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Class Information
Number: 257/E29.09
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by materials of semiconductor body (epo) > Only group iii-v compounds (epo) > Including two or more compounds (e.g., alloys) (epo)
Description: This subclass is indented under subclass E29.089. This subclass is substantially the same in scope as ECLA classification H01L29/201.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7279398 |
Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces |
Oct. 9, 2007 |
| 7242041 |
Field-effect transistors with weakly coupled layered inorganic semiconductors |
Jul. 10, 2007 |
| 7018728 |
Boron phosphide-based semiconductor device and production method thereof |
Mar. 28, 2006 |
| 6903364 |
Semiconductor structures using a group III-nitride material system with reduced phase separation and method of fabrication |
Jun. 7, 2005 |
| 6841409 |
Group III-V compound semiconductor and group III-V compound semiconductor device using the same |
Jan. 11, 2005 |
| 6806512 |
InPSb/InAs BJT device and method of making |
Oct. 19, 2004 |
| 6797533 |
Quantum well intermixing in InGaAsP structures induced by low temperature grown InP |
Sep. 28, 2004 |
| 6797990 |
Boron phosphide-based semiconductor device and production method thereof |
Sep. 28, 2004 |
| 6611007 |
Method for locally modifying the effective bandgap energy in indium gallium arsenide phosphide (InGaAsP) quantum well structures |
Aug. 26, 2003 |
| 6521917 |
Semiconductor structures using a group III-nitride quaternary material system with reduced phase separation |
Feb. 18, 2003 |
| 6501105 |
Compound semiconductor device |
Dec. 31, 2002 |
| 6482711 |
InPSb/InAs BJT device and method of making |
Nov. 19, 2002 |
| 6472298 |
Layered group III-V compound semiconductor, method of manufacturing the same and light emitting element |
Oct. 29, 2002 |
| 6417519 |
Field effect transistor with suppressed threshold change |
Jul. 9, 2002 |
| 6350997 |
Semiconductor light emitting element |
Feb. 26, 2002 |
| 6346720 |
Layered group III-V compound semiconductor, method of manufacturing the same, and light emitting element |
Feb. 12, 2002 |
| 6232624 |
InPSb channel HEMT on InP for RF application |
May. 15, 2001 |
| 6177685 |
Nitride-type III-V HEMT having an InN 2DEG channel layer |
Jan. 23, 2001 |
| 6144045 |
High power devices based on gallium nitride and aluminum gallium nitride semiconductor heterostructures |
Nov. 7, 2000 |
| 5981980 |
Semiconductor laminating structure |
Nov. 9, 1999 |
| 5977612 |
Semiconductor devices constructed from crystallites |
Nov. 2, 1999 |
| 5929466 |
Semiconductor device and method of fabricating the same |
Jul. 27, 1999 |
| 5909040 |
Semiconductor device including quaternary buffer layer with pinholes |
Jun. 1, 1999 |
| 5844261 |
InAlGaP devices |
Dec. 1, 1998 |
| 5804834 |
Semiconductor device having contact resistance reducing layer |
Sep. 8, 1998 |
| 5798540 |
Electronic devices with InAlAsSb/AlSb barrier |
Aug. 25, 1998 |
| 5760426 |
Heteroepitaxial semiconductor device including silicon substrate, GaAs layer and GaN layer #13 |
Jun. 2, 1998 |
| 5729030 |
Semiconductor device |
Mar. 17, 1998 |
| 5721161 |
Method of making high-speed, low-noise millimeterwave HEMT and pseudormorphic HEMT |
Feb. 24, 1998 |
| 5663583 |
Low-noise and power ALGaPSb/GaInAs HEMTs and pseudomorpohic HEMTs on GaAs substrate |
Sep. 2, 1997 |
| 5650638 |
Semiconductor device having a passivation layer |
Jul. 22, 1997 |
| 5612551 |
AlPSb/InP single heterojunction bipolar transistor on InP substrate for high-speed, high-power applications |
Mar. 18, 1997 |
| 5612550 |
Heterojunction type semiconductor device having ordered phase alloy layers for active and cladding layers |
Mar. 18, 1997 |
| 5610086 |
Method of making an AlPSb/InP single heterojunction bipolar transistor on InP substrate for high-speed, high-power applications |
Mar. 11, 1997 |
| 5548140 |
High-Speed, low-noise millimeterwave hemt and pseudomorphic hemt |
Aug. 20, 1996 |
| 5483088 |
Compounds and infrared devices including In.sub.1-x Tl.sub.x Q, where Q is As.sub.1-y P.sub.y and 0.ltoreq.y.ltoreq.1 |
Jan. 9, 1996 |
| 5430310 |
Field effect transistor |
Jul. 4, 1995 |
| 5421910 |
Intermetallic compound semiconductor thin film |
Jun. 6, 1995 |
| 5389571 |
Method of fabricating a gallium nitride based semiconductor device with an aluminum and nitrogen containing intermediate layer |
Feb. 14, 1995 |
| 5239188 |
Gallium nitride base semiconductor device |
Aug. 24, 1993 |
| 5041882 |
Heterojunction bipolar transistor |
Aug. 20, 1991 |
| 4829343 |
Hot electron transistor |
May. 9, 1989 |
| 4777517 |
Compound semiconductor integrated circuit device |
Oct. 11, 1988 |
| 4745447 |
Gallium arsenide on gallium indium arsenide Schottky barrier device |
May. 17, 1988 |
| 4697202 |
Integrated circuit having dislocation free substrate |
Sep. 29, 1987 |
| 4468851 |
Process for making a heterojunction source-drain insulated gate field-effect transistors utilizing diffusion to form the lattice |
Sep. 4, 1984 |
| 4383872 |
Method of growing a doped III-V alloy layer by molecular beam epitaxy utilizing a supplemental molecular beam of lead |
May. 17, 1983 |
| 4366493 |
Semiconductor ballistic transport device |
Dec. 28, 1982 |
| 4238232 |
Metallic modified material of intermetallic compound |
Dec. 9, 1980 |
| 4225409 |
Metallic modified material of intermetallic compound and a process for the production of the same |
Sep. 30, 1980 |
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