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Class Information
Number: 257/E29.076
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by materials of semiconductor body (epo) > Structures with periodic or quasi-periodic potential variation, (e.g., multiple quantum wells, superlattices) (epo) > Compositional structures (epo) > With layered structures with quantum effects in vertical direction (epo)
Description: This subclass is indented under subclass E29.075. This subclass is substantially the same in scope as ECLA classification H01L29/15B2.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7405422 |
Epitaxial and polycrystalline growth of Si.sub.1-x-yGe.sub.xC.sub.y and Si.sub.1-yC.sub.y alloy layers on Si by UHV-CVD |
Jul. 29, 2008 |
| 7339218 |
Semiconductor memory device and method of manufacturing the same |
Mar. 4, 2008 |
| 7183602 |
Ferroelectric capacitor hydrogen barriers and methods for fabricating the same |
Feb. 27, 2007 |
| 7042090 |
Electronic device and method of fabricating the same |
May. 9, 2006 |
| 7026693 |
Insulating film and electronic device |
Apr. 11, 2006 |
| 5055887 |
FET with a super lattice channel |
Oct. 8, 1991 |
| 5021839 |
FET with a super lattice channel |
Jun. 4, 1991 |
| 5008211 |
Method for forming FET with a super lattice channel |
Apr. 16, 1991 |
| 4988634 |
Method for forming FET with a super lattice channel |
Jan. 29, 1991 |
| 4987458 |
Semiconductor biased superlattice tunable interference filter/emitter |
Jan. 22, 1991 |
| 4985737 |
Solid state quantum mechanical electron and hole wave devices |
Jan. 15, 1991 |
| 4970563 |
Semiconductor quantum well electron and hole waveguides |
Nov. 13, 1990 |
| 4908678 |
FET with a super lattice channel |
Mar. 13, 1990 |
| 4797722 |
Hot charge-carrier transistors |
Jan. 10, 1989 |
| 4792832 |
Superlattice semiconductor having high carrier density |
Dec. 20, 1988 |
| 4712121 |
High-speed semiconductor device |
Dec. 8, 1987 |
| 4695857 |
Superlattice semiconductor having high carrier density |
Sep. 22, 1987 |
| 4665412 |
Coupled heterostructure superlattice devices |
May. 12, 1987 |
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