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Class Information
Number: 257/E29.1
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by materials of semiconductor body (epo) > Semiconductor materials other than group iv, selenium, tellurium, or group iii-v compounds (epo)
Description: This subclass is indented under subclass E29.068. This subclass is substantially the same in scope as ECLA classification H01L29/24.

Sub-classes under this class:

Class Number Class Name Patents
257/E29.101 Amorphous materials (epo) 27
257/E29.102 Group i-vi or i-vii compounds (e.g., cu 2 o, cui) (epo) 10
257/E29.103 Pb compounds (e.g., pbo) (epo) 16
257/E29.104 Si compounds (e.g., sic) (epo) 520

Patents under this class:
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Patent Number Title Of Patent Date Issued
8647031 Method of making a semiconductor device having a multicomponent oxide Feb. 11, 2014
8492756 Semiconductor device and method for manufacturing the same Jul. 23, 2013
8410511 Methods for high temperature processing of epitaxial chips Apr. 2, 2013
8395233 Inductor structures for integrated circuit devices Mar. 12, 2013
8373163 Oxide semiconductor and thin film transistor including the same Feb. 12, 2013
8357597 Process for producing Si.sub.(1-v-w-x)C.sub.wAl.sub.xN.sub.v base material, process for producing epitaxial wafer, Si.sub.(1-v-w-x)C.sub.wAl.sub.xN.sub.v base material, and epitaxial wafer Jan. 22, 2013
8294245 GaN single-crystal mass and method of its manufacture, and semiconductor device and method of its manufacture Oct. 23, 2012
8173095 Method and apparatus for producing graphene oxide layers on an insulating substrate May. 8, 2012
8134152 CMOS thin film transistor, method of fabricating the same and organic light emitting display device having laminated PMOS poly-silicon thin film transistor with a top gate configuration and a Mar. 13, 2012
8093684 Iron sulfide semiconductor doped with Mg or Zn, junction devices and photoelectric converter comprising same Jan. 10, 2012
8008749 Semiconductor device having vertical electrodes structure Aug. 30, 2011
7956356 Sapphire substrates and methods of making same Jun. 7, 2011
7952090 Electrochemical thin-film transistor May. 31, 2011
7943964 Al.sub.xGa.sub.yIn.sub.1-x-yN crystal substrate, semiconductor device, and method of manufacturing the same May. 17, 2011
7927911 Wafer bonded access device for multi-layer phase change memory using lock-and-key alignment Apr. 19, 2011
7838348 Semiconductor device Nov. 23, 2010
7834380 Field effect transistor and method for fabricating the same Nov. 16, 2010
7825435 Diode-like composite semiconductor device Nov. 2, 2010
7732251 Method of making a semiconductor device having a multicomponent oxide Jun. 8, 2010
7633082 Light emitting device Dec. 15, 2009
7339187 Transistor structures Mar. 4, 2008
7075111 Nitride semiconductor substrate and its production method Jul. 11, 2006
6936900 Integrated transistor devices Aug. 30, 2005
6911893 Ceramic electronic component Jun. 28, 2005
6900463 Semiconductor device May. 31, 2005
6790278 Method for preparing low-resistant p-type SrTiO3 Sep. 14, 2004
6451711 Epitaxial wafer apparatus Sep. 17, 2002
6445015 Metal sulfide semiconductor transistor devices Sep. 3, 2002
6355941 Semiconductor device Mar. 12, 2002
6312617 Conductive isostructural compounds Nov. 6, 2001
6207976 Semiconductor device with ohmic contacts on compound semiconductor and manufacture thereof Mar. 27, 2001
5877041 Self-aligned power field effect transistor in silicon carbide Mar. 2, 1999
5831286 High mobility p-type transition metal tri-antimonide and related skutterudite compounds and alloys for power semiconducting devices Nov. 3, 1998
5800794 Clathrate compounds and processes for production thereof Sep. 1, 1998
5760462 Metal, passivating layer, semiconductor, field-effect transistor Jun. 2, 1998
5682041 Electronic part incorporating artificial super lattice Oct. 28, 1997
5670800 Semiconductor device and method for fabricating the same Sep. 23, 1997
5658834 Forming B.sub.1-x C.sub.x semiconductor layers by chemical vapor deposition Aug. 19, 1997
5594263 Semiconductor device containing a semiconducting crystalline nanoporous material Jan. 14, 1997
5591987 Semiconductor MIS field effect transistor with semi-amorphous semiconductor material Jan. 7, 1997
5539248 Semiconductor device with improved insulating/passivating layer of indium gallium fluoride (InGaF) Jul. 23, 1996
5468978 Forming B.sub.1-x C.sub.x semiconductor devices by chemical vapor deposition Nov. 21, 1995
5358666 Ohmic electrode materials for semiconductor ceramics and semiconductor ceramics elements made thereof Oct. 25, 1994
RE34658 Semiconductor device of non-single crystal-structure Jul. 12, 1994
5262350 Forming a non single crystal semiconductor layer by using an electric current Nov. 16, 1993
5247349 Passivation and insulation of III-V devices with pnictides, particularly amorphous pnictides having a layer-like structure Sep. 21, 1993
5213906 Composite material comprising a layer of a III-V compound and a layer of rare earth pnictide, production process and application May. 25, 1993
5032472 Films of catenated phosphorus materials, their preparation and use, and semiconductor and other devices employing them Jul. 16, 1991
5030583 Method of making single crystal semiconductor substrate articles and semiconductor device Jul. 9, 1991
5006914 Single crystal semiconductor substrate articles and semiconductor devices comprising same Apr. 9, 1991

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