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Class Information
Number: 257/E29.101
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by materials of semiconductor body (epo) > Semiconductor materials other than group iv, selenium, tellurium, or group iii-v compounds (epo) > Amorphous materials (epo)
Description: This subclass is indented under subclass E29.1. This subclass is substantially the same in scope as ECLA classification H01L29/24E.










Patents under this class:

Patent Number Title Of Patent Date Issued
8558225 Oxide thin film transistor having source and drain electrodes being formed between a primary and a secondary active layers Oct. 15, 2013
8546800 Thin film transistor Oct. 1, 2013
8460966 Thin film transistor and method for fabricating thin film transistor Jun. 11, 2013
8426259 Array substrate and method for manufacturing the same Apr. 23, 2013
8253134 Oxide thin film transistor Aug. 28, 2012
8232552 Noncrystalline oxide semiconductor thin film, process for producing the noncrystalline oxide semiconductor thin film, process for producing thin-film transistor, field-effect-transistor, light Jul. 31, 2012
8212252 Light-emitting device Jul. 3, 2012
8212249 Methods of forming a layer of material on a substrate and structures formed therefrom Jul. 3, 2012
8203146 Integrated circuits utilizing amorphous oxides Jun. 19, 2012
8168974 Field effect transistor May. 1, 2012
8071981 Semiconductor device and method for fabricating the same Dec. 6, 2011
7872259 Light-emitting device Jan. 18, 2011
7868326 Field effect transistor Jan. 11, 2011
7863611 Integrated circuits utilizing amorphous oxides Jan. 4, 2011
7799596 Phase change memory device and method for manufacturing the same Sep. 21, 2010
7528401 Agglomeration elimination for metal sputter deposition of chalcogenides May. 5, 2009
7297977 Semiconductor device Nov. 20, 2007
7030410 Resistance variable device Apr. 18, 2006
6893894 Method of manufacturing a compound semiconductor by heating a layered structure including rare earth transition metal May. 17, 2005
6855975 Thin film diode integrated with chalcogenide memory cell Feb. 15, 2005
6833559 Non-volatile resistance variable device Dec. 21, 2004
6638820 Method of forming chalcogenide comprising devices, method of precluding diffusion of a metal into adjacent chalcogenide material, and chalcogenide comprising devices Oct. 28, 2003
5093704 Semiconductor device having a semiconductor region in which a band gap being continuously graded Mar. 3, 1992
4887134 Semiconductor device having a semiconductor region in which either the conduction or valence band remains flat while bandgap is continuously graded Dec. 12, 1989
4844587 Active matrix display screen using hydrogenated amorphous silicon carbide and process for producing this screen Jul. 4, 1989
4478654 Amorphous silicon carbide method Oct. 23, 1984
4254429 Hetero junction semiconductor device Mar. 3, 1981











 
 
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