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Class Information
Number: 257/E29.091
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by materials of semiconductor body (epo) > Only group iii-v compounds (epo) > Including two or more compounds (e.g., alloys) (epo) > In different semiconductor regions (e.g., heterojunctions) (epo)
Description: This subclass is indented under subclass E29.09. This subclass is substantially the same in scope as ECLA classification H01L29/205.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7352015 |
Gallium nitride materials and methods associated with the same |
Apr. 1, 2008 |
| 7256432 |
Field-effect transistor |
Aug. 14, 2007 |
| 7049678 |
Diverse band gap energy level semiconductor device |
May. 23, 2006 |
| 7038248 |
Diverse band gap energy level semiconductor device |
May. 2, 2006 |
| 6982439 |
Tunnel junctions for long-wavelength VCSELs |
Jan. 3, 2006 |
| 6952019 |
Electron device which controls quantum chaos and quantum chaos controlling method |
Oct. 4, 2005 |
| 6933539 |
Tunnel junctions for long-wavelength VCSELs |
Aug. 23, 2005 |
| 6878959 |
Group III-V semiconductor devices including semiconductor materials made by spatially-selective intermixing of atoms on the group V sublattice |
Apr. 12, 2005 |
| 6875995 |
Heterogeneous bandgap structures for semiconductor devices and manufacturing methods therefor |
Apr. 5, 2005 |
| 6856005 |
Semiconductor device having a nitride-based hetero-structure and method of manufacturing the same |
Feb. 15, 2005 |
| 6853008 |
Semiconductor device and manufacturing method thereof |
Feb. 8, 2005 |
| 6841409 |
Group III-V compound semiconductor and group III-V compound semiconductor device using the same |
Jan. 11, 2005 |
| 6822274 |
Heterojunction semiconductor device having an intermediate layer for providing an improved junction |
Nov. 23, 2004 |
| 6806512 |
InPSb/InAs BJT device and method of making |
Oct. 19, 2004 |
| 6787822 |
Heterojunction III-V transistor, in particular HEMT field effect transistor or heterojunction bipolar transistor |
Sep. 7, 2004 |
| 6750481 |
Semiconductor laminated substrate, semiconductor crystal substrate and semiconductor device and method of manufacturing the same |
Jun. 15, 2004 |
| 6744078 |
Heterojunction structure with a charge compensation layer formed between two group III-V semiconductor layers |
Jun. 1, 2004 |
| 6734530 |
GaN-based compound semiconductor EPI-wafer and semiconductor element using the same |
May. 11, 2004 |
| 6703639 |
Nanofabrication for InAs/AlSb heterostructures |
Mar. 9, 2004 |
| 6686646 |
Diverse band gap energy level semiconductor device |
Feb. 3, 2004 |
| 6657278 |
Diverse band gap energy level semiconductor device |
Dec. 2, 2003 |
| 6624451 |
High frequency field effect transistor with carrier extraction to reduce intrinsic conduction |
Sep. 23, 2003 |
| 6537513 |
Semiconductor substrate and method for making the same |
Mar. 25, 2003 |
| 6531718 |
Semiconductor device |
Mar. 11, 2003 |
| 6531748 |
Semiconductor power component with a reduced parasitic bipolar transistor |
Mar. 11, 2003 |
| 6489639 |
High electron mobility transistor |
Dec. 3, 2002 |
| 6482711 |
InPSb/InAs BJT device and method of making |
Nov. 19, 2002 |
| 6472298 |
Layered group III-V compound semiconductor, method of manufacturing the same and light emitting element |
Oct. 29, 2002 |
| 6455879 |
Low resistance contact semiconductor diode |
Sep. 24, 2002 |
| 6437374 |
Semiconductor device and method of forming a semiconductor device |
Aug. 20, 2002 |
| 6406795 |
Compliant universal substrates for optoelectronic and electronic devices |
Jun. 18, 2002 |
| 6403874 |
High-efficiency heterostructure thermionic coolers |
Jun. 11, 2002 |
| 6348698 |
Layered semiconductor structures and light emitting devices including the structure |
Feb. 19, 2002 |
| 6346720 |
Layered group III-V compound semiconductor, method of manufacturing the same, and light emitting element |
Feb. 12, 2002 |
| 6323414 |
Heterostructure thermionic coolers |
Nov. 27, 2001 |
| 6294414 |
Method of fabricating heterointerface devices having diffused junctions |
Sep. 25, 2001 |
| 6177685 |
Nitride-type III-V HEMT having an InN 2DEG channel layer |
Jan. 23, 2001 |
| 6172420 |
Silicon delta-doped gallium arsenide/indium arsenide heterojunction OHMIC contact |
Jan. 9, 2001 |
| 6144045 |
High power devices based on gallium nitride and aluminum gallium nitride semiconductor heterostructures |
Nov. 7, 2000 |
| 6133590 |
Low resistance contact semiconductor diode |
Oct. 17, 2000 |
| 6104039 |
P-type nitrogen compound semiconductor and method of manufacturing same |
Aug. 15, 2000 |
| 6075254 |
Polarization insensitive/independent semiconductor waveguide modulator using tensile stressors |
Jun. 13, 2000 |
| 6060331 |
Method for making heterostructure thermionic coolers |
May. 9, 2000 |
| 6043143 |
Ohmic contact and method of manufacture |
Mar. 28, 2000 |
| 5982024 |
High concentration doped semiconductor |
Nov. 9, 1999 |
| 5962877 |
Inverter apparatus having improved switching element |
Oct. 5, 1999 |
| 5955772 |
Heterostructure thermionic coolers |
Sep. 21, 1999 |
| 5952672 |
Semiconductor device and method for fabricating the same |
Sep. 14, 1999 |
| 5929466 |
Semiconductor device and method of fabricating the same |
Jul. 27, 1999 |
| 5912480 |
Heterojunction semiconductor device |
Jun. 15, 1999 |
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