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Class Information
Number: 257/E29.086
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by materials of semiconductor body (epo) > Only element from fourth group of periodic system in uncombined form (epo) > Further characterized by doping material (epo)
Description: This subclass is indented under subclass E29.082. This subclass is substantially the same in scope as ECLA classification H01L29/167.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7622341 |
Sige channel epitaxial development for high-k PFET manufacturability |
Nov. 24, 2009 |
| 7592242 |
Apparatus and method for controlling diffusion |
Sep. 22, 2009 |
| 7211464 |
Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices |
May. 1, 2007 |
| 7064361 |
NPN transistor having reduced extrinsic base resistance and improved manufacturability |
Jun. 20, 2006 |
| 7049198 |
Semiconductor device and method for fabricating the same |
May. 23, 2006 |
| 7030408 |
Molecular wire transistor (MWT) |
Apr. 18, 2006 |
| 7015546 |
Deterministically doped field-effect devices and methods of making same |
Mar. 21, 2006 |
| 7009279 |
Semiconductor device configured for suppressed germanium diffusion from a germanium-doped regions and a method for fabrication thereof |
Mar. 7, 2006 |
| 6897470 |
Supermolecular structureS and devices made from same |
May. 24, 2005 |
| 6867085 |
Insulated gate semiconductor device and method of manufacturing the same |
Mar. 15, 2005 |
| 6838698 |
Semiconductor device having source/channel or drain/channel boundary regions |
Jan. 4, 2005 |
| 6838329 |
High concentration indium fluorine retrograde wells |
Jan. 4, 2005 |
| 6830982 |
Method for reducing extrinsic base resistance and improving manufacturability in an NPN transistor |
Dec. 14, 2004 |
| 6828690 |
Non-uniform minority carrier lifetime distributions in high performance silicon power devices |
Dec. 7, 2004 |
| 6822314 |
Base for a NPN bipolar transistor |
Nov. 23, 2004 |
| 6815736 |
Isoelectronic co-doping |
Nov. 9, 2004 |
| 6784471 |
Semiconductor device and manufacturing method thereof |
Aug. 31, 2004 |
| 6784488 |
Trench-gate semiconductor devices and the manufacture thereof |
Aug. 31, 2004 |
| 6781156 |
Recombination center diffusion controlled by carbon concentration |
Aug. 24, 2004 |
| 6759674 |
Band gap compensated HBT |
Jul. 6, 2004 |
| 6683328 |
Power semiconductor and fabrication method |
Jan. 27, 2004 |
| 6664559 |
Supermolecular structures and devices made from same |
Dec. 16, 2003 |
| 6656774 |
Method to enhance operating characteristics of FET, IGBT, and MCT structures |
Dec. 2, 2003 |
| 6657251 |
Semiconductor memory device having memory transistors with gate electrodes of a double-layer stacked structure and method of fabricating the same |
Dec. 2, 2003 |
| 6635950 |
Semiconductor device having buried boron and carbon regions, and method of manufacture thereof |
Oct. 21, 2003 |
| 6607972 |
Method for producing an edge termination suitable for high voltages in a basic material wafer prefabricated according to the principle of lateral charge compensation |
Aug. 19, 2003 |
| 6597016 |
Semiconductor device and method for fabricating the same |
Jul. 22, 2003 |
| 6596587 |
Shallow junction EEPROM device and process for fabricating the device |
Jul. 22, 2003 |
| 6593640 |
Bipolar transistor and methods of forming bipolar transistors |
Jul. 15, 2003 |
| 6573145 |
Process for producing an MOS field effect transistor with a recombination zone |
Jun. 3, 2003 |
| 6559468 |
Molecular wire transistor (MWT) |
May. 6, 2003 |
| 6507070 |
Semiconductor device and method of making |
Jan. 14, 2003 |
| 6504230 |
Compensation component and method for fabricating the compensation component |
Jan. 7, 2003 |
| 6475887 |
Method of manufacturing semiconductor device |
Nov. 5, 2002 |
| 6465864 |
Diode structure on MOS wafer |
Oct. 15, 2002 |
| 6459140 |
Indium-enhanced bipolar transistor |
Oct. 1, 2002 |
| 6455911 |
Silicon-based semiconductor component with high-efficiency barrier junction termination |
Sep. 24, 2002 |
| 6376860 |
Semiconductor device |
Apr. 23, 2002 |
| 6358807 |
Bipolar semiconductor device and method of forming same having reduced transient enhanced diffusion |
Mar. 19, 2002 |
| 6274466 |
Method of fabricating a semiconductor device |
Aug. 14, 2001 |
| 6221707 |
Method for fabricating a transistor having a variable threshold voltage |
Apr. 24, 2001 |
| 6204153 |
Argon doped epitaxial layers for inhibiting punchthrough within a semiconductor device |
Mar. 20, 2001 |
| 6198115 |
IGBT with reduced forward voltage drop and reduced switching loss |
Mar. 6, 2001 |
| 6198157 |
Semiconductor device having buried boron and carbon regions |
Mar. 6, 2001 |
| 6198141 |
Insulated gate semiconductor device and method of manufacturing the same |
Mar. 6, 2001 |
| 6168981 |
Method and apparatus for the localized reduction of the lifetime of charge carriers, particularly in integrated electronic devices |
Jan. 2, 2001 |
| 6153920 |
Process for controlling dopant diffusion in a semiconductor layer and semiconductor device formed thereby |
Nov. 28, 2000 |
| 6138606 |
Ion implanters for implanting shallow regions with ion dopant compounds containing elements of high solid solubility |
Oct. 31, 2000 |
| 6140213 |
Semiconductor wafer and method of manufacturing same |
Oct. 31, 2000 |
| 6109207 |
Process for fabricating semiconductor device with shallow p-type regions using dopant compounds containing elements of high solid solubility |
Aug. 29, 2000 |
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