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Class Information
Number: 257/E29.09
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by materials of semiconductor body (epo) > Only group iii-v compounds (epo) > Including two or more compounds (e.g., alloys) (epo)
Description: This subclass is indented under subclass E29.089. This subclass is substantially the same in scope as ECLA classification H01L29/201.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.091 In different semiconductor regions (e.g., heterojunctions) (epo) 253


Patents under this class:
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Patent Number Title Of Patent Date Issued
8575471 Lattice matched semiconductor growth on crystalline metallic substrates Nov. 5, 2013
8575660 Group III-V semiconductor device with strain-relieving interlayers Nov. 5, 2013
8525330 Connecting member for connecting a semiconductor element and a frame, formed of an Al-based layer and first and second Zn-based layers provided on surfaces of the Al-based layer Sep. 3, 2013
8476642 Compound semiconductor device and manufacturing method thereof Jul. 2, 2013
8471309 Compound semiconductor device and method of manufacturing the same Jun. 25, 2013
8450813 Fin transistor structure and method of fabricating the same May. 28, 2013
8445973 Fin transistor structure and method of fabricating the same May. 21, 2013
8410474 Graphene grown substrate and electronic/photonic integrated circuits using same Apr. 2, 2013
8304983 ITO film treated by nitrogen plasma and the organic luminescent device using the same Nov. 6, 2012
8237194 Nitride semiconductor substrate Aug. 7, 2012
8232116 Method for fabricating a polymer L.E.D. Jul. 31, 2012
8203172 Nitride semiconductor device Jun. 19, 2012
8058705 Composite material substrate Nov. 15, 2011
8044379 Well-aligned, high aspect-ratio, high-density silicon nanowires and methods of making the same Oct. 25, 2011
7902051 Method for fabrication of single crystal diodes for resistive memories Mar. 8, 2011
7834380 Field effect transistor and method for fabricating the same Nov. 16, 2010
7687287 Method for fabricating a polymer L.E.D. Mar. 30, 2010
7279398 Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces Oct. 9, 2007
7242041 Field-effect transistors with weakly coupled layered inorganic semiconductors Jul. 10, 2007
7018728 Boron phosphide-based semiconductor device and production method thereof Mar. 28, 2006
6903364 Semiconductor structures using a group III-nitride material system with reduced phase separation and method of fabrication Jun. 7, 2005
6841409 Group III-V compound semiconductor and group III-V compound semiconductor device using the same Jan. 11, 2005
6806512 InPSb/InAs BJT device and method of making Oct. 19, 2004
6797533 Quantum well intermixing in InGaAsP structures induced by low temperature grown InP Sep. 28, 2004
6797990 Boron phosphide-based semiconductor device and production method thereof Sep. 28, 2004
6611007 Method for locally modifying the effective bandgap energy in indium gallium arsenide phosphide (InGaAsP) quantum well structures Aug. 26, 2003
6521917 Semiconductor structures using a group III-nitride quaternary material system with reduced phase separation Feb. 18, 2003
6501105 Compound semiconductor device Dec. 31, 2002
6482711 InPSb/InAs BJT device and method of making Nov. 19, 2002
6472298 Layered group III-V compound semiconductor, method of manufacturing the same and light emitting element Oct. 29, 2002
6417519 Field effect transistor with suppressed threshold change Jul. 9, 2002
6350997 Semiconductor light emitting element Feb. 26, 2002
6346720 Layered group III-V compound semiconductor, method of manufacturing the same, and light emitting element Feb. 12, 2002
6232624 InPSb channel HEMT on InP for RF application May. 15, 2001
6177685 Nitride-type III-V HEMT having an InN 2DEG channel layer Jan. 23, 2001
6144045 High power devices based on gallium nitride and aluminum gallium nitride semiconductor heterostructures Nov. 7, 2000
5981980 Semiconductor laminating structure Nov. 9, 1999
5977612 Semiconductor devices constructed from crystallites Nov. 2, 1999
5929466 Semiconductor device and method of fabricating the same Jul. 27, 1999
5909040 Semiconductor device including quaternary buffer layer with pinholes Jun. 1, 1999
5844261 InAlGaP devices Dec. 1, 1998
5804834 Semiconductor device having contact resistance reducing layer Sep. 8, 1998
5798540 Electronic devices with InAlAsSb/AlSb barrier Aug. 25, 1998
5760426 Heteroepitaxial semiconductor device including silicon substrate, GaAs layer and GaN layer #13 Jun. 2, 1998
5729030 Semiconductor device Mar. 17, 1998
5721161 Method of making high-speed, low-noise millimeterwave HEMT and pseudormorphic HEMT Feb. 24, 1998
5663583 Low-noise and power ALGaPSb/GaInAs HEMTs and pseudomorpohic HEMTs on GaAs substrate Sep. 2, 1997
5650638 Semiconductor device having a passivation layer Jul. 22, 1997
5612551 AlPSb/InP single heterojunction bipolar transistor on InP substrate for high-speed, high-power applications Mar. 18, 1997
5612550 Heterojunction type semiconductor device having ordered phase alloy layers for active and cladding layers Mar. 18, 1997

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