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Class Information
Number: 257/E29.072
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by materials of semiconductor body (epo) > Structures with periodic or quasi-periodic potential variation, (e.g., multiple quantum wells, superlattices) (epo)
Description: This subclass is indented under subclass E29.068. This subclass is substantially the same in scope as ECLA classification H01L29/15.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.075 Compositional structures (epo) 31
257/E29.073 Doping structures (e.g., doping superlattices, nipi-superlattices) (epo) 25
257/E29.074 Structures without potential periodicity in direction perpendicular to major surface of substrate (e.g., lateral superlattice) (epo) 33


Patents under this class:
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Patent Number Title Of Patent Date Issued
8680509 Nitride semiconductor device and method of producing the same Mar. 25, 2014
8633092 Quantum well device Jan. 21, 2014
8629422 Deposition of materials Jan. 14, 2014
8586964 P-type semiconductor device comprising type-2 quantum well and fabrication method thereof Nov. 19, 2013
8541771 Semiconductor device and method of manufacturing the same Sep. 24, 2013
8421058 Light emitting diode structure having superlattice with reduced electron kinetic energy therein Apr. 16, 2013
8405067 Nitride semiconductor element Mar. 26, 2013
8405064 Nitride semiconductor device Mar. 26, 2013
8362461 Quantum well device Jan. 29, 2013
8357922 Nanodevice, transistor comprising the nanodevice, method for manufacturing the nanodevice, and method for manufacturing the transistor Jan. 22, 2013
8304758 Process of constructing oxidation-reduction nanomedicine quantum dots room temperature quantum bit networks Nov. 6, 2012
8294137 Twin-drain spatial wavefunction switched field-effect transistors Oct. 23, 2012
8279904 Semiconductor light-emitting device Oct. 2, 2012
8269209 Isolation for nanowire devices Sep. 18, 2012
8247793 ZnO-based thin film and ZnO-based semiconductor element Aug. 21, 2012
8178863 Lateral collection architecture for SLS detectors May. 15, 2012
8080821 Thyristor radiation detector array and applications thereof Dec. 20, 2011
8053760 Thin film transistor Nov. 8, 2011
7989798 Fabricating arrays of metallic nanostructures Aug. 2, 2011
7989799 Surface light emitting element Aug. 2, 2011
7982230 Substrate for mounting light emitting element, light emitting module and lighting apparatus Jul. 19, 2011
7977666 Quantum dot infrared photodetector apparatus Jul. 12, 2011
7977665 Nitride-based light emitting device Jul. 12, 2011
7968435 Method and device for growing pseudomorphic AlInAsSb on InAs Jun. 28, 2011
7960736 Glass-ceramic-based semiconductor-on-insulator structures and method for making the same Jun. 14, 2011
7829352 Fabrication of nano-object array Nov. 9, 2010
7772588 Light emitting device with improved internal quantum efficiency Aug. 10, 2010
RE41427 Hybrid nanostructured materials based in II-VI semiconductors Jul. 13, 2010
7723719 Light emitting devices with inhomogeneous quantum well active regions May. 25, 2010
7718992 Nitride semiconductor device May. 18, 2010
7700936 Fabrication of quantum dots embedded in three-dimensional photonic crystal lattice Apr. 20, 2010
7692181 Gallium-nitride based light emitting diode light emitting layer structure Apr. 6, 2010
7692183 Polarity inversion of type-II InAs/GaSb superlattice photodiodes Apr. 6, 2010
7679077 Superlattice nano-device and method for making same Mar. 16, 2010
7638791 InAs/GaSb infrared superlattice photodiodes doped with Beryllium Dec. 29, 2009
7633083 Metamorphic buffer on small lattice constant substrates Dec. 15, 2009
7598158 Method and device for growing pseudomorphic AlInAsSb on InAs Oct. 6, 2009
7547910 Semiconductor light-emitting device and method of manufacturing semiconductor light-emitting device Jun. 16, 2009
7535015 Semiconductor device method of manufacturing a quantum well structure and a semiconductor device comprising such a quantum well structure May. 19, 2009
7479651 Semiconductor device Jan. 20, 2009
7456442 Super lattice modification of overlying transistor Nov. 25, 2008
7435987 Forming a type I heterostructure in a group IV semiconductor Oct. 14, 2008
7375368 Superlattice for fabricating nanowires May. 20, 2008
7365357 Strain inducing multi-layer cap Apr. 29, 2008
7276723 Ultra-linear multi-channel field effect transistor Oct. 2, 2007
7262429 Thz detection employing modulation doped quantum well device structures Aug. 28, 2007
7223611 Fabrication of nanowires May. 29, 2007
7223993 Optical semiconductor device May. 29, 2007
7161168 Superlattice nanopatterning of wires and complex patterns Jan. 9, 2007
7112830 Super lattice modification of overlying transistor Sep. 26, 2006

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