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Browse by Category: Main > Physics
Class Information
Number: 257/E29.086
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by materials of semiconductor body (epo) > Only element from fourth group of periodic system in uncombined form (epo) > Further characterized by doping material (epo)
Description: This subclass is indented under subclass E29.082. This subclass is substantially the same in scope as ECLA classification H01L29/167.










Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8586978 Non-volatile memory device including diode-storage node and cross-point memory array including the non-volatile memory device Nov. 19, 2013
8168964 Semiconductor device using graphene and method of manufacturing the same May. 1, 2012
8101508 Silicon substrate and manufacturing method thereof Jan. 24, 2012
7759208 Low temperature ion implantation for improved silicide contacts Jul. 20, 2010
7622341 Sige channel epitaxial development for high-k PFET manufacturability Nov. 24, 2009
7592242 Apparatus and method for controlling diffusion Sep. 22, 2009
7211464 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices May. 1, 2007
7064361 NPN transistor having reduced extrinsic base resistance and improved manufacturability Jun. 20, 2006
7049198 Semiconductor device and method for fabricating the same May. 23, 2006
7030408 Molecular wire transistor (MWT) Apr. 18, 2006
7015546 Deterministically doped field-effect devices and methods of making same Mar. 21, 2006
7009279 Semiconductor device configured for suppressed germanium diffusion from a germanium-doped regions and a method for fabrication thereof Mar. 7, 2006
6897470 Supermolecular structureS and devices made from same May. 24, 2005
6867085 Insulated gate semiconductor device and method of manufacturing the same Mar. 15, 2005
6838329 High concentration indium fluorine retrograde wells Jan. 4, 2005
6838698 Semiconductor device having source/channel or drain/channel boundary regions Jan. 4, 2005
6830982 Method for reducing extrinsic base resistance and improving manufacturability in an NPN transistor Dec. 14, 2004
6828690 Non-uniform minority carrier lifetime distributions in high performance silicon power devices Dec. 7, 2004
6822314 Base for a NPN bipolar transistor Nov. 23, 2004
6815736 Isoelectronic co-doping Nov. 9, 2004
6784488 Trench-gate semiconductor devices and the manufacture thereof Aug. 31, 2004
6784471 Semiconductor device and manufacturing method thereof Aug. 31, 2004
6781156 Recombination center diffusion controlled by carbon concentration Aug. 24, 2004
6759674 Band gap compensated HBT Jul. 6, 2004
6683328 Power semiconductor and fabrication method Jan. 27, 2004
6664559 Supermolecular structures and devices made from same Dec. 16, 2003
6657251 Semiconductor memory device having memory transistors with gate electrodes of a double-layer stacked structure and method of fabricating the same Dec. 2, 2003
6656774 Method to enhance operating characteristics of FET, IGBT, and MCT structures Dec. 2, 2003
6635950 Semiconductor device having buried boron and carbon regions, and method of manufacture thereof Oct. 21, 2003
6607972 Method for producing an edge termination suitable for high voltages in a basic material wafer prefabricated according to the principle of lateral charge compensation Aug. 19, 2003
6597016 Semiconductor device and method for fabricating the same Jul. 22, 2003
6596587 Shallow junction EEPROM device and process for fabricating the device Jul. 22, 2003
6593640 Bipolar transistor and methods of forming bipolar transistors Jul. 15, 2003
6573145 Process for producing an MOS field effect transistor with a recombination zone Jun. 3, 2003
6559468 Molecular wire transistor (MWT) May. 6, 2003
6507070 Semiconductor device and method of making Jan. 14, 2003
6504230 Compensation component and method for fabricating the compensation component Jan. 7, 2003
6475887 Method of manufacturing semiconductor device Nov. 5, 2002
6465864 Diode structure on MOS wafer Oct. 15, 2002
6459140 Indium-enhanced bipolar transistor Oct. 1, 2002
6455911 Silicon-based semiconductor component with high-efficiency barrier junction termination Sep. 24, 2002
6376860 Semiconductor device Apr. 23, 2002
6358807 Bipolar semiconductor device and method of forming same having reduced transient enhanced diffusion Mar. 19, 2002
6274466 Method of fabricating a semiconductor device Aug. 14, 2001
6221707 Method for fabricating a transistor having a variable threshold voltage Apr. 24, 2001
6204153 Argon doped epitaxial layers for inhibiting punchthrough within a semiconductor device Mar. 20, 2001
6198141 Insulated gate semiconductor device and method of manufacturing the same Mar. 6, 2001
6198115 IGBT with reduced forward voltage drop and reduced switching loss Mar. 6, 2001
6198157 Semiconductor device having buried boron and carbon regions Mar. 6, 2001
6168981 Method and apparatus for the localized reduction of the lifetime of charge carriers, particularly in integrated electronic devices Jan. 2, 2001

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