| |
 |
|
Class Information
Number: 257/E29.081
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by materials of semiconductor body (epo) > Two or more elements from two or more groups of periodic table of elements (e.g., alloys) (epo) > In different semiconductor regions (e.g., heterojunctions) (epo)
Description: This subclass is indented under subclass E29.079. This subclass is substantially the same in scope as ECLA classification H01L29/267.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7405430 |
Highly uniform group III nitride epitaxial layers on 100 millimeter diameter silicon carbide substrates |
Jul. 29, 2008 |
| 7348606 |
Nitride-based heterostructure devices |
Mar. 25, 2008 |
| 7304330 |
Nitride semiconductor device |
Dec. 4, 2007 |
| 7233041 |
Large-area nanoenabled macroelectronic substrates and uses therefor |
Jun. 19, 2007 |
| 7112830 |
Super lattice modification of overlying transistor |
Sep. 26, 2006 |
| 7071029 |
Methods for fabricating final substrates |
Jul. 4, 2006 |
| 7061047 |
Semiconductor device having trench gate structure and manufacturing method thereof |
Jun. 13, 2006 |
| 7057204 |
III-V group nitride system semiconductor substrate |
Jun. 6, 2006 |
| 7049678 |
Diverse band gap energy level semiconductor device |
May. 23, 2006 |
| 7038248 |
Diverse band gap energy level semiconductor device |
May. 2, 2006 |
| 7019340 |
Bipolar transistor device and method for fabricating the same |
Mar. 28, 2006 |
| 7015494 |
Assemblies displaying differential negative resistance |
Mar. 21, 2006 |
| 7002179 |
ZnO system semiconductor device |
Feb. 21, 2006 |
| 6936900 |
Integrated transistor devices |
Aug. 30, 2005 |
| 6867067 |
Methods for fabricating final substrates |
Mar. 15, 2005 |
| 6828628 |
Diffused MOS devices with strained silicon portions and methods for forming same |
Dec. 7, 2004 |
| 6759719 |
Edge termination for silicon power devices |
Jul. 6, 2004 |
| 6686646 |
Diverse band gap energy level semiconductor device |
Feb. 3, 2004 |
| 6657278 |
Diverse band gap energy level semiconductor device |
Dec. 2, 2003 |
| 6600177 |
Boron-carbide and boron rich rhombohedral based transistors and tunnel diodes |
Jul. 29, 2003 |
| 6583454 |
Nitride based transistors on semi-insulating silicon carbide substrates |
Jun. 24, 2003 |
| 6545298 |
Compound semiconductor rectifier device structure |
Apr. 8, 2003 |
| 6534347 |
Edge termination for silicon power devices |
Mar. 18, 2003 |
| 6531748 |
Semiconductor power component with a reduced parasitic bipolar transistor |
Mar. 11, 2003 |
| 6528829 |
Integrated circuit structure having a charge injection barrier |
Mar. 4, 2003 |
| 6504184 |
Superior silicon carbide integrated circuits and method of fabricating |
Jan. 7, 2003 |
| 6486502 |
Nitride based transistors on semi-insulating silicon carbide substrates |
Nov. 26, 2002 |
| 6451711 |
Epitaxial wafer apparatus |
Sep. 17, 2002 |
| 6445015 |
Metal sulfide semiconductor transistor devices |
Sep. 3, 2002 |
| 6440786 |
Boron-carbide and boron rich rhobohedral based transistors and tunnel diodes |
Aug. 27, 2002 |
| 6423990 |
Vertical heterojunction bipolar transistor |
Jul. 23, 2002 |
| 6403874 |
High-efficiency heterostructure thermionic coolers |
Jun. 11, 2002 |
| 6380601 |
Multilayer semiconductor structure with phosphide-passivated germanium substrate |
Apr. 30, 2002 |
| 6362026 |
Edge termination for silicon power devices |
Mar. 26, 2002 |
| 6323414 |
Heterostructure thermionic coolers |
Nov. 27, 2001 |
| 6316793 |
Nitride based transistors on semi-insulating silicon carbide substrates |
Nov. 13, 2001 |
| 6303508 |
Superior silicon carbide integrated circuits and method of fabricating |
Oct. 16, 2001 |
| 6273950 |
SiC device and method for manufacturing the same |
Aug. 14, 2001 |
| 6271544 |
SiC/Si heterostructure semiconductor switch and fabrication thereof |
Aug. 7, 2001 |
| 6246077 |
Semiconductor device |
Jun. 12, 2001 |
| 6242784 |
Edge termination for silicon power devices |
Jun. 5, 2001 |
| 6214107 |
Method for manufacturing a SiC device |
Apr. 10, 2001 |
| 6204522 |
Switching device |
Mar. 20, 2001 |
| 6194741 |
MOSgated trench type power semiconductor with silicon carbide substrate and increased gate breakdown voltage and reduced on-resistance |
Feb. 27, 2001 |
| 6187641 |
Lateral MOSFET having a barrier between the source/drain region and the channel region using a heterostructure raised source/drain region |
Feb. 13, 2001 |
| 6171920 |
Method of forming heterojunction bipolar transistor having wide bandgap, low interdiffusion base-emitter junction |
Jan. 9, 2001 |
| 6124627 |
Lateral MOSFET having a barrier between the source/drain region and the channel region using a heterostructure raised source/drain region |
Sep. 26, 2000 |
| 6077760 |
Structure and method of manufacturing single-crystal silicon carbide/single-crystal silicon heterojunctions with negative differential resistance characteristics |
Jun. 20, 2000 |
| 6064316 |
Electrical/mechanical access control systems and methods |
May. 16, 2000 |
| 6060331 |
Method for making heterostructure thermionic coolers |
May. 9, 2000 |
|
|
|
