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Class Information
Number: 257/E29.087
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by materials of semiconductor body (epo) > Selenium or tellurium only (epo)
Description: This subclass is indented under subclass E29.068. This subclass is substantially the same in scope as ECLA classification H01L29/18.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.088 Amorphous materials (epo) 3


Patents under this class:

Patent Number Title Of Patent Date Issued
8685783 Phase change memory cell Apr. 1, 2014
8440991 Phase change memory device having a heater with a temperature dependent resistivity, method of manufacturing the same, and circuit of the same May. 14, 2013
8372684 Method and system for selenization in fabricating CIGS/CIS solar cells Feb. 12, 2013
8134139 Programmable metallization cell with ion buffer layer Mar. 13, 2012
7927911 Wafer bonded access device for multi-layer phase change memory using lock-and-key alignment Apr. 19, 2011
7858980 Reduced active area in a phase change memory structure Dec. 28, 2010
7732888 Integrated circuit, method for manufacturing an integrated circuit, memory cell array, memory module, and device Jun. 8, 2010
7642549 Phase change memory cells delineated by regions of modified film resistivity Jan. 5, 2010
7511297 Phase change memory device and method of fabricating the same Mar. 31, 2009
6673648 Isolating phase change material memory cells Jan. 6, 2004
5594263 Semiconductor device containing a semiconducting crystalline nanoporous material Jan. 14, 1997
3935582 Selenium rectifier Jan. 27, 1976











 
 
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