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Class Information
Number: 257/E29.088
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by materials of semiconductor body (epo) > Selenium or tellurium only (epo) > Amorphous materials (epo)
Description: This subclass is indented under subclass E29.087. This subclass is substantially the same in scope as ECLA classification H01L29/18E.










Patents under this class:

Patent Number Title Of Patent Date Issued
8067766 Multi-level memory cell Nov. 29, 2011
7846760 Doped plug for CCD gaps Dec. 7, 2010
7414258 Spacer electrode small pin phase change memory RAM and manufacturing method Aug. 19, 2008











 
 
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