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Class Information
Number: 257/E29.075
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by materials of semiconductor body (epo) > Structures with periodic or quasi-periodic potential variation, (e.g., multiple quantum wells, superlattices) (epo) > Compositional structures (epo)
Description: This subclass is indented under subclass E29.072. This subclass is substantially the same in scope as ECLA classification H01L29/15B.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.076 With layered structures with quantum effects in vertical direction (epo) 37


Patents under this class:

Patent Number Title Of Patent Date Issued
8421058 Light emitting diode structure having superlattice with reduced electron kinetic energy therein Apr. 16, 2013
8247793 ZnO-based thin film and ZnO-based semiconductor element Aug. 21, 2012
8188458 Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices May. 29, 2012
7977666 Quantum dot infrared photodetector apparatus Jul. 12, 2011
7812339 Method for making a semiconductor device including shallow trench isolation (STI) regions with maskless superlattice deposition following STI formation and related structures Oct. 12, 2010
7781827 Semiconductor device with a vertical MOSFET including a superlattice and related methods Aug. 24, 2010
7700936 Fabrication of quantum dots embedded in three-dimensional photonic crystal lattice Apr. 20, 2010
7649212 Active semiconductor component with a reduced surface area Jan. 19, 2010
7071119 Method for making a semiconductor device including band-engineered superlattice having 3/1-5/1 germanium layer structure Jul. 4, 2006
7045813 Semiconductor device including a superlattice with regions defining a semiconductor junction May. 16, 2006
7045377 Method for making a semiconductor device including a superlattice and adjacent semiconductor layer with doped regions defining a semiconductor junction May. 16, 2006
7034329 Semiconductor device including band-engineered superlattice having 3/1-5/1 germanium layer structure Apr. 25, 2006
6952018 Semiconductor device including band-engineered superlattice Oct. 4, 2005
6690027 Method for making a device comprising layers of planes of quantum dots Feb. 10, 2004
5932899 Semiconductor having enhanced acceptor activation Aug. 3, 1999
5298108 Serpentine superlattice methods and devices Mar. 29, 1994
5216262 Quantum well structures useful for semiconductor devices Jun. 1, 1993
5113072 Device having superlattice structure, and method of and apparatus for manufacturing the same May. 12, 1992
5070375 Semiconductor device having a coupled quantum box array structure Dec. 3, 1991
5013683 Method for growing tilted superlattices May. 7, 1991
4983540 Method of manufacturing devices having superlattice structures Jan. 8, 1991
4969018 Quantum-well logic using self-generated potentials Nov. 6, 1990
4912531 Three-terminal quantum device Mar. 27, 1990
4835578 Semiconductor device having a quantum wire and a method of producing the same May. 30, 1989
4769644 Cellular automata devices Sep. 6, 1988
4733282 One-dimensional quantum pipeline type carrier path semiconductor devices Mar. 22, 1988
4704622 Negative transconductance device Nov. 3, 1987
4591889 Superlattice geometry and devices May. 27, 1986
4261771 Method of fabricating periodic monolayer semiconductor structures by molecular beam epitaxy Apr. 14, 1981
4205329 Periodic monolayer semiconductor structures grown by molecular beam epitaxy May. 27, 1980
4103312 Semiconductor memory devices Jul. 25, 1978











 
 
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