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Class Information
Number: 257/E29.084
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by materials of semiconductor body (epo) > Only element from fourth group of periodic system in uncombined form (epo) > Including two or more of elements from fourth group of periodic system (epo)
Description: This subclass is indented under subclass E29.082. This subclass is substantially the same in scope as ECLA classification H01L29/161.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.085 In different semiconductor regions (e.g., heterojunctions) (epo) 134


Patents under this class:
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Patent Number Title Of Patent Date Issued
8710586 SIC semiconductor device and method for manufacturing the same Apr. 29, 2014
8686434 Silicon carbide semiconductor device and method for manufacturing the same Apr. 1, 2014
8674374 Silicon carbide semiconductor device and method for manufacturing same Mar. 18, 2014
8669561 High-voltage semiconductor device Mar. 11, 2014
8659057 Self-aligned semiconductor devices with reduced gate-source leakage under reverse bias and methods of making Feb. 25, 2014
8569842 Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices Oct. 29, 2013
8525189 Silicon carbide semiconductor device Sep. 3, 2013
8525223 Silicon carbide semiconductor device Sep. 3, 2013
8513674 Semiconductor device and method of manufacturing the same Aug. 20, 2013
8501600 Methods for depositing germanium-containing layers Aug. 6, 2013
8377806 Method for controlled growth of silicon carbide and structures produced by same Feb. 19, 2013
8138504 Silicon carbide semiconductor device and method of manufacturing the same Mar. 20, 2012
7928443 Method and structure for forming strained SI for CMOS devices Apr. 19, 2011
7898028 Process for fabricating a strained channel MOSFET device Mar. 1, 2011
7816688 Semiconductor device and production method therefor Oct. 19, 2010
7759208 Low temperature ion implantation for improved silicide contacts Jul. 20, 2010
7700951 Method and structure for forming strained Si for CMOS devices Apr. 20, 2010
7700936 Fabrication of quantum dots embedded in three-dimensional photonic crystal lattice Apr. 20, 2010
7608515 Diffusion layer for stressed semiconductor devices Oct. 27, 2009
7538352 Semiconductor device and power converter, driving inverter, general-purpose inverter and high-power high-frequency communication device using same May. 26, 2009
7429752 Method and structure for forming strained SI for CMOS devices Sep. 30, 2008
7019341 Silicon germanium hetero bipolar transistor having a germanium concentration profile in the base layer Mar. 28, 2006
6972250 Method and structure for ultra-low contact resistance CMOS formed by vertically self-aligned CoSi2 on raised source drain Si/SiGe device Dec. 6, 2005
6905932 Method for constructing a metal oxide semiconductor field effect transistor Jun. 14, 2005
6900463 Semiconductor device May. 31, 2005
6887762 Method of fabricating a field effect transistor structure with abrupt source/drain junctions May. 3, 2005
6872455 Semiconductor material and method for enhancing solubility of a dopant therein Mar. 29, 2005
6821870 Heterojunction bipolar transistor and method for fabricating the same Nov. 23, 2004
6800881 Silicon-germanium hetero bipolar transistor with T-shaped implantation layer between emitter and emitter contact area Oct. 5, 2004
6759674 Band gap compensated HBT Jul. 6, 2004
6753555 DTMOS device having low threshold voltage Jun. 22, 2004
6750484 Silicon germanium hetero bipolar transistor Jun. 15, 2004
6744079 Optimized blocking impurity placement for SiGe HBTs Jun. 1, 2004
6690072 Method and structure for ultra-low contact resistance CMOS formed by vertically self-aligned CoSi2 on raised source drain Si/SiGe device Feb. 10, 2004
6680504 Method for constructing a metal oxide semiconductor field effect transistor Jan. 20, 2004
6674100 SiGeC-based CMOSFET with separate heterojunctions Jan. 6, 2004
6674150 Heterojunction bipolar transistor and method for fabricating the same Jan. 6, 2004
6660393 SiGeC semiconductor crystals and the method producing the same Dec. 9, 2003
6635950 Semiconductor device having buried boron and carbon regions, and method of manufacture thereof Oct. 21, 2003
6627522 Method for enhancing the solubility of dopants in silicon Sep. 30, 2003
6617228 Semiconductor material and method for enhancing solubility of a dopant therein Sep. 9, 2003
6593640 Bipolar transistor and methods of forming bipolar transistors Jul. 15, 2003
6537369 SiGeC semiconductor crystal and production method thereof Mar. 25, 2003
6512252 Semiconductor device Jan. 28, 2003
6498078 Method for enhancing the solubility of boron and indium in silicon Dec. 24, 2002
6492711 Heterojunction bipolar transistor and method for fabricating the same Dec. 10, 2002
6472685 Semiconductor device Oct. 29, 2002
6399970 FET having a Si/SiGeC heterojunction channel Jun. 4, 2002
6355941 Semiconductor device Mar. 12, 2002
6198157 Semiconductor device having buried boron and carbon regions Mar. 6, 2001

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