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Class Information
Number: 257/E29.081
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by materials of semiconductor body (epo) > Two or more elements from two or more groups of periodic table of elements (e.g., alloys) (epo) > In different semiconductor regions (e.g., heterojunctions) (epo)
Description: This subclass is indented under subclass E29.079. This subclass is substantially the same in scope as ECLA classification H01L29/267.










Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8685841 Methods for the production of nanoscale heterostructures Apr. 1, 2014
8653616 Photoelectric conversion device Feb. 18, 2014
8633514 Group III nitride semiconductor wafer and group III nitride semiconductor device Jan. 21, 2014
8633466 Compound semiconductor device, method for producing the same, and power supply Jan. 21, 2014
8633471 Apparatus and methods for forming a modulation doped non-planar transistor Jan. 21, 2014
8629478 Fin structure for high mobility multiple-gate transistor Jan. 14, 2014
8618556 FinFET design and method of fabricating same Dec. 31, 2013
8558285 Method using low temperature wafer bonding to fabricate transistors with heterojunctions of Si(Ge) to III-N materials Oct. 15, 2013
8507952 Semiconductor wafer, semiconductor device, and method for producing semiconductor wafer Aug. 13, 2013
8492771 Heterojunction semiconductor device and method Jul. 23, 2013
8441036 Semiconductor device and method of manufacturing the same May. 14, 2013
8426892 Compound semiconductor device and method of manufacturing the same Apr. 23, 2013
8399314 p-FET with a strained nanowire channel and embedded SiGe source and drain stressors Mar. 19, 2013
8399912 III-nitride power device with solderable front metal Mar. 19, 2013
8314023 Methods involving memory with high dielectric constant antifuses adapted for use at low voltage Nov. 20, 2012
8188553 Semiconductor device and method for making the same May. 29, 2012
8148718 Low voltage transistors Apr. 3, 2012
8148751 Group III nitride semiconductor wafer and group III nitride semiconductor device Apr. 3, 2012
8120063 Modulation-doped multi-gate devices Feb. 21, 2012
8067776 Method of manufacturing semiconductor device and semiconductor device manufactured thereof Nov. 29, 2011
8053320 Semiconductor device and manufacturing method thereof Nov. 8, 2011
8035128 Semiconductor device and method for fabricating the same Oct. 11, 2011
8003452 Compound semiconductor device and manufacturing method thereof Aug. 23, 2011
7989851 Multifunctional biosensor based on ZnO nanostructures Aug. 2, 2011
7968911 Relaxation of a strained layer using a molten layer Jun. 28, 2011
7964869 Memory element, memory apparatus, and semiconductor integrated circuit Jun. 21, 2011
7935985 N-face high electron mobility transistors with low buffer leakage and low parasitic resistance May. 3, 2011
7923752 Thin-film crystal wafer having pn junction and method for fabricating the wafer Apr. 12, 2011
7859015 Semiconductor device Dec. 28, 2010
7851841 Large-area nanoenabled macroelectronic substrates and uses therefor Dec. 14, 2010
7795044 Electronically scannable multiplexing device Sep. 14, 2010
7781805 Memory with high dielectric constant antifuses adapted for use at low voltage Aug. 24, 2010
7750369 Nitride semiconductor device Jul. 6, 2010
7700936 Fabrication of quantum dots embedded in three-dimensional photonic crystal lattice Apr. 20, 2010
7683397 Semi-planar avalanche photodiode Mar. 23, 2010
7573059 Dislocation-free InSb quantum well structure on Si using novel buffer architecture Aug. 11, 2009
7566922 Field effect transistor with suitable source, drain and channel materials and integrated circuit comprising same Jul. 28, 2009
7531889 Epitaxial substrate and semiconductor element May. 12, 2009
7456442 Super lattice modification of overlying transistor Nov. 25, 2008
7405430 Highly uniform group III nitride epitaxial layers on 100 millimeter diameter silicon carbide substrates Jul. 29, 2008
7348606 Nitride-based heterostructure devices Mar. 25, 2008
7304330 Nitride semiconductor device Dec. 4, 2007
7233041 Large-area nanoenabled macroelectronic substrates and uses therefor Jun. 19, 2007
7112830 Super lattice modification of overlying transistor Sep. 26, 2006
7071029 Methods for fabricating final substrates Jul. 4, 2006
7061047 Semiconductor device having trench gate structure and manufacturing method thereof Jun. 13, 2006
7057204 III-V group nitride system semiconductor substrate Jun. 6, 2006
7049678 Diverse band gap energy level semiconductor device May. 23, 2006
7038248 Diverse band gap energy level semiconductor device May. 2, 2006
7019340 Bipolar transistor device and method for fabricating the same Mar. 28, 2006

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