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Class Information
Number: 257/E29.082
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by materials of semiconductor body (epo) > Only element from fourth group of periodic system in uncombined form (epo)
Description: This subclass is indented under subclass E29.068. This subclass is substantially the same in scope as ECLA classification H01L29/16.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.083 Amorphous materials (epo) 50
257/E29.086 Further characterized by doping material (epo) 211
257/E29.084 Including two or more of elements from fourth group of periodic system (epo) 89


Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8669562 Semiconductor device and method for manufacturing the same Mar. 11, 2014
8618585 Semiconductor apparatus including cooling base with projections Dec. 31, 2013
8592825 Semiconductor device having Si-substrate and process to form the same Nov. 26, 2013
8575666 Method and structure having monolithic heterogeneous integration of compound semiconductors with elemental semiconductor Nov. 5, 2013
8535635 Method of manufacturing carbon cylindrical structures and biopolymer detection device Sep. 17, 2013
8487356 Graphene device and method of manufacturing the same Jul. 16, 2013
8476642 Compound semiconductor device and manufacturing method thereof Jul. 2, 2013
8450813 Fin transistor structure and method of fabricating the same May. 28, 2013
8445973 Fin transistor structure and method of fabricating the same May. 21, 2013
8445320 Graphene channel-based devices and methods for fabrication thereof May. 21, 2013
8441033 Semiconductor device and method of manufacturing semiconductor device May. 14, 2013
8410474 Graphene grown substrate and electronic/photonic integrated circuits using same Apr. 2, 2013
8304814 Power semiconductor device Nov. 6, 2012
8236626 Narrow graphene nanoribbons from carbon nanotubes Aug. 7, 2012
8138501 Switching element and manufacturing method thereof Mar. 20, 2012
8106383 Self-aligned graphene transistor Jan. 31, 2012
8101980 Graphene device and method of manufacturing the same Jan. 24, 2012
8093644 Multiwalled carbon nanotube memory device Jan. 10, 2012
8044379 Well-aligned, high aspect-ratio, high-density silicon nanowires and methods of making the same Oct. 25, 2011
7994511 Semiconductor structure having multilayer of polysilicon and display panel applied with the same Aug. 9, 2011
7943846 Group IV nanoparticles in an oxide matrix and devices made therefrom May. 17, 2011
7858990 Device and process of forming device with pre-patterned trench and graphene-based device structure formed therein Dec. 28, 2010
7858989 Device and process of forming device with device structure formed in trench and graphene layer formed thereover Dec. 28, 2010
7700936 Fabrication of quantum dots embedded in three-dimensional photonic crystal lattice Apr. 20, 2010
7550796 Germanium semiconductor device and method of manufacturing the same Jun. 23, 2009
7508039 Carbon nanotube (CNT) multiplexers, circuits, and actuators Mar. 24, 2009
7482652 Multiwalled carbon nanotube memory device Jan. 27, 2009
7064352 Diamond semiconductor device and method for manufacturing the same Jun. 20, 2006
7020372 Optical devices with engineered nonlinear nanocomposite materials Mar. 28, 2006
7015546 Deterministically doped field-effect devices and methods of making same Mar. 21, 2006
7009253 Method and apparatus for preventing microcircuit thermo-mechanical damage during an ESD event Mar. 7, 2006
6961499 Optical devices with engineered nonlinear nanocomposite materials Nov. 1, 2005
6939754 Isotropic polycrystalline silicon and method for producing same Sep. 6, 2005
6924509 Monoatomic and moncrystalline layer of large size, in diamond type carbon, and method for the manufacture of this layer Aug. 2, 2005
6900463 Semiconductor device May. 31, 2005
6897470 Supermolecular structureS and devices made from same May. 24, 2005
6887762 Method of fabricating a field effect transistor structure with abrupt source/drain junctions May. 3, 2005
6867459 Isotopically pure silicon-on-insulator wafers and method of making same Mar. 15, 2005
6830980 Semiconductor device fabrication methods for inhibiting carbon out-diffusion in wafers having carbon-containing regions Dec. 14, 2004
6819845 Optical devices with engineered nonlinear nanocomposite materials Nov. 16, 2004
6794265 Methods of forming quantum dots of Group IV semiconductor materials Sep. 21, 2004
6780786 Method for producing a porous silicon film Aug. 24, 2004
6776841 Method for fabricating a semiconductor epitaxial wafer having doped carbon and a semiconductor epitaxial wafer Aug. 17, 2004
6774435 Semiconductor wafer and semiconductor device comprising gettering layer Aug. 10, 2004
6759310 Method for making a semiconductor substrate comprising a variant porous layer Jul. 6, 2004
6756086 Method for the fabrication of a diamond semiconductor Jun. 29, 2004
6727171 Diamond pn junction diode and method for the fabrication thereof Apr. 27, 2004
6677624 Carbon nanotubes transistor Jan. 13, 2004
6667492 Quantum ridges and tips Dec. 23, 2003
6664559 Supermolecular structures and devices made from same Dec. 16, 2003

1 2 3 4










 
 
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