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Class Information
Number: 257/E29.073
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by materials of semiconductor body (epo) > Structures with periodic or quasi-periodic potential variation, (e.g., multiple quantum wells, superlattices) (epo) > Doping structures (e.g., doping superlattices, nipi-superlattices) (epo)
Description: This subclass is indented under subclass E29.072. This subclass is substantially the same in scope as ECLA classification H01L29/15C.










Patents under this class:

Patent Number Title Of Patent Date Issued
8421058 Light emitting diode structure having superlattice with reduced electron kinetic energy therein Apr. 16, 2013
8247793 ZnO-based thin film and ZnO-based semiconductor element Aug. 21, 2012
8106378 Semiconductor quantum dot device Jan. 31, 2012
7977666 Quantum dot infrared photodetector apparatus Jul. 12, 2011
7834345 Tunnel field-effect transistors with superlattice channels Nov. 16, 2010
7700936 Fabrication of quantum dots embedded in three-dimensional photonic crystal lattice Apr. 20, 2010
6369438 Semiconductor device and method for manufacturing the same Apr. 9, 2002
5834792 Articles comprising doped semiconductor material Nov. 10, 1998
5670796 Semiconductor device consisting of a semiconductor material having a deep impurity level Sep. 23, 1997
5408107 Semiconductor device apparatus having multiple current-voltage curves and zero-bias memory Apr. 18, 1995
5373186 Bipolar transistor with monoatomic base layer between emitter and collector layers Dec. 13, 1994
5329150 Semiconductor photodetector devices with pairs of monoatomic layers separated by intrinsic layers Jul. 12, 1994
5216260 Optically bistable semiconductor device with pairs of monoatomic layers separated by intrinsic layers Jun. 1, 1993
5086329 Planar gallium arsenide NPNP microwave switch Feb. 4, 1992
5065200 Geometry dependent doping and electronic devices produced thereby Nov. 12, 1991
5060234 Injection laser with at least one pair of monoatomic layers of doping atoms Oct. 22, 1991
5031012 Devices having asymmetric delta-doping Jul. 9, 1991
4974044 Devices having asymmetric delta-doping Nov. 27, 1990
4972246 Effective narrow band gap base transistor Nov. 20, 1990
4926226 Magnetic field sensors May. 15, 1990
4883770 Selective NIPI doping super lattice contacts and other semiconductor device structures formed by shadow masking fabrication Nov. 28, 1989
4882609 Semiconductor devices with at least one monoatomic layer of doping atoms Nov. 21, 1989
4719496 Repeated velocity overshoot semiconductor device Jan. 12, 1988
4647954 Low temperature tunneling transistor Mar. 3, 1987
4590507 Variable gap devices May. 20, 1986











 
 
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