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Class Information
Number: 257/E29.106
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by physical imperfections; having polished or roughened surface (epo)
Description: This subclass is indented under subclass E29.002. This subclass is substantially the same in scope as ECLA classification H01L29/30.

Sub-classes under this class:

Class Number Class Name Patents
257/E29.108 Imperfections on surface of semiconductor body (epo) 35
257/E29.107 Imperfections within semiconductor body (epo) 154

Patents under this class:

Patent Number Title Of Patent Date Issued
8536662 Method of manufacturing a semiconductor device and semiconductor devices resulting therefrom Sep. 17, 2013
8101999 SOI substrate and method for producing the same, solid-state image pickup device and method for producing the same, and image pickup apparatus Jan. 24, 2012
8097883 Thin film transistors in pixel and driver portions characterized by surface roughness Jan. 17, 2012
7928518 P-channel power MIS field effect transistor and switching circuit Apr. 19, 2011
7884446 Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate Feb. 8, 2011
7842568 Lateral power semiconductor device for high frequency power conversion system, has isolation layer formed over substrate for reducing minority carrier storage in substrate Nov. 30, 2010
7830001 Cu-Mo substrate and method for producing same Nov. 9, 2010
7704883 Annealing to improve edge roughness in semiconductor technology Apr. 27, 2010
7655950 Method of manufacturing an active matrix substrate and an image display device using the same Feb. 2, 2010
7595509 Single crystal wafer for semiconductor laser Sep. 29, 2009
7473929 Semiconductor device and method for fabricating the same Jan. 6, 2009
7101760 Charge trapping nanocrystal dielectric for non-volatile memory transistor Sep. 5, 2006

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