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Class Information
Number: 257/E29.107
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by physical imperfections; having polished or roughened surface (epo) > Imperfections within semiconductor body (epo)
Description: This subclass is indented under subclass E29.106. This subclass is substantially the same in scope as ECLA classification H01L29/32.










Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8664746 Gettering method for dielectrically isolated devices Mar. 4, 2014
8597967 Method and system for dicing substrates containing gallium and nitrogen material Dec. 3, 2013
8043942 Method for producing core-shell nanowires, nanowires produced by the method and nanowire device comprising the nanowires Oct. 25, 2011
7993990 Multiple crystallographic orientation semiconductor structures Aug. 9, 2011
7759205 Methods for fabricating semiconductor devices minimizing under-oxide regrowth Jul. 20, 2010
7759711 Semiconductor device with substrate having increased resistance due to lattice defect and method for fabricating the same Jul. 20, 2010
7615471 Method for producing a tensioned layer on a substrate, and a layer structure Nov. 10, 2009
7323391 Substrate having silicon germanium material and stressed silicon nitride layer Jan. 29, 2008
7199404 Semiconductor substrate and semiconductor device using the same Apr. 3, 2007
7015562 High-voltage diode Mar. 21, 2006
6972459 Metal oxide semiconductor transistor having a nitrogen cluster containing layer embedded in the substrate Dec. 6, 2005
6927141 Process for forming fast recovery diode with a single large area P/N junction Aug. 9, 2005
6894366 Bipolar junction transistor with a counterdoped collector region May. 17, 2005
6888211 High-voltage diode May. 3, 2005
6870199 Semiconductor device having an electrode overlaps a short carrier lifetime region Mar. 22, 2005
6838321 SEMICONDUCTOR SUBSTRATE WITH DEFECTS REDUCED OR REMOVED AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE CAPABLE OF BIDIRECTIONALLY RETAINING BREAKDOWN VOLTAGE AND METHOD OF MANU Jan. 4, 2005
6838729 Semiconductor component with enhanced avalanche ruggedness Jan. 4, 2005
6828690 Non-uniform minority carrier lifetime distributions in high performance silicon power devices Dec. 7, 2004
6815793 Body of a semiconductor material with a reduced mean free path length Nov. 9, 2004
6815741 III-V single crystal as well as method of producing the same, and semiconductor device utilizing the III-V single crystal Nov. 9, 2004
6784488 Trench-gate semiconductor devices and the manufacture thereof Aug. 31, 2004
6781156 Recombination center diffusion controlled by carbon concentration Aug. 24, 2004
6774407 Semiconductor device with a suppressed increase in turned-on resistance and an improved turn-off response Aug. 10, 2004
6762097 Semiconductor device and method for manufacturing the same Jul. 13, 2004
6759301 Semiconductor device and method for manufacturing the same Jul. 6, 2004
6723586 Thyristor provided with integrated circuit-commutated recovery time protection and production method therefor Apr. 20, 2004
6709914 Manufacturing process of pn junction diode device and pn junction diode device Mar. 23, 2004
6707111 Hydrogen implant for buffer zone of punch-through non EPI IGBT Mar. 16, 2004
6664590 Circuit configuration for load-relieved switching Dec. 16, 2003
6630697 GaAs single crystal as well as method of producing the same, and semiconductor device utilizing the GaAs single crystal Oct. 7, 2003
6610572 Semiconductor device and method for manufacturing the same Aug. 26, 2003
6603189 Semiconductor device with deliberately damaged layer having a shorter carrier lifetime therein Aug. 5, 2003
6489187 Method for setting the breakover voltage of a thyristor Dec. 3, 2002
6482681 Hydrogen implant for buffer zone of punch-through non epi IGBT Nov. 19, 2002
6483134 Integrated circuits with immunity to single event effects Nov. 19, 2002
6475926 Substrate for high frequency integrated circuits Nov. 5, 2002
6465844 Power semiconductor device and method of manufacturing the same Oct. 15, 2002
6465871 Semiconductor switching device and method of controlling a carrier lifetime in a semiconductor switching device Oct. 15, 2002
6420775 Compound semiconductor device having an ion implanted defect-rich layer for improved backgate effect suppression Jul. 16, 2002
6417526 Semiconductor device having a rectifying junction and method of manufacturing same Jul. 9, 2002
6414373 Semiconductor device and method of fabricating the same Jul. 2, 2002
6407444 Single event upset hardening of a semiconductor device using a buried electrode Jun. 18, 2002
6404037 Insulated gate bipolar transistor Jun. 11, 2002
6403989 Semiconductor device, method of manufacturing same, and circuit provided with such a device Jun. 11, 2002
6395653 Semiconductor wafer with crystal lattice defects, and process for producing this wafer May. 28, 2002
6376859 Variable porosity porous silicon isolation Apr. 23, 2002
6373079 Thyristor with breakdown region Apr. 16, 2002
6365478 Solid state electronic device fabrication using crystalline defect control Apr. 2, 2002
6351024 Power semiconductor diode Feb. 26, 2002
6297523 GaAs single crystal as well as method of producing the same, and semiconductor device utilizing the same Oct. 2, 2001

1 2 3 4










 
 
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