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Class Information
Number: 257/E29.098
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by materials of semiconductor body (epo) > Only group ii-vi compounds (epo) > Further characterized by doping material (epo)
Description: This subclass is indented under subclass E29.094. This subclass is substantially the same in scope as ECLA classification H01L29/227.

Patents under this class:

Patent Number Title Of Patent Date Issued
7666764 Compound semiconductor material and method for forming an active layer of a thin film transistor device Feb. 23, 2010
7557385 Electronic devices formed on substrates and their fabrication methods Jul. 7, 2009
6815736 Isoelectronic co-doping Nov. 9, 2004
6759312 Co-implantation of group VI elements and N for formation of non-alloyed ohmic contacts for n-type semiconductors Jul. 6, 2004
6624441 Homoepitaxial layers of p-type zinc oxide and the fabrication thereof Sep. 23, 2003
6225200 Rare-earth element-doped III-V compound semiconductor schottky diodes and device formed thereby May. 1, 2001
5847437 Rare-earth element-doped III-V compound semiconductor schottky diodes and device formed thereby Dec. 8, 1998
5767533 High-conductivity semiconductor material having a dopant comprising coulombic pairs of elements Jun. 16, 1998
5234842 Method of producing p-typed CdS Aug. 10, 1993
5150191 P-type II-VI compound semiconductor doped Sep. 22, 1992
4526632 Method of fabricating a semiconductor pn junction Jul. 2, 1985
4389256 Method of manufacturing pn junction in group II-VI compound semiconductor Jun. 21, 1983
4264914 Wide-band-gap, alkaline-earth-oxide semiconductor and devices utilizing same Apr. 28, 1981
4105472 Preparation of silicon doped mercury cadmium telluride Aug. 8, 1978
4105478 Doping HgCdTe with Li Aug. 8, 1978
4089714 Doping mercury cadmium telluride with aluminum or silicon May. 16, 1978
4087293 Silicon as donor dopant in Hg.sub.1-x Cd.sub.x Te May. 2, 1978

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