IGBT |
Nov. 19, 2002 |
| 6483134 |
Integrated circuits with immunity to single event effects |
Nov. 19, 2002 |
| 6475926 |
Substrate for high frequency integrated circuits |
Nov. 5, 2002 |
| 6465844 |
Power semiconductor device and method of manufacturing the same |
Oct. 15, 2002 |
| 6465871 |
Semiconductor switching device and method of controlling a carrier lifetime in a semiconductor switching device |
Oct. 15, 2002 |
| 6420775 |
Compound semiconductor device having an ion implanted defect-rich layer for improved backgate effect suppression |
Jul. 16, 2002 |
| 6417526 |
Semiconductor device having a rectifying junction and method of manufacturing same |
Jul. 9, 2002 |
| 6414373 |
Semiconductor device and method of fabricating the same |
Jul. 2, 2002 |
| 6407444 |
Single event upset hardening of a semiconductor device using a buried electrode |
Jun. 18, 2002 |
| 6404037 |
Insulated gate bipolar transistor |
Jun. 11, 2002 |
| 6403989 |
Semiconductor device, method of manufacturing same, and circuit provided with such a device |
Jun. 11, 2002 |
| 6395653 |
Semiconductor wafer with crystal lattice defects, and process for producing this wafer |
May. 28, 2002 |
| 6376859 |
Variable porosity porous silicon isolation |
Apr. 23, 2002 |
| 6373079 |
Thyristor with breakdown region |
Apr. 16, 2002 |
| 6365478 |
Solid state electronic device fabrication using crystalline defect control |
Apr. 2, 2002 |
| 6351024 |
Power semiconductor diode |
Feb. 26, 2002 |
| 6297523 |
GaAs single crystal as well as method of producing the same, and semiconductor device utilizing the same |
Oct. 2, 2001 |
| 6294804 |
GaAs single crystal as well as method of producing the same, and semiconductor device utilizing the GaAs single crystal |
Sep. 25, 2001 |
| 6252259 |
Semiconductor switching device having different carrier lifetimes between a first portion serving as a main current path and the remaining portion of the device |
Jun. 26, 2001 |
| 6239450 |
Negative differential resistance device based on tunneling through microclusters, and method therefor |
May. 29, 2001 |
| 6228694 |
Method of increasing the mobility of MOS transistors by use of localized stress regions |
May. 8, 2001 |
| 6222252 |
Semiconductor substrate and method for producing the same |
Apr. 24, 2001 |
| 6218683 |
Diode |
Apr. 17, 2001 |
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