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Class Information
Number: 257/E29.093
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by materials of semiconductor body (epo) > Only group iii-v compounds (epo) > Further characterized by doping material (epo)
Description: This subclass is indented under subclass E29.089. This subclass is substantially the same in scope as ECLA classification H01L29/207.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8709925 Method for conductivity control of (Al,In,Ga,B)N Apr. 29, 2014
8680508 Semiconductor light emitting device and method for manufacturing same Mar. 25, 2014
8598626 Epitaxial substrate for semiconductor device, schottky junction structure, and leakage current suppression method for schottky junction structure Dec. 3, 2013
8377683 Zinc oxide-based nanostructure modified QCM for dynamic monitoring of cell adhesion and proliferation Feb. 19, 2013
8253220 Nitride semiconductor device and method for fabricating the same Aug. 28, 2012
8237245 Nitride semiconductor crystal, manufacturing method of the nitride semiconductor freestanding substrate and nitride semiconductor device Aug. 7, 2012
8207556 Group III nitride semiconductor device and epitaxial substrate Jun. 26, 2012
8193079 Method for conductivity control of (Al,In,Ga,B)N Jun. 5, 2012
8120013 Nitride semi-conductor light emitting device and a process of producing a nitride semi-conductor light emitting device Feb. 21, 2012
8076700 P-N junction for use as an RF mixer from GHZ to THZ frequencies Dec. 13, 2011
8044414 Semiconductor layered structure and its method of formation, and light emitting device Oct. 25, 2011
8034669 Drive current adjustment for transistors formed in the same active region by locally providing embedded strain-inducing semiconductor material in the active region Oct. 11, 2011
7989851 Multifunctional biosensor based on ZnO nanostructures Aug. 2, 2011
7872285 Vertical gallium nitride semiconductor device and epitaxial substrate Jan. 18, 2011
7795044 Electronically scannable multiplexing device Sep. 14, 2010
7696546 Solid-state imaging device having wiring layer which includes lamination of silicide layer in order to reduce wiring resistance, and manufacturing method for the same Apr. 13, 2010
7233041 Large-area nanoenabled macroelectronic substrates and uses therefor Jun. 19, 2007
7018728 Boron phosphide-based semiconductor device and production method thereof Mar. 28, 2006
6955858 Transition metal doped ferromagnetic III-V nitride material films and methods of fabricating the same Oct. 18, 2005
6953740 Highly doped III-nitride semiconductors Oct. 11, 2005
6953729 Heterojunction field effect transistor and manufacturing method thereof Oct. 11, 2005
6815736 Isoelectronic co-doping Nov. 9, 2004
6815741 III-V single crystal as well as method of producing the same, and semiconductor device utilizing the III-V single crystal Nov. 9, 2004
6800879 Method of preparing indium phosphide heterojunction bipolar transistors Oct. 5, 2004
6794731 Minority carrier semiconductor devices with improved reliability Sep. 21, 2004
6759312 Co-implantation of group VI elements and N for formation of non-alloyed ohmic contacts for n-type semiconductors Jul. 6, 2004
6750482 Highly conductive semiconductor layer having two or more impurities Jun. 15, 2004
6680497 Interstitial diffusion barrier Jan. 20, 2004
6630697 GaAs single crystal as well as method of producing the same, and semiconductor device utilizing the GaAs single crystal Oct. 7, 2003
6583449 Semiconductor device and method of forming a semiconductor device Jun. 24, 2003
6525349 Heterojunction bipolar transistor with tensile graded carbon-doped base layer grown by MOCVD Feb. 25, 2003
6483134 Integrated circuits with immunity to single event effects Nov. 19, 2002
6448648 Metalization of electronic semiconductor devices Sep. 10, 2002
6437374 Semiconductor device and method of forming a semiconductor device Aug. 20, 2002
6297523 GaAs single crystal as well as method of producing the same, and semiconductor device utilizing the same Oct. 2, 2001
6294804 GaAs single crystal as well as method of producing the same, and semiconductor device utilizing the GaAs single crystal Sep. 25, 2001
6104039 P-type nitrogen compound semiconductor and method of manufacturing same Aug. 15, 2000
5856681 Semiconductor device Jan. 5, 1999
5828087 AlInAs semiconductor device contaning Si and P Oct. 27, 1998
5770873 GaAs single crystal as well as method of producing the same, and semiconductor device utilizing the GaAs single crystal Jun. 23, 1998
5738722 III-V system compound semiconductor device and method for manufacturing the semiconductor device Apr. 14, 1998
5698875 Metal-semiconductor field effect transistor having reduced control voltage and well controlled pinch off voltage Dec. 16, 1997
5479028 III-V system compound semiconductor device and method for manufacturing the semiconductor device Dec. 26, 1995
5422731 Semiconductor arrangement made of compound semiconductor material Jun. 6, 1995
5387807 P-N junction diffusion barrier employing mixed dopants Feb. 7, 1995
5342795 Method of fabricating power VFET gate-refill Aug. 30, 1994
5329151 Semiconductor diode Jul. 12, 1994
5314547 Rare earth slab doping of group III-V compounds May. 24, 1994
5302839 Light emitting diode having an improved GaP compound substrate for an epitaxial growth layer thereon Apr. 12, 1994
5268582 P-N junction devices with group IV element-doped group III-V compound semiconductors Dec. 7, 1993

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