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Class Information
Number: 257/E29.074
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by materials of semiconductor body (epo) > Structures with periodic or quasi-periodic potential variation, (e.g., multiple quantum wells, superlattices) (epo) > Structures without potential periodicity in direction perpendicular to major surface of substrate (e.g., lateral superlattice) (epo)
Description: This subclass is indented under subclass E29.072. This subclass is substantially the same in scope as ECLA classification H01L29/15D.










Patents under this class:

Patent Number Title Of Patent Date Issued
8421058 Light emitting diode structure having superlattice with reduced electron kinetic energy therein Apr. 16, 2013
8247793 ZnO-based thin film and ZnO-based semiconductor element Aug. 21, 2012
7977666 Quantum dot infrared photodetector apparatus Jul. 12, 2011
7700936 Fabrication of quantum dots embedded in three-dimensional photonic crystal lattice Apr. 20, 2010
7230310 Super-junction voltage sustaining layer with alternating semiconductor and High-K dielectric regions Jun. 12, 2007
6867085 Insulated gate semiconductor device and method of manufacturing the same Mar. 15, 2005
6617647 Insulated gate semiconductor device and method of manufacturing the same Sep. 9, 2003
6218714 Insulated gate semiconductor device and method of manufacturing the same Apr. 17, 2001
6198141 Insulated gate semiconductor device and method of manufacturing the same Mar. 6, 2001
6020605 Quantum box structure and carrier conductivity modulating device Feb. 1, 2000
5932899 Semiconductor having enhanced acceptor activation Aug. 3, 1999
5831294 Quantum box structure and carrier conductivity modulating device Nov. 3, 1998
5612550 Heterojunction type semiconductor device having ordered phase alloy layers for active and cladding layers Mar. 18, 1997
5523585 Semiconductor device having a superlattice structure Jun. 4, 1996
5455441 Semiconductor device having a structure for accelerating carriers Oct. 3, 1995
5070375 Semiconductor device having a coupled quantum box array structure Dec. 3, 1991
5054030 Grid-inserted quantum structure Oct. 1, 1991
5040032 Semiconductor superlattice heterostructures on non-planar substrates Aug. 13, 1991
5023671 Microstructures which provide superlattice effects and one-dimensional carrier gas channels Jun. 11, 1991
5013683 Method for growing tilted superlattices May. 7, 1991
5012304 Semiconductor devices having strain-induced lateral confinement of charge carriers Apr. 30, 1991
4989052 Quantum effect semiconductor device Jan. 29, 1991
4974036 Semiconductor superlattice heterostructures on nonplanar substrates Nov. 27, 1990
4969018 Quantum-well logic using self-generated potentials Nov. 6, 1990
4912531 Three-terminal quantum device Mar. 27, 1990
4872038 Lateral surface superlattice having negative differential conductivity novel process for producing same Oct. 3, 1989
4799087 Field effect transistor Jan. 17, 1989
4796068 Semiconductor device having ultrahigh-mobility Jan. 3, 1989
4783427 Process for fabricating quantum-well devices Nov. 8, 1988
4751194 Structures including quantum well wires and boxes Jun. 14, 1988
4591889 Superlattice geometry and devices May. 27, 1986
4575924 Process for fabricating quantum-well devices utilizing etch and refill techniques Mar. 18, 1986
4503447 Multi-dimensional quantum well device Mar. 5, 1985











 
 
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