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Class Information
Number: 257/E29.105
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by combinations of two or more features of crystalline structure, shape, materials, physical imperfections, and concentration/distribution of impurities in bulk material (epo)
Description: This subclass is indented under subclass E29.002. This subclass is substantially the same in scope as ECLA classification H01L29/38.










Patents under this class:

Patent Number Title Of Patent Date Issued
8586998 Silicon carbide substrate manufacturing method and silicon carbide substrate Nov. 19, 2013
8497493 Growth substrate and light emitting device Jul. 30, 2013
8354673 Semiconductor component Jan. 15, 2013
8227301 Semiconductor device structures with floating body charge storage and methods for forming such semiconductor device structures Jul. 24, 2012
8158965 Heating center PCRAM structure and methods for making Apr. 17, 2012
8110897 Semiconductor device with carbon-containing region Feb. 7, 2012
8049197 Self-aligned nano-cross-point phase change memory Nov. 1, 2011
8022412 Epitaxial structure having low defect density Sep. 20, 2011
7939815 Forming a carbon passivated ovonic threshold switch May. 10, 2011
7928422 Phase change memory device capable of increasing sensing margin and method for manufacturing the same Apr. 19, 2011
7834425 Hybrid orientation SOI substrates, and method for forming the same Nov. 16, 2010
7808080 Synergistcally doped potassium niobate Oct. 5, 2010
7786464 Integrated circuit having dielectric layer including nanocrystals Aug. 31, 2010
7768041 Multiple conduction state devices having differently stressed liners Aug. 3, 2010
7655938 Phase change memory with U-shaped chalcogenide cell Feb. 2, 2010
7655950 Method of manufacturing an active matrix substrate and an image display device using the same Feb. 2, 2010
7615471 Method for producing a tensioned layer on a substrate, and a layer structure Nov. 10, 2009
7569883 Switching-controlled power MOS electronic device Aug. 4, 2009
7470960 High-voltage power semiconductor device with body regions of alternating conductivity and decreasing thickness Dec. 30, 2008
7429763 Memory with strained semiconductor by wafer bonding with misorientation Sep. 30, 2008
7423282 Memory structure and method of manufacture Sep. 9, 2008
7411209 Field-effect transistor and method for manufacturing the same Aug. 12, 2008
7368763 Semiconductor device and manufacturing method thereof May. 6, 2008
7368761 Electrostatic discharge protection device and fabrication method thereof May. 6, 2008
7323391 Substrate having silicon germanium material and stressed silicon nitride layer Jan. 29, 2008
7312137 Transistor with shallow germanium implantation region in channel Dec. 25, 2007
7304336 FinFET structure and method to make the same Dec. 4, 2007
7242041 Field-effect transistors with weakly coupled layered inorganic semiconductors Jul. 10, 2007
7235828 Semiconductor device with residual nickel from crystallization of semiconductor film Jun. 26, 2007
7101763 Low capacitance junction-isolation for bulk FinFET technology Sep. 5, 2006











 
 
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