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Class Information
Number: 257/E29.103
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by materials of semiconductor body (epo) > Semiconductor materials other than group iv, selenium, tellurium, or group iii-v compounds (epo) > Pb compounds (e.g., pbo) (epo)
Description: This subclass is indented under subclass E29.1. This subclass is substantially the same in scope as ECLA classification H01L29/24C.










Patents under this class:

Patent Number Title Of Patent Date Issued
8618553 Process for producing silicon carbide crystals having increased minority carrier lifetimes Dec. 31, 2013
8183556 Extreme high mobility CMOS logic May. 22, 2012
8115246 Semiconductor device including protrusion type isolation layer Feb. 14, 2012
RE41801 Thin-film thermoelectric device and fabrication method of same Oct. 5, 2010
7429747 Sb-based CMOS devices Sep. 30, 2008
6605772 Nanostructured thermoelectric materials and devices Aug. 12, 2003
6444896 Quantum dot thermoelectric materials and devices Sep. 3, 2002
4847666 Hot electron transistors Jul. 11, 1989
4743949 Infrared optical-electronic device May. 10, 1988
4415531 Semiconductor materials Nov. 15, 1983
4350990 Electrode for lead-salt diodes Sep. 21, 1982
4339764 PbS.sub.x Se.sub.1-x semiconductor Jul. 13, 1982
4171996 Fabrication of a heterogeneous semiconductor structure with composition gradient utilizing a gas phase transfer process Oct. 23, 1979
4170818 Barrier height voltage reference Oct. 16, 1979
4137545 Gate turn-off thyristor with anode rectifying contact to non-regenerative section Jan. 30, 1979
4126732 Surface passivation of IV-VI semiconductors with As.sub.2 S.sub.3 Nov. 21, 1978











 
 
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