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Class Information
Number: 257/E29.097
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by materials of semiconductor body (epo) > Only group ii-vi compounds (epo) > Including two or more compounds (e.g., alloys) (epo) > In different semiconductor regions (e.g., heterojunctions) (epo)
Description: This subclass is indented under subclass E29.096. This subclass is substantially the same in scope as ECLA classification H01L29/225.










Patents under this class:

Patent Number Title Of Patent Date Issued
8558285 Method using low temperature wafer bonding to fabricate transistors with heterojunctions of Si(Ge) to III-N materials Oct. 15, 2013
7671383 Semiconductor device and method of producing the same Mar. 2, 2010
7427555 Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy Sep. 23, 2008
5694412 Epitaxial visible-light-emitting devices with light extracted through the substrate and method of making same Dec. 2, 1997
5449927 Multilayer buffer structure including II-VI compounds on a silicon substrate Sep. 12, 1995
5422902 BeTe-ZnSe graded band gap ohmic contact to p-type ZnSe semiconductors Jun. 6, 1995
5343057 Thin film, field effect transistor with a controlled energy band Aug. 30, 1994
5156995 Method for reducing or eliminating interface defects in mismatched semiconductor epilayers Oct. 20, 1992
5106766 Method of making a semiconductor device that comprises p-type III-V semiconductor material Apr. 21, 1992
5061973 Semiconductor heterojunction device with graded bandgap Oct. 29, 1991
5036371 Multiple quantum well device Jul. 30, 1991
5032893 Method for reducing or eliminating interface defects in mismatched semiconductor eiplayers Jul. 16, 1991
5001534 Heterojunction bipolar transistor Mar. 19, 1991
4885619 HgCdTe MIS device having a CdTe heterojunction Dec. 5, 1989
4697202 Integrated circuit having dislocation free substrate Sep. 29, 1987
4549195 Heterojunction semiconductor device Oct. 22, 1985
4274890 Method for the epitaxial manufacture of a semiconductor device having a multi-layer structure Jun. 23, 1981
4171996 Fabrication of a heterogeneous semiconductor structure with composition gradient utilizing a gas phase transfer process Oct. 23, 1979
4117504 Heterogeneous semiconductor structure with composition gradient and method for producing same Sep. 26, 1978











 
 
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