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Class Information
Number: 257/E29.102
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by materials of semiconductor body (epo) > Semiconductor materials other than group iv, selenium, tellurium, or group iii-v compounds (epo) > Group i-vi or i-vii compounds (e.g., cu 2 o, cui) (epo)
Description: This subclass is indented under subclass E29.1. This subclass is substantially the same in scope as ECLA classification H01L29/24B.










Patents under this class:

Patent Number Title Of Patent Date Issued
8664724 Semiconductor devices having slit well tub Mar. 4, 2014
8253145 Semiconductor device having strong excitonic binding Aug. 28, 2012
8058641 Copper blend I-VII compound semiconductor light-emitting devices Nov. 15, 2011
7683457 Group I-VII semiconductor single crystal thin film and process for producing same Mar. 23, 2010
7582938 I/O and power ESD protection circuits by enhancing substrate-bias in deep-submicron CMOS process Sep. 1, 2009
7026911 Point contact array, not circuit, and electronic circuit comprising the same Apr. 11, 2006
6906350 Delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure Jun. 14, 2005
6902964 Methods of fabricating delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure Jun. 7, 2005
5614727 Thin film diode having large current capability with low turn-on voltages for integrated devices Mar. 25, 1997
5061973 Semiconductor heterojunction device with graded bandgap Oct. 29, 1991











 
 
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