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Class Information
Number: 257/E29.078
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by materials of semiconductor body (epo) > Structures with periodic or quasi-periodic potential variation, (e.g., multiple quantum wells, superlattices) (epo) > Compositional structures (epo) > With layered structures with quantum effects in vertical direction (epo) > Comprising only semiconductor materials (epo)
Description: This subclass is indented under subclass E 29.076. This subclass is substantially the same in scope as ECLA classification H01L29/15B2C.










Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8421058 Light emitting diode structure having superlattice with reduced electron kinetic energy therein Apr. 16, 2013
8247793 ZnO-based thin film and ZnO-based semiconductor element Aug. 21, 2012
8022392 Semiconductor layer structure with superlattice Sep. 20, 2011
7977666 Quantum dot infrared photodetector apparatus Jul. 12, 2011
7943942 Semiconductor light-emitting device with double-sided passivation May. 17, 2011
7825405 Devices comprising coated semiconductor nanocrystals heterostructures Nov. 2, 2010
7799647 MOSFET device featuring a superlattice barrier layer and method Sep. 21, 2010
7700936 Fabrication of quantum dots embedded in three-dimensional photonic crystal lattice Apr. 20, 2010
7372068 QWIP with electron launcher for reducing dielectric relaxation effect in low background conditions May. 13, 2008
7307271 Nanowire interconnection and nano-scale device applications Dec. 11, 2007
7071119 Method for making a semiconductor device including band-engineered superlattice having 3/1-5/1 germanium layer structure Jul. 4, 2006
7045813 Semiconductor device including a superlattice with regions defining a semiconductor junction May. 16, 2006
7045377 Method for making a semiconductor device including a superlattice and adjacent semiconductor layer with doped regions defining a semiconductor junction May. 16, 2006
7038234 Thermoelectric module with Si/SiGe and B4C/B9C super-lattice legs May. 2, 2006
7033437 Method for making semiconductor device including band-engineered superlattice Apr. 25, 2006
7034329 Semiconductor device including band-engineered superlattice having 3/1-5/1 germanium layer structure Apr. 25, 2006
7018900 Method for making a semiconductor device comprising a superlattice channel vertically stepped above source and drain regions Mar. 28, 2006
7015120 Method of fabricating semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation Mar. 21, 2006
7012554 Thermoelectric vehicle tracking device Mar. 14, 2006
6995407 Photonic digital-to-analog converter employing a plurality of heterojunction thyristor devices Feb. 7, 2006
6992318 Semiconductor device having superlattice semiconductor layer and method of manufacturing the same Jan. 31, 2006
6989553 Semiconductor device having an active region of alternating layers Jan. 24, 2006
6982441 Semiconductor device with a super lattice buffer Jan. 3, 2006
6974969 P-type quantum-well-base bipolar transistor device employing interdigitated base and emitter formed with a capping layer Dec. 13, 2005
6958486 Semiconductor device including band-engineered superlattice Oct. 25, 2005
6953740 Highly doped III-nitride semiconductors Oct. 11, 2005
6953955 InGaAs/GaAs high electron mobility transistor Oct. 11, 2005
6954473 Optoelectronic device employing at least one semiconductor heterojunction thyristor for producing variable electrical/optical delay Oct. 11, 2005
6952018 Semiconductor device including band-engineered superlattice Oct. 4, 2005
6936838 Nitride-based semiconductor device Aug. 30, 2005
6927413 Semiconductor device including band-engineered superlattice Aug. 9, 2005
6914343 Thermoelectric power from environmental temperature cycles Jul. 5, 2005
6897472 Semiconductor device including MOSFET having band-engineered superlattice May. 24, 2005
6891188 Semiconductor device including band-engineered superlattice May. 10, 2005
6888170 Highly doped III-nitride semiconductors May. 3, 2005
6878576 Method for making semiconductor device including band-engineered superlattice Apr. 12, 2005
6876013 Compound semiconductor multilayer structure and bipolar transistor using the same Apr. 5, 2005
6873273 Photonic serial digital-to-analog converter employing a heterojunction thyristor device Mar. 29, 2005
6856005 Semiconductor device having a nitride-based hetero-structure and method of manufacturing the same Feb. 15, 2005
6853014 Optoelectronic circuit employing a heterojunction thyristor device that performs high speed sampling Feb. 8, 2005
6852602 Semiconductor crystal film and method for preparation thereof Feb. 8, 2005
6847046 Light-emitting device and method for manufacturing the same Jan. 25, 2005
6841806 Heterojunction thyristor-based amplifier Jan. 11, 2005
6841795 Semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation Jan. 11, 2005
6833294 Method for making semiconductor device including band-engineered superlattice Dec. 21, 2004
6830964 Method for making semiconductor device including band-engineered superlattice Dec. 14, 2004
6828579 Thermoelectric device with Si/SiC superlattice N-legs Dec. 7, 2004
6821800 Semiconductor light-emitting device and manufacturing method thereof Nov. 23, 2004
6797533 Quantum well intermixing in InGaAsP structures induced by low temperature grown InP Sep. 28, 2004
6768141 Heterojunction bipolar transistor (HBT) having improved emitter-base grading structure Jul. 27, 2004

1 2 3 4










 
 
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