Browse by Category:
Active solid-state devices (e.g., transistors, solid-state diodes)
Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo)
Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo)
Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo)
With semiconductor regions connected to electrode not carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo)
> Body region structure of igfet's with channel containing layer (dmosfet or igbt) (epo)
This subclass is indented under subclass E29.043. This subclass is substantially the same in scope as ECLA classification H01L29/10G.