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Browse by Category: Main > Physics
Class Information
Number: 257/E29.085
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by materials of semiconductor body (epo) > Only element from fourth group of periodic system in uncombined form (epo) > Including two or more of elements from fourth group of periodic system (epo) > In different semiconductor regions (e.g., heterojunctions) (epo)
Description: This subclass is indented under subclass E29.084. This subclass is substantially the same in scope as ECLA classification H01L29/165.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8669163 Tunnel field-effect transistors with superlattice channels Mar. 11, 2014
8624334 Strained semiconductor device and method of making the same Jan. 7, 2014
8558285 Method using low temperature wafer bonding to fabricate transistors with heterojunctions of Si(Ge) to III-N materials Oct. 15, 2013
8482043 Method for improving transistor performance through reducing the salicide interface resistance Jul. 9, 2013
8354695 Tunnel field-effect transistor with narrow band-gap channel and strong gate coupling Jan. 15, 2013
8314023 Methods involving memory with high dielectric constant antifuses adapted for use at low voltage Nov. 20, 2012
8124983 Power transistor Feb. 28, 2012
8084784 Semiconductor heterostructure and method for forming same Dec. 27, 2011
8053759 Ion implantation for suppression of defects in annealed SiGe layers Nov. 8, 2011
8026535 Thin film transistor and organic electroluminescence display using the same Sep. 27, 2011
8013424 Semiconductor device and method of fabricating the same Sep. 6, 2011
7973336 Released freestanding strained heterojunction structures Jul. 5, 2011
7842973 Semiconductor device and manufacturing method of the same Nov. 30, 2010
7812370 Tunnel field-effect transistor with narrow band-gap channel and strong gate coupling Oct. 12, 2010
7781805 Memory with high dielectric constant antifuses adapted for use at low voltage Aug. 24, 2010
7750367 Semiconductor member, manufacturing method thereof, and semiconductor device Jul. 6, 2010
7750338 Dual-SiGe epitaxy for MOS devices Jul. 6, 2010
7737534 Semiconductor devices that include germanium nanofilm layer disposed within openings of silicon dioxide layer Jun. 15, 2010
7723749 Strained semiconductor structures May. 25, 2010
7696061 Semiconductor device and method for manufacturing same Apr. 13, 2010
7683397 Semi-planar avalanche photodiode Mar. 23, 2010
7592646 Semiconductor device with a SiGe layer having uniaxial lattice strain Sep. 22, 2009
7238973 Semiconductor member, manufacturing method thereof, and semiconductor device Jul. 3, 2007
7071029 Methods for fabricating final substrates Jul. 4, 2006
7056789 Production method for semiconductor substrate and production method for field effect transistor and semiconductor substrate and field effect transistor Jun. 6, 2006
7049198 Semiconductor device and method for fabricating the same May. 23, 2006
7049678 Diverse band gap energy level semiconductor device May. 23, 2006
7045412 Field-effect type semiconductor device for power amplifier May. 16, 2006
7045407 Amorphous etch stop for the anisotropic etching of substrates May. 16, 2006
7038248 Diverse band gap energy level semiconductor device May. 2, 2006
7023030 MISFET Apr. 4, 2006
7019341 Silicon germanium hetero bipolar transistor having a germanium concentration profile in the base layer Mar. 28, 2006
7005668 Method for improving hole mobility enhancement in strained silicon p-type MOSFETS Feb. 28, 2006
6977400 Silicon germanium CMOS channel Dec. 20, 2005
6933589 Method of making a semiconductor transistor Aug. 23, 2005
6930026 Method of forming a semiconductor wafer having a crystalline layer thereon containing silicon, germanium and carbon Aug. 16, 2005
6927414 High speed lateral heterojunction MISFETs realized by 2-dimensional bandgap engineering and methods thereof Aug. 9, 2005
6924518 Semiconductor device and method of manufacturing the same Aug. 2, 2005
6902967 Integrated circuit with a MOS structure having reduced parasitic bipolar transistor action Jun. 7, 2005
6885084 Semiconductor transistor having a stressed channel Apr. 26, 2005
6867067 Methods for fabricating final substrates Mar. 15, 2005
6867085 Insulated gate semiconductor device and method of manufacturing the same Mar. 15, 2005
6861318 Semiconductor transistor having a stressed channel Mar. 1, 2005
6838728 Buried-channel devices and substrates for fabrication of semiconductor-based devices Jan. 4, 2005
6828628 Diffused MOS devices with strained silicon portions and methods for forming same Dec. 7, 2004
6825507 Semiconductor device having high electron mobility comprising a SiGe/Si/SiGe substrate Nov. 30, 2004
6815707 Field-effect type semiconductor device for power amplifier Nov. 9, 2004
6815735 Semiconductor device Nov. 9, 2004
6812086 Method of making a semiconductor transistor Nov. 2, 2004
6800881 Silicon-germanium hetero bipolar transistor with T-shaped implantation layer between emitter and emitter contact area Oct. 5, 2004

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