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Class Information
Number: 257/E29.089
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by materials of semiconductor body (epo) > Only group iii-v compounds (epo)
Description: This subclass is indented under subclass E29.068. This subclass is substantially the same in scope as ECLA classification H01L29/20.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.092 Amorphous materials (epo) 13
257/E29.093 Further characterized by doping material (epo) 91
257/E29.09 Including two or more compounds (e.g., alloys) (epo) 70


Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8709846 Solid state lighting devices and associated methods of manufacturing Apr. 29, 2014
8709923 Method of manufacturing III-nitride crystal Apr. 29, 2014
8703623 Fabrication technique for gallium nitride substrates Apr. 22, 2014
8685774 Method for fabricating three-dimensional gallium nitride structures with planar surfaces Apr. 1, 2014
8680535 High electron mobility transistor structure with improved breakdown voltage performance Mar. 25, 2014
8680581 Method for producing group III nitride semiconductor and template substrate Mar. 25, 2014
8680554 Epitaxial structure and method for making the same Mar. 25, 2014
8679942 Strain engineered composite semiconductor substrates and methods of forming same Mar. 25, 2014
8674398 Group III nitride semiconductor light emitting device and production method thereof, and lamp Mar. 18, 2014
8674408 Reducing source/drain resistance of III-V based transistors Mar. 18, 2014
8664664 Silicon carbide dimpled substrate Mar. 4, 2014
8659031 Method of producing template for epitaxial growth and nitride semiconductor device Feb. 25, 2014
8647901 Method for forming a nitride semiconductor layer and method for separating the nitride semiconductor layer from the substrate Feb. 11, 2014
8648349 Semiconductor device Feb. 11, 2014
8648459 Nitride based semiconductor package and method of manufacturing the same and bonding substrate Feb. 11, 2014
8643024 In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N Feb. 4, 2014
8637383 Strain relaxation using metal materials and related structures Jan. 28, 2014
8637848 Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement Jan. 28, 2014
8633493 Large area thin freestanding nitride layers and their use as circuit layers Jan. 21, 2014
8629454 Semiconductor device Jan. 14, 2014
8629455 Power semiconductor device Jan. 14, 2014
8629525 Second contact schottky metal layer to improve GaN schottky diode performance Jan. 14, 2014
8624356 Group III nitride semiconductor substrate production method, and group III nitride semiconductor substrate Jan. 7, 2014
8624261 Nitride semiconductor device Jan. 7, 2014
8603886 Intermediate epitaxial structure and method for fabricating an epitaxial structure Dec. 10, 2013
8592823 Compound semiconductor device and method for manufacturing the same Nov. 26, 2013
8592825 Semiconductor device having Si-substrate and process to form the same Nov. 26, 2013
8575659 Carbon-beryllium combinationally doped semiconductor Nov. 5, 2013
8574364 GaN-crystal free-standing substrate and method for producing the same Nov. 5, 2013
8569842 Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices Oct. 29, 2013
8563984 Semiconductor device Oct. 22, 2013
8558242 Vertical GaN-based metal insulator semiconductor FET Oct. 15, 2013
8546817 High temperature strain sensor Oct. 1, 2013
8546166 III nitride crystal substrate, and light-emitting device and method of its manufacture Oct. 1, 2013
8546849 High voltage cascoded III-nitride rectifier package utilizing clips on package surface Oct. 1, 2013
8536622 Semiconductor device and power supply apparatus Sep. 17, 2013
8525184 Semiconductor device and method for manufacturing same Sep. 3, 2013
8524575 Group III nitride crystal and method for producing the same Sep. 3, 2013
8518806 Method for producing group III nitride-based compound semiconductor, wafer including group III nitride-based compound semiconductor, and group III nitrided-based compound semiconductor device Aug. 27, 2013
8507357 Method for lift-off of light-emitting diode substrate Aug. 13, 2013
8502337 Schottky barrier diode and method for manufacturing Schottky barrier diode Aug. 6, 2013
8487409 Indium phosphide substrate manufacturing method, epitaxial wafer manufacturing method indium phosphide substrate, and epitaxial wafer Jul. 16, 2013
8487317 GaN semiconductor device Jul. 16, 2013
8482103 Nitride semiconductor template and fabricating method thereof Jul. 9, 2013
8482104 Method for growth of indium-containing nitride films Jul. 9, 2013
8476640 Solid state lighting devices and associated methods of manufacturing Jul. 2, 2013
8471365 Nitride semiconductor substrate, semiconductor device, and methods for manufacturing nitride semiconductor substrate and semiconductor device Jun. 25, 2013
8471309 Compound semiconductor device and method of manufacturing the same Jun. 25, 2013
8471264 Method of manufacturing GaN substrate, method of manufacturing epitaxialwafer, method of manufacturing semiconductor device and epitaxialwafer Jun. 25, 2013
8466471 Nitride semiconductor free-standing substrate and method for making same Jun. 18, 2013

1 2 3 4










 
 
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