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Class Information
Number: 257/E29.091
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by materials of semiconductor body (epo) > Only group iii-v compounds (epo) > Including two or more compounds (e.g., alloys) (epo) > In different semiconductor regions (e.g., heterojunctions) (epo)
Description: This subclass is indented under subclass E29.09. This subclass is substantially the same in scope as ECLA classification H01L29/205.

Patents under this class:
1 2 3 4 5 6

Patent Number Title Of Patent Date Issued
8686402 Tunnel field effect transistor and method of manufacturing same Apr. 1, 2014
8598594 Semiconductor device and its fabrication method Dec. 3, 2013
8581335 Compound semiconductor device and manufacturing method thereof Nov. 12, 2013
8575471 Lattice matched semiconductor growth on crystalline metallic substrates Nov. 5, 2013
8563984 Semiconductor device Oct. 22, 2013
8564020 Transistors and rectifiers utilizing hybrid electrodes and methods of fabricating the same Oct. 22, 2013
8558280 Semiconductor device and method of manufacturing the semiconductor device Oct. 15, 2013
8558285 Method using low temperature wafer bonding to fabricate transistors with heterojunctions of Si(Ge) to III-N materials Oct. 15, 2013
8525229 Semiconductor device Sep. 3, 2013
8441035 Field effect transistor and method of manufacturing the same May. 14, 2013
8404508 Enhancement mode GaN HEMT device and method for fabricating the same Mar. 26, 2013
8373200 Nitride based semiconductor device and method for manufacturing of the same Feb. 12, 2013
8344421 Group III-nitride enhancement mode field effect devices and fabrication methods Jan. 1, 2013
8330168 Nitride semiconductor light-emitting element and method of manufacturing the same Dec. 11, 2012
8314017 Method for manufacturing a low defect interface between a dielectric and a III-V compound Nov. 20, 2012
8298840 Dual sided processing and devices based on freestanding nitride and zinc oxide films Oct. 30, 2012
8278694 Semiconductor device with vertical transistor Oct. 2, 2012
8264001 Semiconductor wafer having multi-layered buffer region formed from compound semiconductor materials Sep. 11, 2012
8247842 Nitride semiconductor device having graded aluminum content Aug. 21, 2012
8236648 Trench MOS transistor and method of manufacturing the same Aug. 7, 2012
8232557 Semiconductor substrate with AlGaN formed thereon and semiconductor device using the same Jul. 31, 2012
8207556 Group III nitride semiconductor device and epitaxial substrate Jun. 26, 2012
8203172 Nitride semiconductor device Jun. 19, 2012
8193539 Compound semiconductor device using SiC substrate and its manufacture Jun. 5, 2012
8183597 GaN semiconductor device having a high withstand voltage May. 22, 2012
8178898 GaN-based semiconductor element May. 15, 2012
8168494 Trench MOS transistor and method of manufacturing the same May. 1, 2012
8148718 Low voltage transistors Apr. 3, 2012
8129725 Semiconductor sensor Mar. 6, 2012
8093627 Nitride semiconductor device and method for producing nitride semiconductor device Jan. 10, 2012
8035128 Semiconductor device and method for fabricating the same Oct. 11, 2011
7989842 Method and apparatus for heterojunction barrier diode detector for ultrahigh sensitivity Aug. 2, 2011
7821030 Semiconductor device and method for manufacturing the same Oct. 26, 2010
7781805 Memory with high dielectric constant antifuses adapted for use at low voltage Aug. 24, 2010
7705371 Field effect transistor having reduced contact resistance and method for fabricating the same Apr. 27, 2010
7700972 Semiconductor device Apr. 20, 2010
7646040 Boron phosphide-based compound semiconductor device, production method thereof and light emitting diode Jan. 12, 2010
7638818 Robust transistors with fluorine treatment Dec. 29, 2009
7622791 III-V group nitride system semiconductor substrate Nov. 24, 2009
7585706 Method of fabricating a semiconductor device Sep. 8, 2009
7573059 Dislocation-free InSb quantum well structure on Si using novel buffer architecture Aug. 11, 2009
7560725 Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices Jul. 14, 2009
7550821 Nitride semiconductor device Jun. 23, 2009
7352015 Gallium nitride materials and methods associated with the same Apr. 1, 2008
7256432 Field-effect transistor Aug. 14, 2007
7049678 Diverse band gap energy level semiconductor device May. 23, 2006
7038248 Diverse band gap energy level semiconductor device May. 2, 2006
6982439 Tunnel junctions for long-wavelength VCSELs Jan. 3, 2006
6952019 Electron device which controls quantum chaos and quantum chaos controlling method Oct. 4, 2005
6933539 Tunnel junctions for long-wavelength VCSELs Aug. 23, 2005

1 2 3 4 5 6

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