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Class Information
Number: 257/E29.073
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by materials of semiconductor body (epo) > Structures with periodic or quasi-periodic potential variation, (e.g., multiple quantum wells, superlattices) (epo) > Doping structures (e.g., doping superlattices, nipi-superlattices) (epo)
Description: This subclass is indented under subclass E29.072. This subclass is substantially the same in scope as ECLA classification H01L29/15C.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6369438 |
Semiconductor device and method for manufacturing the same |
Apr. 9, 2002 |
| 5834792 |
Articles comprising doped semiconductor material |
Nov. 10, 1998 |
| 5670796 |
Semiconductor device consisting of a semiconductor material having a deep impurity level |
Sep. 23, 1997 |
| 5408107 |
Semiconductor device apparatus having multiple current-voltage curves and zero-bias memory |
Apr. 18, 1995 |
| 5373186 |
Bipolar transistor with monoatomic base layer between emitter and collector layers |
Dec. 13, 1994 |
| 5329150 |
Semiconductor photodetector devices with pairs of monoatomic layers separated by intrinsic layers |
Jul. 12, 1994 |
| 5216260 |
Optically bistable semiconductor device with pairs of monoatomic layers separated by intrinsic layers |
Jun. 1, 1993 |
| 5086329 |
Planar gallium arsenide NPNP microwave switch |
Feb. 4, 1992 |
| 5065200 |
Geometry dependent doping and electronic devices produced thereby |
Nov. 12, 1991 |
| 5060234 |
Injection laser with at least one pair of monoatomic layers of doping atoms |
Oct. 22, 1991 |
| 5031012 |
Devices having asymmetric delta-doping |
Jul. 9, 1991 |
| 4974044 |
Devices having asymmetric delta-doping |
Nov. 27, 1990 |
| 4972246 |
Effective narrow band gap base transistor |
Nov. 20, 1990 |
| 4926226 |
Magnetic field sensors |
May. 15, 1990 |
| 4883770 |
Selective NIPI doping super lattice contacts and other semiconductor device structures formed by shadow masking fabrication |
Nov. 28, 1989 |
| 4882609 |
Semiconductor devices with at least one monoatomic layer of doping atoms |
Nov. 21, 1989 |
| 4719496 |
Repeated velocity overshoot semiconductor device |
Jan. 12, 1988 |
| 4647954 |
Low temperature tunneling transistor |
Mar. 3, 1987 |
| 4590507 |
Variable gap devices |
May. 20, 1986 |
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