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Browse by Category: Main > Physics
Class Information
Number: 257/E29.08
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by materials of semiconductor body (epo) > Two or more elements from two or more groups of periodic table of elements (e.g., alloys) (epo) > Amorphous materials (epo)
Description: This subclass is indented under subclass E29.79. This subclass is substantially the same in scope as ECLA classification H01L29/26E.










Patents under this class:

Patent Number Title Of Patent Date Issued
8431927 Thin film transistor, method of manufacturing the same, and organic electroluminescent device including thin film transistor Apr. 30, 2013
8319217 Oxide semiconductor thin film transistor, method of manufacturing the same, and organic electroluminescent device including the same Nov. 27, 2012
8253134 Oxide thin film transistor Aug. 28, 2012
8183659 Integrated circuits having interconnects and heat dissipators based on nanostructures May. 22, 2012
8148707 Ovonic threshold switch film composition for TSLAGS material Apr. 3, 2012
8058645 Thin film transistor, display device, including the same, and associated methods Nov. 15, 2011
8013340 Semiconductor device with semiconductor body and method for the production of a semiconductor device Sep. 6, 2011
7998372 Semiconductor thin film, method for manufacturing the same, thin film transistor, and active-matrix-driven display panel Aug. 16, 2011
7851792 Field-effect transistor Dec. 14, 2010
7835177 Phase change memory cell and method of fabricating Nov. 16, 2010
7812333 Integrated circuit including resistivity changing material having a planarized surface Oct. 12, 2010
7777291 Integrated circuits having interconnects and heat dissipators based on nanostructures Aug. 17, 2010
7700936 Fabrication of quantum dots embedded in three-dimensional photonic crystal lattice Apr. 20, 2010
7663137 Phase change memory cell and method of formation Feb. 16, 2010
7482621 Rewritable nano-surface organic electrical bistable devices Jan. 27, 2009
7420246 Vertical type semiconductor device and method for manufacturing the same Sep. 2, 2008
7391050 Phase change memory device with thermal insulating layers Jun. 24, 2008
7332735 Phase change memory cell and method of formation Feb. 19, 2008
7145172 Thin film transistor array substrate Dec. 5, 2006
6893894 Method of manufacturing a compound semiconductor by heating a layered structure including rare earth transition metal May. 17, 2005
6432521 Group III-V compound semiconductor, and semiconductor device using the compound semiconductor Aug. 13, 2002
5371380 Si- and/or Ge-containing non-single crystalline semiconductor film with an average radius of 3.5 A or less as for microvoids contained therein and a microvoid density 1.times.10.sup.(19) (cm.s Dec. 6, 1994
4254429 Hetero junction semiconductor device Mar. 3, 1981











 
 
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