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Class Information
Number: 257/E29.099
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by materials of semiconductor body (epo) > Only group ii-vi compounds (epo) > Cdx compounds being one element of sixth group of periodic system (epo)
Description: This subclass is indented under subclass E29.094. This subclass is substantially the same in scope as ECLA classification H01L29/22B.

Patents under this class:

Patent Number Title Of Patent Date Issued
8253172 Semiconductor device with linearly restricted gate level region including four serially connected transistors of first type and four serially connected transistors of second type separated by Aug. 28, 2012
8119513 Method for making cadmium sulfide layer Feb. 21, 2012
7064346 Transistor and semiconductor device Jun. 20, 2006
5783838 Non-single crystalline semiconductor photo detector with super lattice Jul. 21, 1998
5061973 Semiconductor heterojunction device with graded bandgap Oct. 29, 1991
4777517 Compound semiconductor integrated circuit device Oct. 11, 1988
4566918 Utilizing interdiffusion of sequentially deposited links of HgTe and CdTe Jan. 28, 1986
4319069 Semiconductor devices having improved low-resistance contacts to p-type CdTe, and method of preparation Mar. 9, 1982
4170818 Barrier height voltage reference Oct. 16, 1979

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