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Class Information
Number: 257/E29.096
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by materials of semiconductor body (epo) > Only group ii-vi compounds (epo) > Including two or more compounds (e.g., alloys) (epo)
Description: This subclass is indented under subclass E29.094. This subclass is substantially the same in scope as ECLA classification H01L29/221.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.097 In different semiconductor regions (e.g., heterojunctions) (epo) 19


Patents under this class:

Patent Number Title Of Patent Date Issued
8710499 Transistor and display device Apr. 29, 2014
8129717 Semiconductor device and method for manufacturing the same Mar. 6, 2012
8034669 Drive current adjustment for transistors formed in the same active region by locally providing embedded strain-inducing semiconductor material in the active region Oct. 11, 2011
7847297 Ohmic contact on p-type GaN Dec. 7, 2010
7671378 Photonic devices formed on substrates and their fabrication methods Mar. 2, 2010
7544523 Method of fabricating nanodevices Jun. 9, 2009
6518077 Method for making optoelectronic and microelectronic devices including cubic ZnMgO and/or CdMgO alloys Feb. 11, 2003
6423983 Optoelectronic and microelectronic devices including cubic ZnMgO and/or CdMgO alloys Jul. 23, 2002
6246071 Zirconia-containing transparent and conducting oxides Jun. 12, 2001
5767536 II-VI group compound semiconductor device Jun. 16, 1998
5682041 Electronic part incorporating artificial super lattice Oct. 28, 1997
5587609 II-VI group compound semiconductor device metallic nitride ohmic contact for p-type Dec. 24, 1996
5540786 Light emitting material Jul. 30, 1996
5442204 III-V Semiconductor heterostructure contacting a P-type II-VI compound Aug. 15, 1995
4779004 Infrared imager Oct. 18, 1988
4766084 Process for the production of an electric contact on a HgCdTe substrate with a P conductivity and application to the production of an N/P diode Aug. 23, 1988
4697202 Integrated circuit having dislocation free substrate Sep. 29, 1987
4686373 Infrared imager Aug. 11, 1987
4684812 Switching circuit for a detector array Aug. 4, 1987
4632886 Sulfidization of compound semiconductor surfaces and passivated mercury cadmium telluride substrates Dec. 30, 1986
4600469 Method for polishing detector material Jul. 15, 1986
4447291 Method for via formation in HgCdTe May. 8, 1984
4435224 Process for preparing homogeneous layers of composition Hg.sub.1-x Cd.sub.x Mar. 6, 1984
4377904 Method of fabricating a narrow band-gap semiconductor CCD imaging device Mar. 29, 1983
4171996 Fabrication of a heterogeneous semiconductor structure with composition gradient utilizing a gas phase transfer process Oct. 23, 1979
4128467 Method of ion etching Cd-Hg-Te semiconductors Dec. 5, 1978
4105477 Doping of (Hg,Cd)Te with a Group VA element Aug. 8, 1978
4105478 Doping HgCdTe with Li Aug. 8, 1978
4085500 Ohmic contacts to p-type mercury cadmium telluride Apr. 25, 1978
4003759 Ion implantation of gold in mercury cadmium telluride Jan. 18, 1977
4000508 Ohmic contacts to p-type mercury cadmium telluride Dec. 28, 1976
3979271 Deposition of solid semiconductor compositions and novel semiconductor materials Sep. 7, 1976
3977018 Passivation of mercury cadmium telluride semiconductor surfaces by anodic oxidation Aug. 24, 1976











 
 
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